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DESCRIPTION JP2007040704

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DESCRIPTION JP2007040704
PROBLEM TO BE SOLVED: To provide a semiconductor device having a microstructure capable of
compensating for variations in a manufacturing stage using test results with a tester, a method of
manufacturing the same, a program of the method of manufacturing the same and a
semiconductor manufacturing apparatus. SOLUTION: In a tester 1, a test sound wave is input to
detect an output voltage of a device in response to the input of the test sound wave. The bonder
60 receives the test results of the tester 1 and performs device classification. Then, bonding is
performed to adjust the amplification factor of the amplifier corresponding to the classified
group. [Selected figure] Figure 1
Semiconductor device, method of manufacturing semiconductor device, program of
manufacturing method of semiconductor device, and semiconductor manufacturing apparatus
[0001]
The present invention relates to a semiconductor device having a microstructure, for example,
MEMS (Micro Electro Mechanical Systems), a method of manufacturing the same, a program of
the method of manufacturing the same, and a semiconductor manufacturing apparatus.
[0002]
In recent years, attention has been focused on MEMS, which is a device in which various
functions such as mechanical, electronic, optical, chemical, and the like are integrated, in
particular, using semiconductor fine processing technology and the like.
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As MEMS technologies that have been put into practice, MEMS devices have been mounted on
microsensors such as acceleration sensors, pressure sensors, air flow sensors, etc., as various
sensors for automobiles and medical care, for example. In addition, by adopting this MEMS
technology for an ink jet printer head, it is possible to increase the number of nozzles that eject
ink and eject ink accurately, and it is possible to improve the image quality and speed up the
printing speed. Furthermore, a micro mirror array or the like used in a reflective projector is also
known as a general MEMS device.
[0003]
In addition, various sensors and actuators that use MEMS technology will be developed in the
future, and will be applied to applications to optical communication and mobile devices,
applications to peripheral devices of computers, and applications to bioanalysis and portable
power supplies. It is expected to do. Technical research report No. 3 (Industrial Machinery
Division, Industrial Technology and Environment Bureau, Ministry of Economy, Trade and
Industry, Industrial Machinery Division, Manufacturing Industry Bureau, published on March 28,
2003) contains various MEMS technologies on the agenda of the current status and issues of
technology related to MEMS. It is introduced.
[0004]
On the other hand, with the development of MEMS devices, it is also important to have a method
of properly inspecting the structure because of the fine structure and the like. In the past,
evaluation of its characteristics has been carried out using means such as rotating the device
after packaging or using vibration etc. However, appropriate inspections are carried out at the
initial stage of the wafer condition etc. after the microfabrication technology. By detecting a
defect, it is possible to improve the yield and further reduce the manufacturing cost. JP-A-534371 proposes an inspection method for detecting the resistance value of an acceleration
sensor which changes by blowing air to an acceleration sensor formed on a wafer to determine
the characteristics of the acceleration sensor. ing.
[0005]
Also, prior to packaging, compensation for device variations occurring at the manufacturing
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stage is also performed. For example, in Japanese Patent Application Laid-Open No. 10-70268,
there is disclosed a method of adjusting an offset voltage which is a sensor output generated due
to a variation of a device generated at a manufacturing stage for a semiconductor pressure
sensor.
[0006]
This makes it possible to compensate for variations in each device that occur in the
manufacturing stage. Japanese Patent Application Laid-Open No. 5-34371 Japanese Patent
Application Laid-Open No. 10-70286 Technical Research Report No. 3 (Development Bureau of
Industry and Industry Bureau, Industrial Research Institute, Industrial Technology and
Environment Bureau, METI)
[0007]
However, device variations that occur at the manufacturing stage appear not only in the offset
voltage but also, for example, in the sensor sensitivity. Therefore, it is necessary to adjust also the
amplification factor which amplifies the output voltage of a sensor by the variation of the device
which arises at a manufacturing stage.
[0008]
In particular, it is effective if device variations occurring in the manufacturing stage can be
determined based on the test results of the wafer test executed by the tester before packaging
and be usefully used in the subsequent steps.
[0009]
The present invention has been made to solve the above-described problems, and a
semiconductor device having a microstructure capable of compensating for variations in
manufacturing steps using test results with a tester, and its manufacture. It is an object of the
present invention to provide a method, its manufacturing method program and a semiconductor
manufacturing apparatus.
[0010]
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A semiconductor device according to the present invention includes: a microstructure having a
movable portion formed on a semiconductor substrate; and an amplification portion amplifying
and outputting an electrical detection signal detected based on the movement of the movable
portion of the microstructure. And
The amplification unit has adjustment means for adjusting the characteristic value of the
amplification unit for amplifying and outputting an electrical detection signal, and the test sound
wave is output to the microstructure formed on the semiconductor substrate. A wafer test is
performed, and an electrical detection signal is detected by the movement of the movable part in
response to the test sound wave during the wafer test, and the detection result is based on the
detection information and the correction information corresponding to the detection result
stored in advance. The characteristic value of the amplification unit is adjusted by the adjustment
means before inspection after packaging.
[0011]
Preferably, based on the electrical detection signal detected by the movement of the movable
part in response to the test sound wave at the time of wafer test, correspondence among the
plurality of groups corresponding to the variation of the microstructure included in the test
result information It is classified into one group.
The adjustment means sets an adjustment value belonging to one corresponding group among a
plurality of adjustment values provided corresponding to each of the plurality of groups.
[0012]
Preferably, the adjustment means adjusts at least one of the amplification factor and the offset
voltage value of the amplification unit.
[0013]
Preferably, the amplification unit further includes a plurality of amplifiers, and at least one
adjustment value of the plurality of amplifiers is adjusted to an adjustment value corresponding
to one group classified by the adjustment means.
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[0014]
In particular, the adjusting means has a plurality of pads provided on the semiconductor
substrate, and a plurality of resistive elements each provided between the plurality of pads and
electrically coupled to the plurality of pads.
Two pads of the plurality of pads are selected to adjust the characteristic value of the
amplification unit based on the resistance value of the resistive element provided between the
two pads.
[0015]
In particular, the adjustment means includes a storage unit for storing adjustment data for
determining the characteristic value of the amplification unit.
Adjustment data for determining the characteristic value of the amplification unit is determined
based on the electrical detection signal detected by the movement of the movable unit in
response to the test sound wave and the correction information corresponding to the detection
result stored in advance, and stored Stored in the department.
[0016]
The adjusting means re-adjusts the characteristic value of the amplification unit based on the
result of the post-package inspection. Preferably, the semiconductor device corresponds to any
one of a semiconductor acceleration sensor, a semiconductor pressure sensor, and a
semiconductor angular velocity sensor.
[0017]
A method of manufacturing a semiconductor device according to the present invention, which
comprises: a microstructure having a movable portion formed on a substrate; and an
amplification portion for amplifying a detection signal detected based on the movement of the
movable portion of the microstructure. A method of manufacturing a semiconductor device,
comprising: performing a wafer test in which a test sound wave is output to a microstructure
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formed on a semiconductor substrate before packaging; and responding to the test sound wave
by executing the wafer test The characteristic value of the amplification unit is adjusted before
inspection after packaging based on the step of detecting the electrical detection signal by the
movement of the movable portion, the detection result of the detection signal and the correction
information corresponding to the detection result stored in advance. And the step of
[0018]
Preferably, the method further includes the step of re-adjusting the characteristic value of the
amplification unit based on the result of the post-package inspection.
[0019]
A method of manufacturing a semiconductor device according to the present invention causes a
computer to execute the method of manufacturing a semiconductor device described above.
[0020]
A semiconductor manufacturing apparatus according to the present invention amplifies and
outputs an electrical detection signal detected based on the movement of a microstructure
having a movable portion formed on a semiconductor substrate and the movable portion of the
microstructure. A semiconductor manufacturing apparatus for manufacturing a semiconductor
device including an adjustment unit, wherein the amplification unit is an adjustment unit for
adjusting a characteristic value of the amplification unit for amplifying and outputting an
electrical detection signal; A wafer test in which a test sound wave is output is executed on the
microstructure formed on the substrate, and an electrical detection signal is detected by the
movement of the movable part in response to the test sound wave at the wafer test, and the
detection result is Based on the correction information corresponding to the detection result
stored in advance, the adjustment unit is controlled so as to adjust the characteristic value of the
amplification unit before inspection after packaging.
[0021]
Preferably, the adjustment means includes a plurality of pads provided on the semiconductor
substrate, and a plurality of resistive elements each provided between the plurality of pads and
electrically coupled to the plurality of pads.
Two pads of the plurality of pads are selected to adjust the characteristic value of the
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amplification unit based on the resistance value of the resistive element provided between the
two pads by wire bonding.
[0022]
Preferably, the adjustment means includes a storage unit for storing adjustment data for
determining the characteristic value of the amplification unit, and an electrical detection signal
detected by the movement of the movable unit in response to the test sound wave and stored
beforehand. Based on the correction information corresponding to the detection result,
adjustment data for determining the characteristic value of the amplification unit is determined,
and it is instructed to store in the storage unit of the adjustment means.
[0023]
A semiconductor device according to the present invention, a method of manufacturing the same,
a program of manufacturing the same, and a semiconductor manufacturing apparatus store an
electric detection signal by detecting movement of a movable portion in response to a test sound
wave during wafer test. The characteristic value is adjusted before the post-package inspection
by the adjustment means for adjusting the characteristic value of the amplification unit based on
the correction information corresponding to the detected result.
[0024]
As a result, in the pre-shipment inspection process after packaging, rough adjustment can be
performed in advance so that the output is not saturated at the time of the inspection, so that the
inspection time and correction time at the time of the pre-shipment inspection become short.
[0025]
Hereinafter, embodiments of the present invention will be described in detail with reference to
the drawings.
In the drawings, the same or corresponding parts are designated by the same reference numerals
and their description will not be repeated.
[0026]
First Embodiment FIG. 1 is a diagram for describing a part of processing steps of a
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semiconductor device according to a first embodiment of the present invention.
[0027]
Here, a flow in which the semiconductor silicon wafer 10 (hereinafter, also simply referred to as
a wafer) is processed is shown.
[0028]
Referring to FIG. 1, it is assumed that a plurality of chips (not shown) having microstructures are
formed on wafer 10.
Then, the wafer is transferred to the tester 1 and a wafer test is performed.
Then, the wafer is transferred to the dicing unit 50 and the dicing process is performed.
Specifically, a plurality of chips formed on a wafer are cut for each chip by a dicing saw.
Then, it is conveyed to the bonder 60.
In the bonder 60, a bonding step of connecting the lead electrode on the substrate side to the
bonding pad formed on the chip is performed for each chip.
[0029]
Then, although not shown, a chip sealing or sealing process (also referred to as a packaging
process) is performed in a later process.
Although described later, test information which is a wafer test result in the tester 1 is
transmitted to the bonder 60.
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[0030]
FIG. 2 is a flowchart for explaining the flow of the process of FIG.
As shown in FIG. 2, the wafer test process is performed by the above-described tester 1 (step
SP0). Next, the dicing step (step SP1) is performed by dicing 50. Then, a bonding process such as
wire bonding is performed by the bonder 60 (step SP2). Then, after the bonding is performed, a
packaging process is performed (step SP3). Then, after the packaging process, a pre-shipment
inspection process for testing a finished product before shipment is executed (step SP4).
[0031]
In this example, based on the test result of the wafer test in the tester 1, a method of correcting
the device variation at the manufacturing stage will be described. Specifically, a method of
adjusting the output voltage of the device will be described with reference to correction
information corresponding to the test result detected from the test result detected at the wafer
test.
[0032]
First, tester 1 according to the first embodiment of the present invention will be described. FIG. 3
is a schematic configuration view for explaining the tester 1 of the microstructure according to
the first embodiment of the present invention.
[0033]
Referring to FIG. 3, here, a tester (inspection apparatus) 1 according to the first embodiment of
the present invention and a plurality of sensor chips TP (hereinafter, also simply referred to as
chips) having a minute structure having minute movable portions are formed. And a substrate
(wafer) 10 is shown.
[0034]
In this example, a multi-axis 3-axis acceleration sensor will be described as an example of the
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microstructure to be tested.
[0035]
The tester 1 includes a speaker 2 for outputting sound waves which are compression waves, an
input / output interface 15 for executing exchange of input / output data between the outside
and the inside of the tester, and a control unit 20 for controlling the entire tester 1. A probe
needle 4 used for contact with the test object, a measurement unit 25 for detecting a
measurement value to be a characteristic evaluation of the test object via the probe needle 4, and
a command from the control unit 20 A speaker control unit 30 for controlling the speaker 2, a
microphone (microphone) 3 for detecting an external sound, and a sound wave detected by the
microphone 3 to be converted into a voltage signal, amplified and output to the control unit 20. A
signal adjustment unit 35 and a storage unit 40 that stores various programs and information
that is characteristic evaluation of the test object are provided.
The microphone 3 can be disposed in the vicinity of the test object.
[0036]
Before describing testing of a tester according to the first embodiment of the present invention,
first, a three-axis acceleration sensor of a microstructure, which is a test object, will be described.
In addition, only the sensor part which outputs the detection voltage of a sensor is demonstrated
here, and the amplification part which amplifies the detection voltage detected from the later
sensor is mentioned later.
[0037]
FIG. 4 is a view from the top of the device of the three-axis acceleration sensor. As shown in FIG.
4, a plurality of electrode pads PD are arranged around the chip TP formed on the substrate 10.
A metal wiring is provided to transmit an electrical signal to the electrode pad or from the
electrode pad. And in the central part, four double pyramids AR which form a clover type are
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arranged.
[0038]
FIG. 5 is a schematic view of a three-axis acceleration sensor. Referring to FIG. 5, this 3-axis
acceleration sensor is a piezoresistive type, and a piezoresistive element as a detecting element is
provided as a diffusion resistor. This piezoresistive acceleration sensor can use an inexpensive IC
process, and is advantageous in downsizing and cost reduction because the sensitivity does not
decrease even if the resistance element which is a detection element is formed small.
[0039]
Specifically, the central double pyramid AR is supported by four beams BM. The beams BM are
formed to be orthogonal to each other in the X and Y axial directions, and each of the beams BM
includes four piezoresistive elements. The four piezoresistive elements for detection in the Z-axis
direction are disposed laterally to the piezoresistive elements for detection in the X-axis direction.
The top shape of the pyramid AR forms a clover shape, and is connected to the beam BM at the
center. By adopting this crowbar type structure, it is possible to increase the double cone AR and
at the same time increase the beam length, and it is possible to realize a highly sensitive
acceleration sensor even with a small size.
[0040]
The operating principle of this piezoresistive three-axis acceleration sensor is that the beam BM
is deformed when the double cone is subjected to acceleration (inertial force), and the
acceleration is determined by the change in resistance value of the piezoresistive element formed
on the surface. It is a mechanism to detect. The sensor output is set to be taken out from the
output of a Wheatstone bridge, which will be described later, which is incorporated
independently for each of the three axes.
[0041]
FIG. 6 is a conceptual diagram for explaining deformation of a double cone and a beam when
receiving acceleration in each axial direction.
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[0042]
As shown in FIG. 6, a piezoresistive element has a property (piezoresistive effect) in which its
resistance value changes with applied strain, and in the case of tensile strain, the resistance value
increases, and in the case of compressive strain, Resistance decreases.
In this example, X-axis direction detecting piezoresistive elements Rx1 to Rx4, Y-axis direction
detecting piezoresistive elements Ry1 to Ry4, and Z-axis direction detecting piezoresistive
elements Rz1 to Rz4 are shown as an example.
[0043]
FIG. 7 is a circuit diagram of a Wheatstone bridge provided for each axis. FIG. 7A is a circuit
diagram of the Wheatstone bridge in the X (Y) axis. The output voltages of the X and Y axes are
Vxout and Vyout, respectively.
[0044]
FIG. 7B is a circuit diagram of the Wheatstone bridge in the Z axis. The output voltage of the Z
axis is Vzout.
[0045]
Due to the strain applied as described above, the resistance value of the four piezoresistive
elements on each axis changes, and based on this change, each piezoresistive element is, for
example, an output of a circuit formed by a Wheatstone bridge in the X-axis and Y-axis. The
acceleration component of each axis is detected as an independently separated output voltage. In
addition, the above-mentioned metal wiring etc. which are shown by FIG. 4 are connected so that
said circuit may be comprised, and it is comprised so that the output voltage with respect to each
axis | shaft from the predetermined | prescribed electrode pad may be detected.
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[0046]
Further, since the three-axis acceleration sensor can also detect a DC component of acceleration,
it can also be used as a tilt angle sensor for detecting gravitational acceleration.
[0047]
FIG. 8 is a diagram for explaining the output response to the tilt angle of the three-axis
acceleration sensor.
As shown in FIG. 8, the sensor is rotated about the X, Y, Z axes, and the bridge output of each of
the X, Y, Z axes is measured with a digital voltmeter. A low voltage power supply +5 V is used as
a power supply of the sensor. In each measurement point shown in FIG. 8, a value obtained by
arithmetically subtracting the zero point offset of each axis output is plotted.
[0048]
FIG. 9 is a diagram for explaining the relationship between gravitational acceleration (input) and
sensor output. The input-output relationship shown in FIG. 9 is calculated from the cosine of the
inclination angle in FIG. 8 to calculate the gravitational acceleration components respectively
associated with the X, Y, and Z axes to obtain the relationship between the gravitational
acceleration (input) and the sensor output. The linearity of the input and output is evaluated.
That is, the relationship between acceleration and output voltage is approximately linear.
[0049]
FIG. 10 is a diagram for explaining frequency characteristics of the three-axis acceleration sensor.
As shown in FIG. 10, the frequency characteristics of the sensor output of each of X, Y, and Z
axes show flat frequency characteristics up to around 200 Hz for all three axes as an example,
and 602 Hz for X axis and 600 Hz for Y axis In the Z axis, resonance occurs at 883 Hz.
[0050]
Referring back to FIG. 3, in the tester according to the first embodiment of the present invention,
the micro structure based on the sound wave is output by outputting the sound wave which is a
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compression wave to the microstructure 3 axis acceleration sensor This is a method of detecting
the movement of the movable part of and evaluating its characteristics.
[0051]
The inspection method of the microstructure according to the first embodiment of the present
invention will be described using the flowchart of FIG.
[0052]
Referring to FIG. 11, first, inspection (test) of the microstructure is started (started) (step S0).
Next, the probe needle 4 is brought into contact with the electrode pad PD of the detection chip
TP (step S1).
Specifically, in order to detect the output voltage of the Wheatstone bridge circuit described in
FIG. 5, the probe needle 4 is brought into contact with a predetermined electrode pad PD. In
addition, in the structure of FIG. 1, although the structure using one set of probe needle | hook 4
is shown, it is also possible to set it as the structure using several sets of probe needles. Output
signals can be detected in parallel by using a plurality of sets of probe needles.
[0053]
Next, a test sound wave to be output from the speaker 2 is set (step S2a). Specifically, control
unit 20 receives an input of input data from the outside through input / output interface 15.
Then, the control unit 20 controls the speaker control unit 30 and instructs the speaker control
unit 30 to output a test sound wave of a desired frequency and a desired sound pressure from
the speaker 2 based on the input data. Next, a test sound wave is output from the speaker 2 to
the detection chip TP (step S2b).
[0054]
Next, the test sound wave given from the speaker 2 to the detection chip TP is detected using the
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microphone 3 (step S3). The test sound wave detected by the microphone 3 is converted and
amplified into a voltage signal in the signal adjustment unit 35 and output to the control unit 20.
[0055]
Next, the control unit 20 analyzes and determines the voltage signal input from the signal
adjustment unit 35, and determines whether a desired test sound wave has arrived (step S4).
[0056]
In step S4, when the control unit 20 determines that the test sound wave is a desired one, the
process proceeds to the next step S5, and the characteristic value of the detection chip is
measured.
Specifically, the characteristic value is measured by the measuring unit 25 based on the electrical
signal transmitted through the probe needle 4 (step S5).
[0057]
Specifically, the arrival of the test sound wave which is a compressional wave output from the
speaker 2, that is, the air vibration causes the movable part of the microstructure of the detection
chip to move. It is possible to measure the output voltage which is an electrical detection signal
via the probe needle 4 about the change of the resistance value of the 3-axis acceleration sensor
which is a minute structure which changes based on this movement.
[0058]
On the other hand, if it is determined in step S4 that the test sound wave is not the desired one,
the process returns to step S2 again to reset the test sound wave. At this time, the control unit 20
instructs the speaker control unit 30 to correct the test sound wave. In response to an instruction
from the control unit 20, the speaker control unit 30 finely controls the frequency and / or the
sound pressure so as to be a desired test sound wave and controls the speaker 2 to output the
desired test sound wave. In this example, a method of detecting a test sound wave and correcting
it to a desired test sound wave is described. However, especially when the desired test sound
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wave reaches the microstructure of the detection chip, the test is particularly performed. It is also
possible to adopt a configuration that does not provide a correction means for sound waves and
a method for correcting test sound waves. Specifically, the processes to the steps S2a to S4 are
executed in advance before the start of the test, and the speaker control unit 30 stores a
corrected control value for outputting a desired test sound wave. Then, at the time of the test of
the actual microstructure, the speaker control unit 30 omits the processing of steps S3 and S4 at
the time of the above-mentioned test by controlling the input to the speaker 2 by this recorded
control value. Is also possible.
[0059]
Next, the control unit 20 determines whether the measured characteristic value, that is, the
measurement data is within the allowable range (step S6). If it is determined in step S6 that it is
within the allowable range, it is determined that the result is pass (step S7), and data output and
storage are executed (step S8). Then, the process proceeds to step S9. In the first embodiment of
the present invention, the control unit 20 detects the frequency response characteristic of the 3axis acceleration sensor by the input of the test sound wave output from the speaker 2 as the
determination of the allowable range, and the chip is appropriate. Determine if it has the
property. The data storage is assumed to be stored in the storage unit 40 provided inside the
tester 1 based on an instruction from the control unit 20. The storage unit 40 also stores test
information for evaluating or determining the characteristics of the device based on the
measurement data for the chips included in the allowable range, as well as the information on the
allowable range. The test information also includes, for example, correction information
corresponding to measurement data for adjusting a characteristic value of an amplification unit,
which is a circuit at a later stage, which will be described later.
[0060]
If there is no chip to be inspected next in step S9, the inspection (test) of the microstructure is
ended (step S10).
[0061]
On the other hand, if there is a further chip to be inspected in step S9, the process returns to the
first step S1 to execute the inspection described above again.
[0062]
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Here, when it is determined in step S6 that the measured characteristic value, that is, the
measurement data is not within the allowable range, the control unit 20 determines that the
process is rejected (step S11) and retests (step S12).
Specifically, chips that are determined to be out of tolerance by re-examination can be removed.
Alternatively, even chips determined to be out of the allowable range can be divided into a
plurality of groups. That is, even if the chip can not be cleared to the severe test conditions, it is
conceivable that there are many chips that have no problem in actual shipping by performing
repair / correction. Therefore, it is also possible to sort the chips by performing the grouping by
re-inspection or the like and to ship the chips based on the sorting result.
[0063]
In this embodiment, as an example, the configuration has been described in which a change in
the resistance value of the piezoresistive element provided in the three-axis acceleration sensor is
detected and determined in response to the movement of the three-axis acceleration sensor. In
particular, it is not limited to resistance elements, and changes in voltage, current, frequency,
phase difference, delay time, position, etc. based on changes in impedance values or changes in
impedance values of capacitive elements, reactance elements, etc. are detected and determined.
Is also possible.
[0064]
FIG. 12 is a diagram for explaining the frequency response of the three-axis acceleration sensor
that responds to the test sound wave output from the speaker 2.
[0065]
In FIG. 12, a test sound wave of 1 Pa (pascal) is given as a sound pressure, and when the
frequency is changed, an output voltage output from the three-axis acceleration sensor is shown.
The vertical axis represents the output voltage amplitude (mV) of the 3-axis acceleration sensor,
and the horizontal axis represents the frequency (Hz) of the test sound wave.
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[0066]
Here, the output voltage obtained particularly in the X-axis direction is shown.
In this example, only the X axis is illustrated, but it is also possible to obtain similar frequency
characteristics also in the Y axis and the Z axis, so that the characteristics of the acceleration
sensor can be evaluated in each of the three axes. .
[0067]
Next, when the wafer test according to the test sound wave according to the first embodiment of
the present invention described above is performed, the characteristics of the device are
evaluated or determined based on the measurement data for the chip determined to be within the
tolerance range. The method will be described.
[0068]
Here, as an example, determination of variation in sensor sensitivity of a device will be described.
FIG. 13 is a diagram for explaining the determination of the variation in sensor sensitivity of the
device based on the test result of the tester 1 according to the first embodiment of the present
invention.
[0069]
Here, in the case where the reference value of the detection voltage detected according to the
test sound wave of the tester 1 is S0 (ideal detection voltage value), a method of classifying
according to the detection voltage r detected from the actual device is shown. ing. Specifically, it
is divided into groups of 0.1S0 in the range of 0.5S0 to 1.5S0. For example, in the case of r
<0.5S0, group 1 is set. Further, in the case of 0.5S0 ≦ r <0.6S0, the group 2 is set. According to
the same method, in the case of 1.4S0 ≦ r <1.5S0, the group 11 is set. Then, in the case of r ≧
1.5S0, the group 12 is set. These pieces of information are stored in the storage unit 40 of the
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tester 1 and read under the instruction of the control unit 20 to execute classification
determination.
[0070]
And based on this classification judgment, the characteristic value of the amplification part
mentioned later, specifically, an amplification factor is adjusted.
[0071]
Here, each group corresponds to approximately ± 10% of the amplification value A0 (= 10S0)
based on the amplification factor 10 times (× 10) of the group 6 in the case of 0.9S0 ≦ r
<1.0S0. Adjustment so that the detected voltage is amplified.
[0072]
For example, in the case of group 2, the amplification factor is set to 18 times (× 18).
Further, in the case of group 3, the amplification factor is set to 15 times (× 15).
Further, in the case of the group 11, the amplification factor is set to seven times (× 7). As
described above, by adjusting the amplification factor of the amplifier in accordance with the
variation of the detection voltage detected from the device, it is possible to correct the sensor
sensitivity in each device.
[0073]
In the case of group 1 or group 12, the detected voltage is too small or too large, that is, the
sensor sensitivity is too low or too high, so that it is not suitable for the sensor, that is, it is
rejected as out of tolerance.
[0074]
Then, in the present example, the test result in the tester 1 is output to the bonder 60 as test
result information.
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Specifically, for example, adjustment data regarding the amplification factor of adjusting the
sensor sensitivity is output as correction information for adjusting the characteristic value of the
amplification unit.
[0075]
FIG. 14 is a diagram for explaining an amplification unit of the acceleration sensor according to
the first embodiment of the present invention. Referring to FIG. 14, the sensor unit SN and the
amplification unit for amplifying the output result of the sensor unit SN according to the first
embodiment of the present invention shown in the circuit configuration of the Wheatstone
bridge described in FIG. ing.
[0076]
As for the sensor unit SN, as described in FIG. 7, a Wheatstone bridge is formed for each axis (X,
Y, Z), and an output voltage is detected from the sensor unit SN according to the movement of
the movable unit. For example, here, a case is shown where the output voltage detected for one
axis is amplified.
[0077]
The amplification unit is configured of a plurality of amplifiers in a multistage configuration
connected in series. Specifically, in this example, two-stage amplifiers 100 and 300 are shown.
The amplification unit further includes an offset voltage adjustment unit 200 that adjusts an
offset voltage with respect to the amplifier 100. In the present example, the case of adjusting the
amplification factor of the amplifier 100 will be described as an example. Here, the amplifier 100
is a so-called instrumentation amplifier.
[0078]
Amplifier 100 includes comparators 110 to 112, resistance elements 101 to 106, and a
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resistance adjustment unit 120. The comparators 110 and 111 constitute a non-inversion
amplification stage, and the comparator 112 constitutes a difference image amplification stage.
[0079]
Comparator 110 compares the input voltages transmitted to nodes N0 and N1 and transmits the
result to node N2. Resistive element 103 is electrically coupled between node N2 and node N1.
Resistance adjustment unit 120 is electrically coupled between nodes N1 and N5. Resistive
element 104 is electrically coupled between node N5 and node N7. Comparator 111 compares
the input voltages transmitted to nodes N5 and N6, and transmits the result to node N7. Resistive
element 101 is electrically coupled between nodes N2 and N3. Resistive element 105 is
electrically coupled between nodes N7 and N8. The comparator 112 compares the input voltages
transmitted to the nodes N3 and N8 and transmits the result to the node N4. Resistive element
102 is electrically coupled between nodes N3 and N4. Resistive element 106 is electrically
coupled between nodes N8 and N9.
[0080]
The resistance adjustment unit 120 can adjust the resistance value, and the gains (amplification
factors) of the comparators 110 and 111 are adjusted based on the adjustment of the resistance
value. Specifically, as the resistance value is increased from the reference resistance value as a
reference, the load applied to the nodes N1 and N5 is increased, so that the gain (amplification
factor) decreases, and conversely, the resistance from the reference resistance value as a
reference As the value is lowered, the load applied to the nodes N1 and N5 is lowered, so that the
gain (amplification factor) is increased.
[0081]
The offset voltage adjustment unit 200 includes a comparator 210 and a voltage adjustment unit
220. Comparator 210 compares the input voltages transmitted to nodes N10 and N11, and
transmits the result to node N9. The comparator 210 is a so-called voltage follower in which the
output node N9 and the input node 10 are electrically coupled, and the same voltage is
transmitted to the node N9 following the voltage transmitted to the node N11.
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[0082]
The voltage adjustment unit 220 is divided by a resistance element provided between the power
supply voltage Vdd and the ground voltage GND, which will be described later, and adjustment of
the voltage associated with the resistance division is made according to the connection position
of the resistance element connected to the node N11. Is possible.
[0083]
Adjustment of the offset voltage is adjusted by adjusting the connection position of the resistive
element in the voltage adjustment unit 220.
[0084]
The amplifier 300 receives the amplification output signal of the amplifier 100 and the
predetermined reference voltage signal Vref, and further amplifies and outputs the amplification
output signal with the amplification factor set.
Here, although described briefly, the amplifier 300 has the same configuration as that of the
amplifier 100, and the amplification factor can be adjusted by adjusting the resistance value of
the resistance adjustment unit.
Although the offset voltage adjustment unit 200 that adjusts the offset voltage is provided for the
first stage amplifier 100, it may be provided for the second stage amplifier 300.
[0085]
In general, in the case of the multistage amplifier, each amplifier in each stage can be adjusted
independently, and the adjustment of the amplifier 100 in the front stage is described here, but
the invention is not limited thereto. It is also possible to adjust the amplification factor of 300.
[0086]
FIG. 15 is a diagram for explaining the adjustment of the amplification factor according to the
first embodiment of the present invention.
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In the first embodiment of the present invention, a case will be described where bonder 60
described above receives test result information of tester 1 as an example, and executes wire
bonding based thereon. In this example, a method of compensating for variations in sensor
sensitivity at the manufacturing stage based on correction data included in test inspection results
according to a test sound wave according to the first embodiment of the present invention will be
described.
[0087]
Referring to FIG. 15, here, a sensor chip TP and two amplification chips AMTP and AMTP #
constituting an amplification unit are mounted on a semiconductor substrate 1000. Then, in the
bonder 60, the wiring connection between the chips is performed. Here, the connection between
the sensor chip TP and the amplification chip AMTP will be mainly described.
[0088]
In the chip TP according to the first embodiment of the present invention, a plurality of
resistance elements are provided in the pad area around the sensor unit SN. Each of the plurality
of resistive elements is electrically coupled between the plurality of pads.
[0089]
In this example, in the chip TP, a plurality of resistance elements constituting the resistance
adjustment unit 120 and a plurality of resistance elements constituting the voltage adjustment
unit 220 are respectively provided. Resistance adjustment unit 120 includes resistance elements
Ra0 to RaN-1, and the respective resistance elements are respectively provided between pads
PDa0 to PDaN. The voltage adjustment unit 220 includes a plurality of resistive elements Rb0 to
RbM-1, and the respective resistive elements are respectively provided between the pads PDb0 to
PDbM.
[0090]
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Then, two pads PDa electrically coupled respectively to node N1 and node N5 by wire bonding
are selected from the plurality of pads. Thereby, the resistance value between node N1 and node
5 is adjusted. For example, in this example, node N1 and pad PDa0 are electrically coupled.
Further, node N5 and pad PDa2 are electrically coupled. As a result, the resistors Ra0 and Ra1
are connected in series between the node N1 and the node N5.
[0091]
Therefore, the number of resistive elements connected between node N1 and node N5 is adjusted
by selecting two pads PDa from the plurality of pads PDa and electrically coupling them by such
wire bonding. It is possible to adjust the resistance value of the resistive element in between.
Thus, as described above, it is possible to adjust the amplification factor by adjusting the
resistance value from, for example, the reference resistance value serving as a reference, and to
adjust the value of the amplified output signal.
[0092]
Bonder 60 receives the above-described test result information in wire bonding, and determines
the connection relationship to obtain the amplification factor of the corresponding group
according to the grouping in tester 1 in order to adjust the amplification factor of amplifier 100.
And select a pad to be bonded from the plurality of pads PDa. Although not shown, in bonder 60,
a storage unit for storing an adjustment program and various control programs for adjusting a
bonding position in order to adjust an amplification factor upon receiving an input of test result
information from tester 1 It shall be possessed. This makes it possible to perform adjustment at a
much lower cost than a method of recording and correcting a correction value in a ROM or a
method of changing and changing the resistance value of a resistor by laser trimming.
[0093]
Further, by adopting this method, since adjustment is performed before packaging, it is possible
to set so that the output is not saturated at the time of the inspection in the pre-shipment
inspection process after packaging, so that the inspection at the time of pre-shipment inspection
Time and correction time become short.
[0094]
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Further, as described above, the plurality of resistance elements Rb0 to RbM-1 configuring the
voltage adjustment unit 220 are also configured on the chip TP, and provided between the pads
PDb0 to PDbM.
Here, pad PDb0 is electrically coupled to power supply voltage Vdd. Pad PDbM is electrically
coupled to ground voltage GND. Therefore, a plurality of resistive elements are connected in
series between the power supply voltage Vdd and the ground voltage GND, and the resistance
division makes it possible to adjust the voltage value output from each pad PDb. Therefore, a
desired voltage value according to resistance division is supplied to the input node of comparator
210 by changing the position of pad PDb connected to node N11. As described above, since
comparator 210 is a voltage follower, a desired voltage value according to this resistance division
is transmitted to node N 9 and output to amplifier 100 as an offset voltage value. Thereby, it is
possible to adjust the offset voltage value included in the characteristic value of the amplifier
100 by a simple method. In this example, when the power supply voltage Vdd is 5 V, for
example, 2.5 V is set as an offset voltage value (hereinafter also referred to as an offset reference
value) as a reference.
[0095]
FIG. 16 is a diagram for describing classification of offset voltage correction values according to
the first embodiment of the present invention.
[0096]
Here, the offset voltage correction value is subdivided into groups 1 to 42, and the offset voltage
correction value (adjustment value) of the amplifier is determined based on them.
Here, the case where it is classified into 1 mV every within the range of -20 mV to 20 mV based
on the offset reference value is shown. Then, as the offset voltage correction value, a value
obtained by adding the offset voltage correction value as the correction value to the detection
voltage detected for offset is within the range of approximately -0.5mV to 0.5mV with respect to
the offset reference value. It has been decided to fit. This substantially cancels the offset and
enables amplification in a highly accurate amplifier.
[0097]
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For example, for the detection voltage q, the case of q <−20 mV is considered as group 1. Then,
the case of −20 mV ≦ q <−19 mV is referred to as group 2. According to the same scheme, the
case of 19 mV ≦ q <20 mV is defined as group 41. Further, the case of q ≧ 20 mV is defined as
a group 42. Then, the offset voltage is determined according to the grouping. For example, when
corresponding to group 2, the offset voltage correction value is +19.5 mV. Further, in the case of
group 3, the offset voltage correction value is set to + 18.5V. In the case of the group 1 or the
group 42, the offset voltage correction value is too large in positive and negative, and therefore,
it is determined to be defective. These pieces of information are stored in the storage unit 40 of
the tester 1 and read under the instruction of the control unit 20 to execute classification
determination.
[0098]
In the first embodiment of the present invention, the tester 1 calculates the detection voltage q,
determines the offset voltage correction value determined based on the above classification
result, and outputs the test result information to the bonder 60. Bonder 60 receives the offset
voltage correction value, and electrically connects predetermined pad PDb and node N11 in
voltage adjustment unit 220 so as to obtain a desired offset voltage by wire bonding. The
detection voltage q corresponds to a value obtained by subtracting the offset reference value
from the output reference value output from the chip TP.
[0099]
Here, the output reference value of the chip TP will be described. FIG. 17 is a diagram for
explaining an output result from the chip TP.
[0100]
In the tester 1 described above, when a test sound wave is input to the device, an output voltage
is detected through the probe needle.
[0101]
The waveform shown in FIG. 17 is a waveform diagram of the detected output voltage by plotting
the output voltage measured in a predetermined sampling period in a certain measurement
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interval.
[0102]
As shown here, the output result from the chip TP is a voltage signal waveform having an
amplitude centered on the output reference value as a reference.
Therefore, it is possible to easily measure the reference output reference value by obtaining the
average value in a certain measurement section.
[0103]
In the above-described inspection of the sensor sensitivity, as an example, the maximum output
voltage in a measurement section is used as a detection voltage.
[0104]
Therefore, according to the test method according to the first embodiment of the present
invention, it is not necessary to separately perform the characteristic inspection for the sensor
sensitivity and the offset voltage, and amplification is easily and quickly the characteristic value
of the amplifier from measurement data according to one test. It is possible to adjust in parallel
for the rate and the offset voltage.
[0105]
In addition, a program to be executed by a computer according to the classification method of at
least one of the sensor sensitivity and the offset voltage correction value according to the first
embodiment of the present invention described above is stored in advance in a storage medium
such as FD, CD-ROM or hard disk. It is also possible to save.
[0106]
In this case, the tester 1 is provided with a driver for reading the program stored in the recording
medium, and the control unit 20 in the tester 1 receives the program via the driver and
determines the above-described allowable range. It is also possible to carry out.
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Furthermore, when connected via a network, it is also possible to download the program from
the server.
[0107]
Second Embodiment In the above-described first embodiment, the method of adjusting the
characteristics of the sensor by wire bonding in bonder 60 based on the test result information in
tester 1 has been mainly described. In mode 2, a method of adjusting the characteristics of the
sensor according to still another method will be described.
[0108]
FIG. 18 is a diagram for explaining the amplification unit of the acceleration sensor and the
adjustment of the amplification factor thereof according to the second embodiment of the
present invention.
[0109]
Referring to FIG. 18, the amplification unit of the acceleration sensor according to the second
embodiment of the present invention is formed of a so-called programmable amplifier (PGA).
[0110]
Specifically, sensor chip TP # formed of sensor unit SN described above and amplification chip
APTP formed of programmable amplifier 400 and storage unit 450 are mounted on
semiconductor substrate 1001, and between chips Wiring connections are performed.
In the present example, as an example, storage unit 450 is configured as an EEPROM that is a
flash memory capable of storing non-volatile data. However, the present invention is not limited
to this, and other memories may be used. It is.
[0111]
The program amplifier 400 can adjust the characteristics of the amplifier based on the data
stored in the storage unit 450.
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[0112]
In Embodiment 2 of the present invention, a method of adjusting the characteristics of the sensor
will be described.
In the second embodiment of the present invention, a wafer test is performed in tester 1 in
accordance with the same method as described in the first embodiment.
Then, the test result information of the tester 1 is output to the ROM data writing device 45.
[0113]
The ROM data writing device 45 writes data for determining the characteristics of the amplifier
in the storage unit 450 via the ROM interface (I / F) not shown based on the test result
information from the tester 1.
[0114]
Thereby, for example, the amplification factor adjustment data for adjusting the amplification
factor included in the characteristics of the amplifier is written in the storage unit 450 to adjust
the amplification factor of the program amplifier 400 and adjust the value of the output signal
after amplification. it can.
Along with this, since adjustment is performed before packaging, in the pre-shipment inspection
process after packaging, it is possible to set so that the output is not saturated at the time of the
inspection, so the inspection time and correction time at the time of pre-shipment inspection are
short. Become.
[0115]
Although the amplification factor adjustment data for adjusting the amplification factor is written
to the storage unit 450 using the ROM data writing device 45 as the characteristic of the
amplifier here, the present invention is not limited to the amplification factor adjustment data.
For example, the offset correction value is calculated according to the method described in the
first embodiment, and the offset adjustment data is written in storage unit 450 by giving it to
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ROM data writing device 45 as test result information, and the offset voltage included in the
amplifier characteristics It is also possible to adjust the
[0116]
Here, since the amplifying unit according to the second embodiment of the present invention is a
programmable amplifier, there is no need to perform adjustment of the amplification factor
according to the wire bonding of the bonder in the first embodiment, so that the amplification
unit can be easily carried out after the package process. Adjustment is possible, and in the
following, the case of performing readjustment in the pre-shipment inspection process after
packaging will be described.
[0117]
FIG. 19 is a diagram for explaining the flow of the process of adjusting the characteristics of the
amplification unit according to the second embodiment of the present invention.
[0118]
Referring to FIG. 19, here, a scheme is shown in which adjustment is made using tester test result
information before and after packaging.
[0119]
Before packaging, here, a configuration similar to that described in FIG. 18 is shown.
As shown here, test result information in the tester 1 is input to the ROM data writing device 45,
and the ROM data writing device 45 writes the coarse adjustment data in the storage unit 450.
For example, here, the amplification factor is roughly adjusted so that the detection output does
not saturate.
[0120]
After packaging, here, a case where inspection is performed by the finished product test device 2
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in the pre-shipment inspection step is shown.
Then, it is assumed that the finished product test device 2 also has a storage unit similar to the
tester 1 for executing the classification determination described in FIG. 13 although not shown.
The finished product test device 2 executes a final test on the pre-shipment device after
packaging. For example, in the case of an acceleration sensor, a desired characteristic is obtained
by applying vibration using a vibrator or the like. Perform various tests such as whether it is
detected.
[0121]
Further, the finished product test device 2 executes classification judgment similar to that of FIG.
13 on the variation of the sensor sensitivity of the device based on the detected voltage, as
described in the first embodiment, and determines the amplification factor. Then, test result
information is output to ROM data writing device 45 #.
ROM data writing device 45 # writes the final adjustment data in storage unit 450 based on the
test result information.
That is, ROM data writing device 45 # re-adjusts the amplification factor of the packaged device
based on the test result information.
[0122]
Therefore, according to the method, for example, using the test result information of the wafer
test, the characteristics of the amplification unit are roughly adjusted first, and then readjustment
is performed based on the inspection result of the pre-shipment inspection step performed later.
By adjusting so as to become the rate, it becomes possible to shorten the inspection time and the
correction time.
[0123]
Modification of Second Embodiment FIG. 20 is a diagram for explaining the flow of the process of
adjusting the characteristics of the amplification unit according to a modification of the second
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embodiment of the present invention.
[0124]
Referring to FIG. 20, the difference in the processing flow of adjustment of the amplification unit
described in FIG. 19 is that data writing is executed by the same ROM data writing device 45
before and after packaging.
[0125]
With this device, there is no need to separately provide a ROM data writing device, and the
system is simplified.
Further, in particular, it is possible to separately provide the finished product test device 2 and
the ROM data writing device as shown in FIG. 19, but as shown in this example, the finished
product test device 2 # It is also possible to incorporate the ROM data writing device 45 and
provide it as one device.
This improves the installation efficiency and also improves the controllability.
[0126]
In the above embodiment, the chip CP formed for the acceleration sensor has been described, but
the present invention is not limited to the acceleration sensor, and can be applied to a MEMS
device having another movable portion.
[0127]
FIG. 21 is a view for explaining a microphone as an example of the capacitance detection type
sensor element.
[0128]
Referring to FIG. 21A, microphone 70 includes substrate 80, oxide film 81 formed on substrate
80, and diaphragm 71 formed on oxide film 81 (extension extending from the diaphragm to the
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outside) And a fixed portion 74 provided on the diaphragm 71 and made of an insulating
material, and a back electrode 72 provided on the fixed portion 74.
A space 73 is formed between the diaphragm 71 and the back electrode 72 by the fixing portion
74.
The back electrode 72 is provided with a plurality of through holes as acoustic holes 75.
Further, an extraction electrode 77 for the back electrode is provided on the surface of the back
electrode 72, and an extraction electrode 78 for the diaphragm is provided on the surface of the
extension portion 76 of the diaphragm 71.
[0129]
Next, referring also to FIG. 21B, the diaphragm 71 is provided substantially at the center of the
substrate 80 and has a rectangular shape.
Here, in order to simplify the explanation, it will be described as a square.
In the approximate center of the four sides constituting the diaphragm 71, four rectangular
fixing portions 74a to 74d are provided adjacent to the sides, and a back electrode 72 is provided
on the fixing portion 74. The back electrode 72 has an octagonal shape including four sides on
the diaphragm side of the fixed portion 74 and four sides (straight lines) connecting adjacent
fixed portions 74 (for example, adjacent vertices which are the shortest distance between 74a
and 74b). doing.
[0130]
The back electrode 72 is supported by the fixing portions 74 provided on the outer peripheral
portions of the four sides of the rectangular diaphragm 71, and has a shape connecting the
shortest distance between adjacent apexes of the fixing portion 74. 72 mechanical strength can
be secured.
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[0131]
In FIG. 21 (b), a space is provided between the diaphragm 71 and the fixed portion 74 for easy
understanding, but in practice there is almost no space.
[0132]
Further, in FIG. 21B, a back electrode extraction electrode 77 is provided on each fixed portion
74, and four diaphragm extraction electrodes 78 are provided at the four corners of the surface
of the extension portion 76 of the diaphragm 71. This is in consideration of the yield, and if there
are one each, there is no particular problem.
[0133]
The diaphragm 71 vibrates in response to a pressure change (including sound and the like) from
the outside.
That is, the microphone 70 causes the diaphragm 71 and the back electrode 72 to function as a
capacitor, and electrically takes out a change in capacitance of the capacitor when the diaphragm
71 vibrates by the sound pressure signal. It can be used.
[0134]
Then, it is possible to amplify and output the detected electrical output by the amplifier as
described above.
[0135]
FIG. 22 is a conceptual view of a piezoresistive pressure sensor.
Referring to FIG. 22A, in the piezoresistive pressure sensor 90, a diaphragm 91 is formed
anisotropically on a silicon substrate, and diffusion piezoresistive elements 92a to 92d are
disposed at the center of the end thereof. doing.
For pressure detection, a stress acts on the diffusion type piezoresistive elements 92a to 92d
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formed on the diaphragm surface by pressure, and a piezoresistive effect is used in which the
electric resistance changes.
[0136]
Referring to FIG. 22B, it is a cross-sectional view of the piezoresistive pressure sensor 90 cut at
ID-ID #.
As shown here, diffusion piezoresistive elements 92a and 92c are disposed on the surface of the
diaphragm 91.
[0137]
FIG. 22C is a wiring diagram when the diffusion type piezoresistive elements 92a to 92d are
bridge-connected.
[0138]
Here, assuming that the resistance values of the diffusion type piezoresistive elements 92a to
92d are R1 to R4, respectively, the resistance values R1 to R4 after pressure application are
expressed by the following equations.
[0139]
[0140]
Where R 0 is the no-load resistance value, and α 1 and α 2 are the products of the
piezoresistance coefficient and stress.
Then, the ratio of the input / output voltage of the bridge is expressed by the following equation.
[0141]
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[0142]
Therefore, the pressure can be detected by amplifying the detected electrical output by the
amplifier as described above and measuring the input / output voltage.
[0143]
In the present embodiment, the microphone or the piezoresistive pressure sensor has been
described as an example. However, the present invention is not limited to this. For example, the
present invention can be applied to other MEMS devices such as an angular velocity sensor.
[0144]
It should be understood that the embodiments disclosed herein are illustrative and nonrestrictive in every respect.
The scope of the present invention is indicated not by the above description but by the claims,
and is intended to include all the modifications within the meaning and scope equivalent to the
claims.
[0145]
FIG. 6 is a diagram for describing a part of the processing of the semiconductor device according
to the embodiment of the present invention.
It is a flowchart explaining the flow of a process of FIG.
It is a schematic block diagram explaining the tester 1 of the microstructure according to the
embodiment of the present invention.
It is the figure seen from the device top of a three-axis acceleration sensor.
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It is the schematic of a 3-axis acceleration sensor. It is a conceptual diagram explaining
deformation | transformation of a double cone and a beam at the time of receiving the
acceleration of each axial direction. It is a circuit block diagram of the Wheatstone bridge
provided with respect to each axis | shaft. It is a figure explaining the output response to the
inclination angle of a 3-axis acceleration sensor. It is a figure explaining the relationship between
gravity acceleration (input) and a sensor output. It is a figure explaining the frequency
characteristic of a 3-axis acceleration sensor. It is a flowchart figure explaining the inspection
system of the microstructure according to the embodiment of the present invention. FIG. 7 is a
diagram for explaining the frequency response of the three-axis acceleration sensor that
responds to the test sound wave output from the speaker 2. It is a figure explaining
determination of the dispersion | variation in the sensor sensitivity of a device based on the test
result of the tester 1 according to embodiment of this invention. It is a figure explaining the
amplifier part of the acceleration sensor according to embodiment of this invention. It is a figure
explaining adjustment of the amplification factor according to embodiment of this invention. It is
a figure explaining classification of offset voltage according to an embodiment of the present
invention. It is a figure explaining the output result from chip TP. It is a figure explaining
amplification part of an acceleration sensor and adjustment of its amplification factor according
to Embodiment 2 of the present invention. It is a figure explaining the flow of processing of
adjustment of the characteristic of an amplification part according to Embodiment 2 of the
present invention. FIG. 17 is a diagram for explaining the flow of adjustment processing of the
characteristics of the amplification unit according to the modification of the second embodiment
of the present invention. It is a figure explaining a microphone as an example of a capacity
detection type sensor element. It is a conceptual diagram of a piezo resistance type pressure
sensor.
Explanation of sign
[0146]
Reference Signs List 1 tester, 2 speakers, 5, 5 # finished product test device, 10 wafers, 45, 45 #
ROM data writing device, 50 dicing, 60 bonders, 70 microphones, 90 piezoresistive pressure
sensors, 100, 300 amplifiers, 110 to 110 112, 210 comparator, 120 resistance adjustment unit,
200 offset voltage adjustment unit, 220 voltage adjustment unit, 400 PGA, 450 storage unit,
1000, 1001 semiconductor substrate.
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