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DESCRIPTION JP2009071862

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DESCRIPTION JP2009071862
To provide a condenser microphone with high plate strength. A support unit, a plate supported
by the support unit and having a through hole group consisting of a plurality of through holes
and a fixed electrode, and a movable electrode facing the fixed electrode And a vibrating
diaphragm. The plate has a plurality of flat portions having different heights in the film thickness
direction, and a step portion forming a step between the adjacent flat portions, and the plurality
of through holes are the flat portions. Through in the film thickness direction of the plate.
[Selected figure] Figure 1
コンデンサマイクロホン
[0001]
The present invention relates to a condenser microphone.
[0002]
Conventionally, a condenser microphone that can be manufactured by applying a manufacturing
process of a semiconductor device is known.
A condenser microphone has a diaphragm that vibrates by sound waves, and a plate that faces a
diaphragm with a dielectric such as air interposed therebetween. Patent Document 1 discloses a
condenser microphone having a bent portion at the periphery of a diaphragm. The bent portion
of the diaphragm forms a step in the film thickness direction. Patent Document 2 discloses a
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condenser microphone having a through hole at the periphery of the diaphragm.
[0003]
Here, when the plate is formed on the diaphragm by deposition such as chemical vapor
deposition (CVD), if the bent portion or the through hole as described above is formed in the
diaphragm, the step of the bent portion or the outer edge of the through hole The shape of is
transferred to the plate. Thus, in many cases, the plate is formed with steps. On the other hand,
through holes are formed in the plate for transmitting sound waves. However, if a through hole is
formed in the step of the plate described above, stress due to an external force applied to the
plate in the manufacturing process or electrostatic attraction between the plate and the
diaphragm generated at the time of energization is concentrated in the vicinity of the through
hole formed in the step. By doing so, the plate may be broken.
[0004]
U.S. Patent Application Publication No. 2005/0241944 U.S. Patent No. 4776019
[0005]
The present invention was made to solve the above-mentioned problems, and it is an object of
the present invention to provide a condenser microphone with high plate strength.
[0006]
(1) A condenser microphone for achieving the above object includes a support portion, a plate
supported by the support portion and having a through hole group consisting of a plurality of
through holes and a fixed electrode, and the fixed electrode And a diaphragm having opposing
movable electrodes and vibrating by sound waves.
The plate has a plurality of flat portions having different heights in the film thickness direction,
and a step portion forming a step between the adjacent flat portions, and the plurality of through
holes are the flat portions. Through in the film thickness direction of the plate.
The through hole of the plate is formed in a flat portion. That is, the through holes of the plate
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are not formed across the steps of the step. As described above, since the through holes are not
formed in the step portion where the stress of the plate is concentrated, the strength thereof is
higher than that in which the through holes are formed across the steps. The term "strength" as
used herein refers to the resistance to destruction of the structure, where high strength means
less likely to be destroyed by external force, and low strength means more likely to be destroyed
by external force.
[0007]
(2) The plurality of through holes may be uniformly formed in the plate. The holes in the plate
function as passages for the passage of sound waves. Therefore, the output characteristics of the
condenser microphone can be enhanced by uniformly arranging the plurality of through holes on
the plate. In general, in the manufacturing process of a condenser microphone, the sacrificial
layer formed between the diaphragm and the plate is removed by wet etching to form an air gap
between the diaphragm and the plate. At this time, the through holes of the plate function as a
passage for passing the etching solution. Therefore, by uniformly arranging the plurality of
through holes on the plate, the manufacturing process of the condenser microphone can be
simplified and the yield can be improved. Here, “uniform” means that a plurality of target
objects are substantially equally spaced in different directions.
[0008]
(3) The through hole group is constituted by a plurality of rows of through holes arranged along
the step of the step portion, and the step of the step portion is formed between adjacent rows of
the through holes. It may be done. By arranging the plurality of through holes constituting the
through hole group as described above, the plurality of through holes can be uniformly arranged
on the plate while avoiding the steps of the plate.
[0009]
(4) The opening area of the through hole formed in the vicinity of the step may be smaller than
the opening area of the through hole separated from the step. By making the opening area of the
through hole in the vicinity of the step smaller than the opening area of the through hole
separated from the step, the freedom of arrangement of the through hole in the vicinity of the
step is enhanced. Therefore, the plurality of through holes can be easily arranged on the plate
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without straddling the steps.
[0010]
In the present specification, "formed on ..." means "formed directly on ..." and "... on an
intermediate" unless there is a technical hindrance. It is meant to include both of “form
through”.
[0011]
Hereinafter, a plurality of embodiments of the present invention will be described based on the
drawings.
The components to which the same reference numerals are assigned in each embodiment
correspond to the components of the other embodiments to which the reference numbers are
attached. First Embodiment A condenser microphone 1 according to a first embodiment shown in
FIG. 1 is a so-called silicon microphone manufactured using a semiconductor manufacturing
process, and converts sound arriving from the plate 30 side into an electric signal.
[0012]
1. Configuration of sound sensing unit The sound sensing unit of the condenser microphone 1
has a laminated structure including the substrate 10, the first film, the second film, the third film,
and the fourth film. The substrate 10 is, for example, a single crystal silicon substrate. The
substrate 10 is formed with a cavity 11 for relieving the pressure that the diaphragm 20 receives
from the side opposite to the direction of travel of the sound wave to be detected.
[0013]
The first film is an insulating thin film made of silicon dioxide or the like. The first support 12
composed of a first film supports the second film on the substrate 10 such that an air gap is
formed between the diaphragm 20 and the substrate 10. A circular opening 13 is formed in the
first film. The second film is, for example, a conductive thin film made of polysilicon doped with P
(phosphorus) as an impurity. The portion of the second film not fixed from the first film
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constitutes the diaphragm 20. The diaphragm 20 does not adhere to either the first film or the
third film, and functions as a movable electrode that vibrates by sound waves. The diaphragm 20
is circular covering the cavity 11. A bent portion 22 bent in the film thickness direction is formed
at the periphery of the diaphragm 20. The bent portion 22 of the diaphragm 20 is formed on the
entire periphery of the central portion. The third film is, for example, an insulating thin film made
of silicon dioxide as the first film. The second support portion 14 composed of a third film
insulates the conductive second film and the fourth film, and supports the fourth film on the
second film. A circular opening 15 is formed in the third film.
[0014]
Similar to the second film, the fourth film is a conductive thin film made of, for example,
polysilicon doped with P as an impurity. The portion of the fourth film not fixed to the third film
constitutes the plate 30. The plate 30 has a step 32 and a flat 33. The step of the step portion 32
is a transfer shape of the step of the bent portion 22 and is a circle extending along the step of
the bent portion 22. The flat portions 33 are formed on both sides of the step portion 32. The
plate 30 also has a through hole group 34. The through hole group 34 is composed of a large
number of through holes 36 arranged concentrically. The through holes 36 arranged on the
same circle are formed at equal intervals in the circumferential direction (see P1 shown in FIG.
1). The distance between adjacent rows of the through holes 36 (see P2 shown in FIG. 1) is set
equal to a value at which the through holes 36 are not disposed in the step 32. That is, the large
number of through holes 36 are uniformly formed in the flat portion 33 of the plate 30, avoiding
the steps 32. Here, to form the through holes 36 in the plate 30 by avoiding the step portion 32
means that a plurality of through holes are formed in the plate 30 so that each through hole 36
does not open in the flat portion 33 on both sides across the step of the step portion 32. It means
that the holes 36 are formed.
[0015]
2. Configuration of Detection Unit An example of a detection unit of the condenser
microphone 1 will be described based on a circuit diagram shown in FIG. The diaphragm 20 is
connected to a bias power supply. Specifically, the lead 104 and the lead 106 connected to the
terminal 102 of the bias power supply are connected to the second thin film and the substrate
10, respectively. As a result, the diaphragm 20 and the substrate 10 have substantially the same
potential. Also, the plate 30 is connected to the input terminal of the operational amplifier 100.
Specifically, the lead 108 connected to the input terminal of the operational amplifier 100 is
connected to the fourth film. The input impedance of the op amp 100 is high.
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[0016]
3. When the acoustic wave of the condenser microphone passes through the through hole 36
of the plate 30 and propagates to the diaphragm 20, the diaphragm 20 vibrates by the acoustic
wave. When the diaphragm 20 vibrates, the vibration changes the distance between the plate 30
and the diaphragm 20, and the capacitance formed by the diaphragm 20 and the plate 30
changes.
[0017]
Here, the plate 30 is connected to the operational amplifier 100 having a high input impedance
as described above. Therefore, even if the capacitance formed by the diaphragm 20 and the plate
30 changes, the amount of movement of the charge present in the plate 30 to the operational
amplifier 100 is very small. Therefore, the charge present on the plate 30 and the diaphragm 20
can be regarded as unchanged. Thereby, the change of the electrostatic capacitance formed by
the diaphragm 20 and the plate 30 can be taken out as the potential change of the plate 30. In
this manner, the condenser microphone 1 outputs, as an electrical signal, a very slight change in
the capacitance formed by the diaphragm 20 and the plate 30. That is, the condenser
microphone 1 converts a change in sound pressure applied to the diaphragm 20 into a change in
electrostatic capacitance, and converts a change in electrostatic capacitance into a change in
voltage to convert an electrical signal correlated with the change in sound pressure. Output.
[0018]
4. Method of Manufacturing Condenser Microphone First, as shown in FIG. 2 (A1), a first film
51 is deposited on a wafer 50 to be the substrate 10 (see FIG. 1). Then, the first film 51 is etched
to form an annular recess 51 a in the first film 51. Specifically, for example, it is as follows. A first
film 51 is formed by depositing silicon dioxide on a single crystal silicon wafer 50 by plasma
CVD (Chemical Vapor Deposition). Next, a photoresist film is coated on the entire surface of the
first film 51, and then a resist pattern is formed by photolithography that performs exposure and
development using a predetermined resist mask, and an anisotropy such as RIE (Reactive Ion
Etching) is generated. An annular recess 51 a is formed in the first film 51 by selectively
removing the first film 51 by reactive etching.
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[0019]
Next, as shown in FIG. 2 (A2), the second film 52 is deposited on the first film 51. Specifically, the
second film 52 is formed by depositing P-added polysilicon on the first film 51 using a low
pressure CVD method. In the second film 52, a bent portion 22 corresponding to the concave
portion 51a of the first film 51 is formed. Next, as shown in FIG. 2 (A3), a third film 53 is
deposited on the second film 52. Specifically, the third film 53 is formed by depositing silicon
dioxide on the second film 52 by plasma CVD. In the third film 53, a recess 53a corresponding to
the bent portion 22 of the second film 52 is formed.
[0020]
Next, as shown in FIG. 3 (A4), a fourth film 54 is deposited on the third film 53. A fourth
membrane 54 having through holes 34 is formed. Specifically, the fourth film 54 is formed by
depositing P-added polysilicon on the third film 53 using a low pressure CVD method. As a result,
the stepped portion 32 corresponding to the concave portion 53 a of the third film 53 is formed
in a portion of the fourth film 54 on the bent portion 22. Then, plate-like flat portions are formed
on both sides of the step portion 32 of the fourth film 54.
[0021]
Next, the fourth film 54 is etched to form a large number of through holes 36 in the flat portion
of the fourth film 54. Specifically, after a photoresist film is applied to the entire surface of the
fourth film 54, a resist pattern is formed by photolithography in which exposure and
development using a predetermined resist mask are performed, and anisotropic etching such as
RIE is performed. The fourth membrane 54 is selectively removed.
[0022]
Next, as shown in FIG. 3 (A5), the cavity 11 is formed in the wafer 50. Specifically, for example, it
is as follows. After a photoresist film is applied to the entire back surface of wafer 50, a resist
pattern is formed by photolithography which performs exposure and development using a
predetermined resist mask, and wafer 50 is selectively etched by anisotropic etching such as
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Deep-RIE. To form a cavity 11 in the wafer 50.
[0023]
Next, as shown in FIG. 3 (A6), the first film 51 and the third film 53 are selectively removed to
form the opening 13 and the opening 15, and the third film 53 to the second film 52 are formed.
Exposed. Specifically, for example, it is as follows. A photoresist film is applied to the entire
surfaces of the third film 53 and the fourth film 54. Then, a resist pattern having an opening for
exposing the through hole group 34 is formed by photolithography which performs exposure
and development using a resist mask. Next, a first film which is a silicon oxide film by isotropic
wet etching using an etchant such as buffered hydrofluoric acid (Buffered HF), or a combination
of isotropic etching and anisotropic etching, for example. 51 and the third film 53 are selectively
removed. At this time, the etching solution infiltrates from the through holes 36 of the fourth film
54 and the cavity 11 of the substrate 10 to dissolve the first film 51 and the third film 53. The
openings 13 and 15 are formed in the first film 51 and the third film 53, respectively, by
designing the through holes 34 and the cavity 11 appropriately. As a result, the diaphragm 20 of
the sound sensing unit, the plate 30, the first support 12, and the second support 14 are formed
(see FIG. 1). The condenser microphone 1 is completed through subsequent steps such as dicing
and packaging.
[0024]
Second to Seventh Embodiments The sound sensing units of the condenser microphones of the
second to seventh embodiments have the same layered structure as that of the condenser
microphone 1 of the first embodiment. Therefore, in the following description of the second to
seventh embodiments, the description of the components common to the first embodiment will
be omitted. Second Embodiment Configuration of sound sensing unit As shown in FIG. 4, the
condenser microphone 2 of the second embodiment differs from the condenser microphone 1 of
the first embodiment in the diaphragm 220 and the plate 230. In the periphery of the diaphragm
220 of the condenser microphone 2, a slit 222 is formed to surround the center.
[0025]
The plate 230 has a step 232 and a flat portion 233. The step of the step 232 is a transfer shape
of the edge of the slit 222 and extends along the edge of the slit 222. The flat portion 233 is
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formed on both sides of the step portion 232. The plate 230 also has a through hole group 234.
The through hole group 234 is configured by a large number of through holes 36 arranged
concentrically in the same manner as the through hole group 34 of the first embodiment.
However, the distance between the through holes 36 arranged on the same circle (see P1 shown
in FIG. 4) is set so that the through holes 36 are not located in the radially extending portion 232
a of the step portion 232. That is, the large number of through holes 36 are uniformly formed in
the flat portion 233 of the plate 230, avoiding the step portion 232. The configuration of the
detection unit of the condenser microphone 2 of the second embodiment is substantially the
same as that of the condenser microphone 1 of the first embodiment, and thus the description
thereof is omitted.
[0026]
2. Method of Manufacturing Condenser Microphone First, as shown in FIG. 5A, a first film 51
and a second film 52 are deposited on a wafer 50. Then, the second film 52 is etched to form the
slits 222 in the second film 52. Next, as shown in FIG. 5 (A2), a third film 53 is deposited on the
first film 51 and the second film 52. In the third film 53, a recess 253a corresponding to the slit
222 of the second film 52 is formed.
[0027]
Next, as shown in FIG. 5 (A3), a fourth film 54 is deposited on the third film 53. As a result, the
stepped portion 232 corresponding to the recess 253 a of the third film 53 is formed in a
portion of the fourth film 54 on the slit 222. Then, plate-like flat portions are formed on both
sides of the stepped portion 232 of the fourth film 54. Next, the fourth film 54 is etched to form
a large number of through holes 36 in the flat portion of the fourth film 54. The subsequent
steps are substantially the same as the manufacturing method of the first embodiment.
[0028]
Third Embodiment Configuration of sound sensing unit As shown in FIG. 6, the condenser
microphone 3 of the third embodiment differs from the condenser microphone 1 of the first
embodiment in the diaphragm 320, the plate 330, the cavity 311 and the like. The diaphragm
320 and the plate 330 intersect each other on the cavity 311. Specifically, the diaphragm 320 is
configured of, for example, a second film of a square. The plate 330 is formed of a rectangular
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fourth film whose longitudinal direction is orthogonal to the longitudinal direction of the second
film. The plate 330 has a step 332 and a flat portion 333. The step of the step portion 332 is a
transfer shape of the end 320 a of the diaphragm 320, and extends from one end of the plate
330 in the lateral direction to the other end along the end 320 a. The flat portion 333 is formed
on both sides of the step portion 332. The guard electrode 300 is configured of a second film
disposed on both sides of the diaphragm 320 in the short direction. The guard electrode 300 is
formed between the substrate 10 and the fourth film in order to reduce parasitic capacitance of
the condenser microphone 3.
[0029]
The through hole group 334 is constituted by a plurality of rows of through holes 36 arranged at
equal intervals (see P31 shown in FIG. 6) along a straight line along the step of the step portion
332. The distance between adjacent rows of the through holes 36 (P32 shown in FIG. 6) is set to
a value at which the through holes 36 are not disposed in the step portion 332. That is, the large
number of through holes 36 are uniformly formed in the flat portion 333 of the plate 330,
avoiding the step portion 332. The pad 301 is formed of a second film and connected to the
diaphragm 320. The pad 302 is formed of a second film and connected to the guard electrode
300. The pad 303 is formed of a fourth film and connected to the plate 330.
[0030]
2. As shown in the circuit diagram of FIG. 6B, the guard electrode 300 is connected to the
output terminal of the operational amplifier 100, as shown in the circuit diagram of FIG. 6B.
Specifically, the lead 110 connected to the output terminal of the operational amplifier 100 is
connected to the guard electrode 300. The amplification degree of the operational amplifier 100
is set to one. Except for this point, the configuration of the detection unit of the condenser
microphone 3 is substantially the same as that of the condenser microphone 1 of the first
embodiment. As described above, since the amplification degree of the operational amplifier 100
is set to 1, the guard electrode 300 and the plate 330 have substantially the same potential.
Therefore, guard electrode 300 and plate 330 form substantially no parasitic capacitance. On the
other hand, since the capacitance formed by the guard electrode 300 and the substrate 10 is
between the operational amplifier 100 and the bias power supply, the sensitivity of the
condenser microphone 3 is hardly affected. As a result, the parasitic capacitance of the
condenser microphone 3 is reduced.
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[0031]
3. Method of Manufacturing Condenser Microphone First, as shown in FIG. 7, a first film 51
and a second film 52 are deposited on a wafer 50. The first film 51 and the second film 52 are
formed by plasma CVD or low pressure CVD similarly to the condenser microphone 1 of the first
embodiment. Then, the second film 52 is etched to form a square second film 52 constituting the
diaphragm 320, the guard electrode 300, the pad 301, and the pad 302 (see FIG. 6).
[0032]
Next, as shown in FIG. 8, a third film 53 is deposited on the first film 51 and the second film 52.
For example, the third film 53 is formed by plasma CVD or the like in the same manner as the
condenser microphone 1 of the first embodiment. In the third film 53, a step 353 corresponding
to the end 352a of the second film 52 is formed. Next, a fourth film 54 is deposited on the third
film 53. As a result, a step 332 corresponding to the step 353 of the third film 53 is formed on
the end 352 a of the third film 53 of the fourth film 54. Then, plate-like flat portions are formed
on both sides of the step portion 332 of the fourth film 54. Next, the fourth film 54 is etched to
form a large number of through holes 36 in the flat portion of the fourth film 54.
[0033]
Next, as shown in FIG. 9, a square cavity 311 corresponding to the intersection of the diaphragm
320 and the plate 330 is formed in the wafer 50. Then, the first film 51 and the third film 53 are
selectively removed using the resist pattern 55 that exposes the vicinity of the intersection of the
diaphragm 320 and the plate 330 in the same manner as the manufacturing method of the first
embodiment. The subsequent steps are substantially the same as the manufacturing method of
the first embodiment.
[0034]
Fourth Embodiment Configuration of sound sensing unit As shown in FIG. 10, the condenser
microphone 4 of the fourth embodiment differs from the condenser microphone 1 of the first
embodiment in the diaphragm 420, the plate 430, and the like. The diaphragm 420 configured of
the second membrane is suspended from the plate 430 via the spacer 400. The diaphragm 420
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is separated from the other membrane and located on the cavity 11. The spacer 400 formed of
the third film is annular. The lower end of the spacer 400 is fixed to the periphery of the
diaphragm 420, and the upper end of the spacer 400 is fixed to the middle of the plate 430.
[0035]
The plate 430 formed of the fourth membrane has a step 432 and a flat portion 433. The step of
the step 432 is a transferred shape of the end 420 a of the diaphragm 420 and is circular
extending along the end 420 a of the diaphragm 420. The flat portion 433 is formed on both
sides of the step portion 432. The through hole group 434 is composed of a large number of
through holes 36 arranged concentrically. The through hole 36 is formed in the flat portion 433
of the plate 430, avoiding the portion fixed to the spacer 400 of the plate 430 and the step
portion 432. The configuration of the detection unit of the condenser microphone 4 of the fourth
embodiment is substantially the same as that of the condenser microphone 1 of the first
embodiment, and thus the description thereof is omitted.
[0036]
2. Method of Manufacturing Condenser Microphone First, as shown in FIG. 11 (A1), the first
film 51 and the second film 52 are deposited on the wafer 50. Then, the second film 52
constituting the diaphragm 420 is formed by etching the second film 52.
[0037]
Next, as shown in FIG. 11A2, a third film 53 is deposited on the first film 51 and the second film
52. In the third film 53, a stepped portion 453a corresponding to the end 452a of the second
film 52 is formed. Next, as shown in FIG. 11 (A3), a fourth film 54 is deposited on the third film
53. As a result, a step 432 corresponding to the step 453 a of the third film 53 is formed on the
end 452 a of the second film 52 of the fourth film 54. Then, plate-like flat portions are formed on
both sides of the stepped portion 432 of the fourth film 54.
[0038]
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Next, the fourth film 54 is etched to form a large number of through holes 36 in the flat portion
of the fourth film 54. By forming the through holes 36 in the fourth film 54 in this manner, the
through holes 36 are not formed in the stepped portion 432 of the fourth film 54. Next, in the
same manner as the manufacturing method of the first embodiment, the cavity 11 (see FIG. 10) is
formed in the wafer 50, and the first film 51 and the third film 53 are selectively removed. Since
the through hole group 34 is not formed in the middle portion of the fourth film 54, the third
film 53 (see the hatched portion shown in FIG. 11 (A3)) immediately below the middle portion of
the fourth film 54 remains. , And spacers 400 (see FIG. 10) are formed.
[0039]
(Fifth to Sixth Embodiments) In the first to third embodiments, a large number of through holes
are uniformly formed at equal intervals in a plurality of different directions, that is, in a plate.
However, as long as there is no technical impediment, a large number of holes may be formed
unevenly in the plate. For example, as in the condenser microphone 5 of the fifth embodiment
shown in FIG. 12, an arrangement excluding the through holes 36 located in the step 532 from
the lattice arrangement, ie, excluding the through holes located in the step of the plate from the
basic arrangement The through holes 36 may be formed in the plate 530 in a different
arrangement. Further, for example, as in the condenser microphone 6 according to the sixth
embodiment shown in FIG. 13, the arrangement in which the through holes 36 located in the
step portion 632 are separated from the step portion 632 from the lattice arrangement. The
through holes 36 may be formed in the plate 630 in an arrangement in which the through holes
located at are moved away from the step. Also, the above-described arrangement of through
holes may be used in combination. In addition, the holes may be formed in the plate in an
arrangement in which other holes are added to the arrangement described above, in order to
enhance the function of the holes as sound wave and etching liquid passages.
[0040]
Seventh Embodiment In the above embodiments, the plate is provided with a large number of
through holes having the same opening area. However, the plate may be provided with a large
number of through holes with different opening areas. For example, as in the condenser
microphone 7 of the seventh embodiment shown in FIG. 14, even if the opening area of the
through hole 36a in the vicinity of the step portion 732 of the plate 730 is smaller than the
opening area of the through hole 36b away from the step portion 732 Good. As a result, the
degree of freedom in the arrangement of the through holes 36 is increased, so that a large
number of through holes 36 can be easily formed in the plate 730 while avoiding the steps 732
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of the plate 730.
[0041]
In the plurality of embodiments described above, since the through holes are formed in the flat
portion of the plate, the strength of the plate is higher than that in which the through holes are
formed in the step portion. Therefore, even if an external force is applied to the plate in the
manufacturing process or electrostatic attraction between the plate and the diaphragm is
generated at the time of energization, the plate is not broken. In the first to third embodiments,
the through holes uniformly formed in the plate can be used as passages for the sound wave and
the etching solution, so that the output characteristics of the condenser microphone can be
enhanced or the manufacturing process can be simplified. , Can improve the yield. The present
invention is not limited to the condenser microphones of the plurality of embodiments described
above, but can be applied to any form of condenser microphone as long as it is a condenser
microphone having a step on a plate.
[0042]
(A) is a top view of a condenser microphone of a first embodiment, (B) is a sectional view by the
B1-B1 line of (A). FIG. 7 is a cross-sectional view showing the method of manufacturing the
condenser microphone of the first embodiment. FIG. 7 is a cross-sectional view showing the
method of manufacturing the condenser microphone of the first embodiment. (A) is a plan view
of a condenser microphone according to a second embodiment, (B) is a cross-sectional view taken
along the line B4-B4 of (A). Sectional drawing which shows the manufacturing method of the
capacitor | condenser microphone of 2nd embodiment. (A) is a top view of the condenser
microphone of 3rd embodiment, (B) is sectional drawing by the B6-B6 line of (A). Sectional
drawing which shows the manufacturing method of the capacitor | condenser microphone of 3rd
embodiment. Sectional drawing which shows the manufacturing method of the capacitor |
condenser microphone of 3rd embodiment. Sectional drawing which shows the manufacturing
method of the capacitor | condenser microphone of 3rd embodiment. (A) is a top view of the
condenser microphone of a 4th embodiment, (B) is a sectional view by the B10-B10 line of (A).
Sectional drawing which shows the manufacturing method of the condenser microphone of 4th
embodiment. The top view of the condenser microphone of 5th embodiment. The top view of the
condenser microphone of a 6th embodiment. The top view of the condenser microphone of 7th
embodiment.
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Explanation of sign
[0043]
1, 2, 3, 4, 5, 6, 7: Condenser microphone, 12: first support (support), 14: second support
(support), 20, 220, 320, 420: diaphragm, 22 Bending part 30, 230, 330, 430, 530, 630, 730:
Plate, 32, 232, 332, 432, 532, 632, 732: Step part, 33, 233, 333, 433: Flat part, 34, 234, 334,
434: through holes, 36: through holes, 222: slits, 320a, 420a: end (end of diaphragm)
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