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DESCRIPTION JPS5399958

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DESCRIPTION JPS5399958
Description 1, title of the invention
Waveguide element and method of manufacturing the same
3. Detailed Description of the Invention The present invention relates to a waveguide element for
guiding light and surface acoustic waves and a method of manufacturing the same. In recent
years, it has been considered to efficiently carry out various signal propagations by taking
advantage of the characteristics of light waves such as lade light and the characteristics of
surface acoustic waves. However, conventionally, the optical waveguide device for guiding the
light and the surface acoustic wave waveguide device for guiding the surface acoustic wave are
independent of each other, and are respectively formed on separate substrates. For this reason,
in order to take advantage of the advantages of light and surface acoustic wave, it is necessary to
use the waveguide elements described above in combination with each other. However, there is a
problem that it is difficult to couple the optical waveguide element and the surface acoustic wave
element effectively and satisfactorily. In addition, if it is possible to obtain a good coupling
between the optical waveguide device and the surface acoustic wave waveguide device, it is
possible that the light and the surface acoustic wave instantaneously interact, for example,
interfere with each other. The light of the mode and the surface acoustic wave can not be made
to interact in a traveling wave manner over a long distance as compared with the wavelength of
the surface acoustic wave. Therefore, although it has been found that, for example, the signal can
be successfully transmitted by taking advantage of the advantages of light and surface acoustic
wave, it can not be actually realized. The present invention has been made in consideration of
such circumstances, and the purpose thereof is to effectively couple one optical waveguide
element to a surface acoustic wave waveguide element and to interact the light with the surface
acoustic wave. And a method of manufacturing the same. That is, according to the present
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invention, the tenth liquid phase epitaxial growth layer having piezoelectric characteristics on the
substrate, and the light refractive index larger than the tenth liquid phase epitaxial growth layer
on the tenth liquid phase epitaxial growth layer The optical waveguide and the surface acoustic
wave waveguide are integrally formed on the substrate by forming the twentieth liquid phase
epitaxial growth layer, and the conduction between the light and the surface acoustic wave can
be favorably performed. A waveguide element and a method of manufacturing the same are
provided. Hereinafter, an embodiment of the present invention will be described with reference
to the drawings. EndPage: 2 Fig. 1 is a perspective external view showing the outline of the
element of the present invention, Fig. 2 is a sectional view taken along the line AA 'of Fig. 1, and
Fig. 3 is a sectional view taken along the arrow B-B. 'It is a sectional view. In the figure, reference
numeral 1 denotes a substrate made of LiNbO3 crystal, and its size is, for example, one having a
thickness of 1 mm, a width of 20, and a length of 30 companies. On the upper surface of the
substrate (LiNbO3 crystal plate) 1, for example, a groove 2 having a width of 20 days, a length of
30 μm and a depth of 5 μm is formed by ion etching or the like.
A first liquid phase epitaxial growth J 曽 3 made of LiTaO 2 is formed in the groove 2 by means
described later, and the thickness of the tenth liquid phase epitaxial growth N 3 is 5 μm. The
tenth liquid phase epitaxial growth layer 3 has a piezoelectric function and has a buried structure
with respect to the substrate 1. Further, on the surface constituted by the tenth liquid phase
epitaxial growth layer 3 and the substrate 1, a twentieth liquid phase epitaxial growth layer 4
made of LINbO and crystals is formed by means described later. The m 2 liquid phase epitaxial
growth Fvi 4 has a light refractive index larger than that of the tenth liquid phase epitaxial
growth layer 3. And it has the effect of accelerating the propagation velocity of the surface
acoustic wave propagating in the waveguide constituted by the substrate 1 and the first liquid
phase epitaxial growth layer 3, but the thickness is the wavelength of the surface acoustic wave
And is set so as not to exceed the propagation velocity of the surface acoustic wave by the
substrate 1 alone. The twentieth liquid phase epitaxial growth layer 4 causes the waveguide to
effectively act on surface acoustic waves 0 and the second liquid phase epitaxial growth on the
second liquid phase epitaxial growth layer 4 An optical coupler prism 5m + 5b made of rutile or
the like is provided at both ends of the portion facing the layer 3, respectively. Further, an
electrode for surface acoustic wave excitation (interdigital 11!) Is formed on the portion opposite
to the first liquid phase epitaxial growth N4 on the 20th liquid phase epitaxial growth N4, for
example, by vapor deposition. The pole 6 ht 6 b is disposed to form a surface acoustic wave
transducer. So for surface acoustic wave excitation 'fIt pole 6 &. A surface acoustic wave is
excited through 6b, and a light wave such as a laser beam is introduced through the light
coupling prism 5a 15b. According to the waveguide element configured as described above, for
example, laser light introduced from the optical coupling prism 5m (6b) can cause the inside of
the twentieth liquid phase epitaxial growth layer 4 to be the tenth liquid phase epitaxial growth
layer 4 And guided by the interface with the air while being reflected. In addition, the surface
acoustic wave introduced from the surface acoustic wave excitation electrode 6a (6b) is guided in
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the area of the interface depth of about 40 .mu.m formed by the first (and the second liquid
phase epitaxial growth layers 3 and 4) Be done. That is, the introduced light wave and surface
acoustic wave propagate in a waveguide constituted by the first liquid phase epitaxial growth
layer 3 and the second liquid phase epitaxial growth layer 4 formed on the same substrate 1.
Become.
Further, as described above, this waveguide is set so that the propagation velocity of the surface
acoustic wave becomes different. Therefore, the relationship between the guided lightwave and
the surface acoustic wave becomes dense, and the lightwave and the surface acoustic wave can
be favorably interfered with in the traveling wave. That is, according to the element of the
present invention, good signal propagation utilizing the advantages of the light wave and the
surface acoustic wave can be performed, and for example, it can be effectively provided as an
optical IC. The device of the present invention having various advantages as described above is
manufactured as follows. FIG. 4 is a schematic view showing the main part of the manufacturing
apparatus of the element of the present invention. In FIG. 0, 11 is a box-like platinum stub, which
contains a material for forming a liquid phase epitaxial growth layer in 11. The melt is stored.
Reference numeral 12 denotes a high frequency heating coil wound around the outer peripheral
wall of the core 11. The high temperature heating coil generates heat by energization from a
power supply unit (not shown) and melts the material stored in the crucible 1). On the other
hand, reference numeral 13 denotes a plate-like capillary, and at one side of the capillary 13, a
rectangular cylindrical member J4 having a capillary tube is fixed. Then, one end of the capillary
13 is immersed in the melt stored in the shell 11. Thus, the EndPage: 3 melt "permeates into the
capillary of the capillary 13 due to capillary action. The formation of the liquid phase epitaxial
growth layer by such a manufacturing apparatus is performed as shown in FIG. That is, as shown
in FIG. 5 (a), the molten liquid penetrates into the capillary by immersing the capillary 13 in the
molten liquid. The substrate 15 is positioned on the side of the capillary 13 on which the
capillary tube is provided as shown in FIG. 5 (b) with a gap exhibiting capillary action being
separated, and the lower end of the substrate 14 is immersed in the melt. The immersion of the
substrate 14 in the molten liquid causes the molten liquid to permeate into the gap by capillary
action. Thereafter, the substrate 16 is pulled up from above as shown by the arrow in the
drawing while maintaining the set rbM. At this time, as shown in FIG. 5 (c), the melt is in a state
of being permeated into the gap by the capillary provided in the capillary 13. Thus, the molten
material in the melt is epitaxially grown on the contact surface of the substrate 15. Further, the
time for epitaxial growth is determined by the pulling speed 11, and by controlling the pulling
speed, the thickness of the epitaxial growth layer can be controlled. Hereinafter, a method of
manufacturing an element of the present invention using a manufacturing apparatus for
performing epitaxial growth as described above will be described with reference to FIG.
The platinum rupee Ffll high frequency heating coil 12 is energized and heated, and the platinum
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luster melts the epitaxial melt in 11, for example 50 mol% L12 Co, 10 mol% Ta 205.40 mol%
v205. The above v 205 is a flux having the function of lowering the melting temperature of the
melt by freezing. On the other hand, an example is 1m Asahi, a width 20 to 11. 30 mm long LiNb
0. A groove having a width of 20 u1 and a depth of 5 μm, for example, is formed in the
longitudinal direction of the substrate by ion etching, and the capillary 13 is opposed to the
capillary 13 with a gap of about 50 μm, and the lower end is immersed in the melt. At this time,
as described above, the molten liquid permeates and rises in the gap due to the capillary
phenomenon as described above. Thereafter, by pulling up the substrate at a speed of, for
example, 101 LI / sea 2, an epitaxial layer of a melt is grown on the surface of the substrate
facing the capillary. This epitaxial growth layer is made of LiTaOs, and becomes the first liquid
phase epitaxial growth layer 3 described above. At this time, the flux consisting of the abovementioned {circle over (2)} 205 is deposited on the upper surface of the epitaxial growth layer 3.
This flux is easily dissolved in water and is removed by washing with water. Thus, the first liquid
phase epitaxial growth layer 3 is formed in the groove 2 of the substrate 1. Next, in the platinum
crucible 11, a molten liquid is prepared comprising, for example, 50 mol% of L1 □ co, 10% mol
of Nb2O5, and 40 mol% of ■ 205 melted by high-frequency heating coil 120 current heating.
The substrate 1 on which the first liquid phase epitaxial growth layer 3 is formed is made to face
the capillary 13 with a gap of about 30 μm in this molten liquid, and the lower end portion is
immersed. As a result of this immersion, the melt penetrates into the gap by capillary action and
rises as described above. Thereafter, by pulling up the substrate at a speed of, for example,
9111/1 lee, an epitaxial layer is grown on the substrate. This epitaxial growth layer is made of
LiNbO3 crystal, and becomes the second liquid phase epitaxial growth layer 4 described above.
Then, as in the case of the first liquid phase epitaxial growth layer 3, the flux v 205 deposited on
the surface is washed with water 5 to remove it, thus the first liquid in the groove 2 of the
substrate 1 as shown in FIG. The phase-epitaxial growth layer 3 is formed, and the second liquid
phase epitaxial growth layer 4 is formed to cover the first liquid phase epitaxial growth layer 3
and the substrate 1.
Next, metal electrodes 6m and 6b for surface acoustic wave excitation are deposited, for example,
on the second liquid phase epitaxial growth layer 4 of the substrate 1 on which the first and
second liquid phase epitaxial growth layers 3 and 4 are thus formed. Arrange by means of
Furthermore, the device of the present invention is manufactured by disposing the light coupling
prisms 5 * and 5b made of, for example, rutile etc. on the second liquid phase epitaxial growth
layer 4. EndPage: 4 Thus, according to the method of the present invention, the first and
twentieth liquid phase epitaxial growth layers 3 ° 4 are formed extremely easily, and this
second liquid phase epitaxial growth I%! 74 on electrodes 6a, 6b and prism 5a. 5b can be
arranged. And, the waveguide element according to the present invention manufactured in this
way has the special function and effect as described above, and it is possible to transmit the light
wave and the surface acoustic wave in the same waveguide. It has the advantage of being able to
interact with the wave combination in a traveling wave manner. The element of the present
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invention and the method of manufacturing the same are not limited to the above-described
embodiments, and various changes can be made without departing from the scope of the present
invention. For example, even if the first liquid phase epitaxial growth layer is not formed as a
groove formed in advance on a portion of the substrate to be formed, it may be formed, for
example, in a protruding state on a limited portion on one side surface of the substrate. Good.
Then, the second liquid phase epitaxial growth layer may be formed only on the formed first
liquid phase epitaxial growth layer. Further, the positions of the interdigital electrodes 6m and 6b
and the prisms 5h and 5b disposed on the second liquid phase epitaxial growth layer may be any
positions facing the first liquid phase epitaxial growth layer, and the positions and arrangements
thereof The number may be set according to the specification. Also, the materials such as the
substrate and the eleventh and second liquid phase epitaxial growth layer may be those
according to the application etc., and the thicknesses of the first and second liquid phase
epitaxial growth layers are also the substrate thickness. It may be set appropriately by
controlling the speed. As described above in detail, according to the present invention, it is
possible to guide the light wave and the surface acoustic wave in the same waveguide, and to
effectively cause the interaction such that the multiplexing can be interfered in a traveling wave
manner. The waveguide element and the method of manufacturing the same can be provided
with great advantages such as the following.
4. A simple explanatory drawing of the drawings shows one embodiment of the present
invention, FIG. 1 is a perspective external view of the element, FIG. 2 is an arrow A + A / cross
sectional view of FIG. 1, and FIG. 1 is a schematic cross-sectional view taken along the line B--B
'in FIG. 1, FIG. 4 is a schematic view of an apparatus for producing the element of the present
invention, FIG. It is a flow chart of @ manufacturing process. DESCRIPTION OF SYMBOLS 1 ...
board | substrate, 2 ... groove | channel, 3 ... 1st liquid phase epitaxial growth layer, 4 ... 20th
liquid phase epitaxial growth layer, 6a, 5b ... prism, 61kH6b ... ta very. Applicant Agent Attorney
Takeshi Suzue 2 Figure EndPage: 524 Figure (a) (b) (c) EndPage: 6
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