close

Вход

Забыли?

вход по аккаунту

?

DESCRIPTION JP2010136091

код для вставкиСкачать
Patent Translate
Powered by EPO and Google
Notice
This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
complete, reliable or fit for specific purposes. Critical decisions, such as commercially relevant or
financial decisions, should not be based on machine-translation output.
DESCRIPTION JP2010136091
In a semiconductor device provided with a semiconductor sensor chip for detecting pressure
fluctuation, the influence of electromagnetic waves such as sunlight on the semiconductor sensor
chip can be reduced without providing a separate member. A semiconductor sensor chip (5) for
detecting pressure fluctuation is mounted on a mounting surface (3a) of a substrate (3), and the
upper surface of the mounting surface (3a) and the semiconductor sensor chip (5) is covered by
a lid member (9). To form a hollow cavity S including the semiconductor sensor chip 5, the lid
member 9 is formed of a plate-like member, and the lid member 9 is recessed from the outer
surface 9a and protrudes from the inner surface 9b. Plate-like wall portion 21 is integrally
formed, and a bowl-shaped wall portion 21 is formed at an end of the annular peripheral wall
portion 23 rising from the inner surface 9b and at the tip of the peripheral wall portion 23 and
formed substantially parallel to the inner surface 9b The semiconductor device 1 is provided with
the top wall portion 25 and the plurality of acoustic holes 27 penetrating the peripheral wall
portion 23 in the thickness direction and communicating the hollow portion S outward. [Selected
figure] Figure 2
Semiconductor device
[0001]
The present invention relates to a semiconductor device provided with a semiconductor sensor
chip such as a microphone chip or a pressure sensor chip.
[0002]
18-04-2019
1
Conventionally, in a semiconductor device (microphone package), a cover (lid member) is
installed on a mounting surface of a substrate on which a semiconductor sensor chip for
detecting pressure fluctuations such as acoustics is mounted as in Patent Document 1, for
example. In some cases, the semiconductor sensor chip is housed in a hollow cavity defined by
the cover.
The cover is formed with an acoustic hole that communicates the hollow portion outward, and
the pressure fluctuation generated in the external space is allowed to reach the semiconductor
sensor chip through the acoustic hole. Japanese Patent Publication No. 2004-537182
[0003]
However, if a simple acoustic hole is formed in the cover, electromagnetic waves such as sunlight
can easily enter the cavity through the acoustic hole, and as a result, there is a problem that the
characteristics of the semiconductor sensor chip are easily affected by the electromagnetic wave.
. Although the semiconductor device of Patent Document 1 is provided with an environmental
barrier for preventing the penetration of sunlight or the like, it is troublesome because the
environmental barrier needs to complicate the manufacturing process of the semiconductor
device.
[0004]
The present invention has been made in view of the above-described circumstances, and an
object of the present invention is to provide a semiconductor device capable of reducing the
influence of an electromagnetic wave on a semiconductor sensor chip without providing a
separate member.
[0005]
In order to solve the above-mentioned subject, this invention proposes the following means.
In the semiconductor device according to the present invention, the semiconductor sensor chip
for detecting pressure fluctuation is mounted on the mounting surface of the substrate, and the
mounting surface and the upper side of the semiconductor sensor chip are covered by the lid
member. A semiconductor device having a hollow cavity including a semiconductor sensor chip,
18-04-2019
2
wherein the lid member is formed of a plate-like member, and the lid member protrudes from
one of its main surfaces and the other A weir-shaped wall recessed from the main surface of the
main body is integrally formed, and the weir-shaped wall is formed at an annular peripheral wall
rising from the one main surface and at the tip of the peripheral wall and A plurality of acoustic
holes are formed in the peripheral wall portion, the acoustic holes penetrating in the thickness
direction and communicating the hollow portion outward, and a plurality of acoustic holes are
formed in the peripheral wall portion. The circumferential direction of the peripheral wall portion
Characterized in that it is arranged.
[0006]
According to this semiconductor device, pressure fluctuations such as sound waves are diffracted
or reflected by one of the main surfaces of the lid member or the top plate wall due to the wave
nature, thereby making a plurality of acoustic holes formed in the peripheral wall portion The
pressure fluctuation can be detected in the semiconductor sensor chip because it propagates
through the cavity. On the other hand, most of the electromagnetic waves having high linearity
such as sunlight are shielded by the top wall portion and do not intrude into the hollow portion.
In particular, it is possible to prevent electromagnetic waves traveling straight in the thickness
direction of the lid member and the top wall from invading into the hollow portion. Therefore,
the influence of electromagnetic waves on the semiconductor sensor chip can be greatly reduced.
[0007]
Further, in the semiconductor device, when the wedge-shaped wall portion is protruded to the
hollow portion side, it is possible to prevent the miniaturization of the semiconductor device from
being hindered by providing the wedge-shaped wall portion.
[0008]
As a semiconductor device, a semiconductor sensor chip for detecting pressure fluctuation is
mounted on a mounting surface of a substrate, and the mounting surface and the upper side of
the semiconductor sensor chip are covered by a lid member, and the substrate and lid member A
semiconductor device having a hollow cavity including a semiconductor sensor chip, wherein the
lid member is constituted by a plate-like member, and the lid member is pierced in the thickness
direction and the lid member A cutting line extending along the main surface of the cover and a
bending line connecting both ends of the cutting line are formed, and an inner area portion
surrounded by the cutting line and the bending line is inclined from one main surface of the lid
member Between the inner area portion and the outer area portion of the lid member with the
18-04-2019
3
cutting line as a boundary in a state of being bent at the bending line so as to project in a state
The gap generated, the cavity sound hole for communicating the outside is defined, which the
sound hole is formed with a plurality may be.
[0009]
According to this semiconductor device, pressure fluctuation such as sound waves propagates
into the cavity through the acoustic hole by diffracting or reflecting the one main surface of the
lid member or the inner region portion due to the wave property. Therefore, the semiconductor
sensor chip can be detected.
On the other hand, the electromagnetic waves having high linearity, such as sunlight, are mostly
shielded by the inner region and do not enter the cavity.
Therefore, the influence of electromagnetic waves on the semiconductor sensor chip can be
greatly reduced.
[0010]
As a semiconductor device, a semiconductor sensor chip for detecting pressure fluctuation is
mounted on a mounting surface of a substrate, and the mounting surface and the upper side of
the semiconductor sensor chip are covered by a lid member, and the substrate and lid member A
semiconductor device having a hollow cavity including a semiconductor sensor chip, wherein the
lid member is constituted by a plate-like member, and the lid member is pierced in the thickness
direction and the lid member A score line extending along the main surface of the substrate and
two fold lines connecting both ends of the score line, the score line being disposed between the
two fold lines, the score line and the first fold line Bending at the folding line so as to project the
first area portion surrounded by the at least one main surface of the lid member in an inclined
state; (2) in a state where the second area portion surrounded by the bending line is bent at the
bending line so as to project from the other main surface of the lid member in an inclined state,
and the first area portion The gap formed between the second region portion may define an
acoustic hole for communicating the hollow portion outward, and a plurality of the acoustic holes
may be formed.
[0011]
18-04-2019
4
According to this semiconductor device, pressure fluctuations such as sound waves are diffracted
or reflected at the two regions of the lid member due to their wave nature, and propagate into
the cavity through the acoustic hole, so that the semiconductor sensor chip Can be detected.
On the other hand, electromagnetic waves having high linearity such as sunlight are mostly
shielded by the two area portions and do not intrude into the cavity. Therefore, the influence of
electromagnetic waves on the semiconductor sensor chip can be greatly reduced. Further,
according to this semiconductor device, since the acoustic hole is formed by the two area
portions respectively projecting from both main surfaces of the lid member, the opening area of
the acoustic hole can be expanded.
[0012]
According to the present invention, the influence of electromagnetic waves such as sunlight on
the semiconductor sensor chip can be largely reduced without providing a separate member.
[0013]
Hereinafter, a semiconductor device according to an embodiment of the present invention will be
described with reference to FIGS.
As shown in FIGS. 1 and 2, the semiconductor device 1 according to this embodiment includes a
substrate 3 formed in a box shape, a microphone chip (semiconductor sensor chip) 5 mounted on
a mounting surface 3 a of the substrate 3, and an LSI chip. 7 and a lid member 9 which covers
the upper side of the mounting surface 3a to form a hollow cavity S including the microphone
chip 5 and the LSI chip 7 together with the substrate 3 to constitute a so-called microphone
package.
[0014]
The microphone chip 5 is provided so as to cover the support portion 11 formed with the inner
hole 11a penetrating in the thickness direction, and the inner hole 11a of the support portion 11,
and detects the pressure fluctuation such as sound by vibration. And a unit 13. Further, the
acoustic detection unit 13 is disposed so as to face the fixed electrode 13a in a substantially plate
18-04-2019
5
shape provided so as to cover the inner hole 11a of the support 11 and at a predetermined
distance in the thickness direction of the fixed electrode 13a and the support 11. And a
diaphragm 13b that vibrates in response to pressure fluctuations. The LSI chip 7 plays a role of
driving and controlling the microphone chip 5 and, for example, an amplification circuit for
amplifying an electric signal from the microphone chip 5 and an A / D for processing the electric
signal as a digital signal. A converter, a DSP (digital signal processor) and the like are included.
[0015]
The substrate 3 is, for example, a so-called multilayer wiring substrate such as a ceramic
substrate, and is formed in a plate shape and has a bottom wall portion 15 having a mounting
surface 3a, and the mounting surface 3a so as to surround the microphone chip 5 and the LSI
chip 7. And an annular side wall 17 projecting from the For example, when the substrate 3 is
formed of a ceramic multilayer wiring substrate, the substrate 3 can be manufactured by
laminating a plurality of ceramic sheets in which conductive paths of a predetermined pattern
forming the wiring portion of the substrate 3 are formed. And the side wall part 17 can be
formed by laminating | stacking the ceramic sheet | seat formed cyclically | annularly. The
microphone chip 5 and the LSI chip 7 described above are mounted on the mounting surface 3 a
of the substrate 3 having the above configuration via a die bonding material (not shown).
Further, the microphone chip 5 is disposed such that the acoustic detection unit 13 faces the
mounting surface 3a via the inner hole 11a.
[0016]
The microphone chip 5 and the LSI chip 7 disposed on the mounting surface 3a of the substrate
3 are electrically connected to each other by the first wire 6, and the LSI chip 7 is mounted via
the second wire (not shown). It is electrically connected to the wiring part (not shown) of the
board | substrate 3 exposed to the surface 3a. The wiring portion of the substrate 3 is formed
extending to the outer surface of the substrate 3, and the microphone chip 5 and the LSI chip 7
are electrically connected to the mounting substrate in a state where the semiconductor device 1
is mounted on the mounting substrate (not shown). It has become so. Furthermore, on the
mounting surface 3a of the substrate 3, a resin sealing portion 19 is formed, which seals the LSI
chip 7 and the bonding portion between the LSI chip 7 and the first wire 6 and the second wire.
The portion 19 protects the LSI chip 7 and the bonding portion.
[0017]
18-04-2019
6
The lid member 9 is a plate-like member in which a conductive material such as a copper
material is formed in a substantially plate shape, and is fixed to the tip surface 17 a of the side
wall 17 of the substrate 3. Thereby, the mounting surface 3a of the substrate 3, the microphone
chip 5 and the upper side of the LSI chip 7 are covered by the lid member 9, and the substrate 3
and the lid member 9 form the hollow portion S including the microphone chip 5 and the LSI
chip 7. It will be done. Further, a ground connection wiring portion (not shown) is exposed at the
front end surface 17 a of the substrate 3, and the lid member 9 is electrically connected to the
ground connection wiring portion. The ground connection wiring portion is formed extending to
the outer surface of the substrate 3 so that the lid member 9 is electrically connected to the
ground wiring of the mounting substrate in a state where the semiconductor device 1 is mounted
on the mounting substrate. It has become.
[0018]
Further, the lid member 9 is integrally formed with a hook-like wall 21 which is recessed from
the outer surface (the other main surface) 9a and protrudes from the inner surface (the one main
surface) 9b. The bowl-shaped wall portion 21 is disposed above the LSI chip 7 sealed by the resin
sealing portion 19 and is formed in a substantially rectangular shape in plan view. The bowlshaped wall portion 21 is formed at an end of the peripheral wall portion 23 and an annular
peripheral wall portion 23 rising from the inner surface 9 b of the lid member 9 and is formed
extending substantially parallel to the outer surface 9 a and the inner surface 9 b of the lid
member 9 And a top plate wall portion 25. A plurality of acoustic holes 27 penetrating in the
thickness direction and communicating the hollow portion S outward are formed in the
peripheral wall portion 23, and the plurality of acoustic holes 27 are arrayed in the
circumferential direction of the peripheral wall portion 23 There is. Since the peripheral wall
portion 23 is formed to be inclined with respect to the lid member 9 and the top plate wall
portion 25, the penetrating direction of each acoustic hole 27 is with respect to the thickness
direction of the lid member 9 and the top plate wall portion 25. It is inclined. Each acoustic hole
27 is formed smaller than the dimension in the longitudinal direction of the peripheral wall 23
directed from the lid member 9 to the top wall 25. In the illustrated example, the inclination
angle of the peripheral wall 23 with respect to the lid member 9 and the top wall 25 and the size
of each acoustic hole 27 are within the hollow portion S from the outside through the acoustic
hole 27 in plan view. It is set to such an extent that it is not visible.
[0019]
18-04-2019
7
Next, a method of manufacturing the semiconductor device 1 configured as described above will
be described. When manufacturing the semiconductor device 1, the box-shaped substrate 3 is
manufactured in advance, and the microphone chip 5 and the LSI chip 7 are fixed to the
mounting surface 3a of the substrate 3 (chip mounting step). Next, the first wire 6 is disposed
between the microphone chip 5 and the LSI chip 7 by wire bonding, and the second wire is
disposed between the LSI chip 7 and the wiring portion of the substrate 3 (wiring process). Then,
after completion of the wiring process, a resin sealing portion 19 is formed to seal the entire LSI
chip 7 including the bonding portion to the above-mentioned wire (sealing process).
[0020]
Further, before and / or simultaneously with the chip mounting process, the wiring process, and
the sealing process, the hook-like wall 21 and the acoustic hole 27 are formed in the lid member
9 (lid forming step). In this lid forming step, for example, as shown in FIG. 3, first, a plurality of
acoustic holes 27 penetrating in the thickness direction is formed in the lid member 9 (acoustic
hole forming step). In addition, as shown in FIG. 1, when forming the bowl-shaped wall 21 having
a rectangular shape in a plan view, a plurality of acoustic holes 27 may be arranged in a
rectangular shape in a plan view. Then, as shown in FIGS. 3 and 4, the lid member 9 is plastically
deformed by press processing to form the bowl-shaped wall portion 21 (deformation processing
step). In this deformation processing step, as shown in FIG. 3, the lower mold C having the recess
C1 is disposed on the inner surface 9b side of the lid member 9, and an annular array of the
outer surface 9a of the lid member 9 is provided. An upper mold D having a protrusion D1 is
disposed on the upper side of the inner region of the plurality of acoustic holes 27. The shapes of
the concave portion C1 of the lower mold C and the protruding portion D1 of the mold D
correspond to the shape of the bowl-like wall portion 21.
[0021]
Thereafter, as shown in FIG. 4, when the lid member 9 is sandwiched between the two molds C
and D so that the protrusion D1 of the mold D enters the recess C1 of the mold C, the lid member
9 Is bent by the recess C1 and the protrusion D1, and the annular region portion of the lid
member 9 in which the plurality of acoustic holes 27 are formed is pressed against the inner side
surface C2 of the recess C1, and from the annular region portion of the lid member 9 The inner
region portion is pressed against the bottom surface C3 of the recess C1. Thereby, the bowlshaped wall 21 composed of the peripheral wall 23 and the top wall 25 is formed on the lid
member 9.
18-04-2019
8
[0022]
That is, in the deformation processing step described above, the lid member is subjected to
downset processing in which the inner regions of the plurality of acoustic holes 27 annularly
arranged in the lid member 9 are protruded from the inner surface 9 b of the lid member 9. A
bowl-shaped wall portion 21 composed of the peripheral wall portion 23 and the top plate wall
portion 25 is formed on the side 9. Then, after completion of the chip mounting process, the
wiring process, the sealing process, and the lid forming process described above, as shown in
FIG. 2, the hollow portion S is formed by the substrate 3 and the lid member 9. By fixing the lid
member 9 to the front end surface 17 a of the substrate 3 so that the bowl-shaped wall portion
21 protrudes toward the hollow portion S (lid installing step), the manufacturing of the
semiconductor device 1 is completed.
[0023]
In the semiconductor device 1 described above, pressure fluctuations such as sound waves are
diffracted or reflected by the outer surface 9 a of the lid member 9 or the top plate wall 25 due
to its wave nature, whereby a plurality of acoustic holes 27 formed in the peripheral wall 23 are
obtained. The pressure fluctuation can be detected at the microphone chip 5 because it
propagates into the cavity S via On the other hand, most of the electromagnetic waves having
high rectilinearity like sunlight are shielded by the top wall 25 and do not enter the cavity S. In
particular, since the acoustic hole 27 penetrates in the direction inclined with respect to the
thickness direction of the lid member 9, the electromagnetic wave which goes straight in the
thickness direction of the lid member 9 and the top plate wall 25 enters the cavity S It is possible
to prevent intrusion. Therefore, the influence of the electromagnetic wave on the microphone
chip 5 can be largely reduced.
[0024]
Further, since the bowl-shaped wall portion 21 for suppressing the penetration of the
electromagnetic wave into the hollow portion S is integrally formed on the lid member 9, it is not
necessary to separately provide a member as in the prior art, and the manufacturing process of
the semiconductor device 1 Can be avoided. Furthermore, since the bowl-shaped wall 21 is
formed to protrude toward the cavity S, the reduction in size of the semiconductor device 1 due
18-04-2019
9
to the provision of the bowl-shaped wall 21 can be prevented. Further, since the lid member 9
having conductivity is electrically connected to the ground connection wiring portion of the
substrate 3, in the state where the semiconductor device 1 is mounted on the mounting
substrate, the electromagnetic wave described above is It can also be absorbed. Therefore, the
influence of the electromagnetic wave on the microphone chip 5 can be further reduced.
[0025]
In addition, in the said embodiment, although the bowl-shaped wall part 21 was formed in planar
view substantially rectangular shape, if it is provided with the surrounding wall part 23 and the
top-plate wall part 25, it will be formed in arbitrary planar view shapes. It is possible. Further,
although the ridge-like wall portion 21 is formed so as to protrude toward the hollow portion S, it
may be formed so as to protrude outward of the semiconductor device 10, for example, as shown
in FIG. That is, the lid-like member 9 may be formed with a hook-like wall portion 21 which
protrudes from the outer surface (one main surface) 9c and is recessed from the inner surface
(the other main surface) 9d. And when forming the bowl-shaped wall part 21 shown in FIG. 5 in
the lid member 9 in the lid forming step, the inner region of the plurality of acoustic holes 27
annularly arranged in the lid member 9 in the deformation processing step May be made to
project from the outer surface 9 c of the lid member 9.
[0026]
In addition, although the acoustic hole 27 is formed smaller than the dimension in the
longitudinal direction of the peripheral wall 23 directed from the lid member 9 to the top wall
25, for example, as shown in FIGS. You may form in the magnitude | size equivalent to the
dimension of a longitudinal direction. In this case, the peripheral wall portion 23 is divided into a
plurality of portions by the plurality of acoustic holes 27. Moreover, when forming the bowlshaped wall part 21 in the lid member 9 of the said structure, although you may implement the
lid formation process similar to the said embodiment, for example, the lid member 9 in a notch |
incision formation process. Then, a broken line in the thickness direction is formed in an annular
shape in plan view, and then an inner region portion of the lid member 9 surrounded by the
broken line in the deformation process is formed on the inner surface of the lid member 9 You
may form the bowl-shaped wall part 21 by giving the downset process which protrudes from 9b.
[0027]
18-04-2019
10
In this case, the inner region portion of the lid member 9 surrounded by the broken lines is the
top plate wall 25 of the hooked wall 21 and the portion between the adjacent cutting lines is the
hooked wall. The peripheral wall portion 23 of the portion 21 is formed. Further, by performing
the above-described deformation processing step, the acoustic hole 27 which causes the hollow
portion S to communicate outward is formed by the gap generated between the inner region
portion and the outer region portion of the lid member 9 with the score line as the boundary. It
will be defined.
[0028]
Next, a reference example of the semiconductor device will be described with reference to FIGS.
In the semiconductor device of this reference example, the same parts as those of the
components of the semiconductor device 1 of the above embodiment are given the same
reference numerals, and the description thereof is omitted.
[0029]
As shown in FIGS. 8 to 10, the lid member 9 of the semiconductor device 30 penetrates in the
thickness direction and is formed on the outer surface (other main surface) 9a or the inner
surface (one main surface) 9b of the lid member 9 A score line 31a extending along the line, and
a folding line 31b connecting both ends thereof are formed. In the illustrated example, the score
line 31a extends in a direction perpendicular to the arrangement direction of the microphone
chip 5 and the LSI chip 7 in a plan view, and is formed in an arc shape bulging in a direction
away from the microphone chip 5 .
[0030]
The bending line 31b is formed closer to the microphone chip 5 than the cutting line 31a, and is
formed in a U-shape in plan view. More specifically, the bending line 31b is parallel to the cutting
line 31a so as to connect the extending end of the pair of linear parts extending from the both
ends of the cutting line 31a toward the microphone chip 5 in plan view. And an arc-shaped
curved portion extending. That is, the curved portion of the bending line 31b is formed in the
same shape as the cutting line 31a.
18-04-2019
11
[0031]
An inner region portion surrounded by the score line 31a and the folding line 31b is folded at
the folding line 31b so as to protrude from the inner surface 9b of the lid member 9 in an
inclined state. As a result, the inner region portion surrounded by the score line 31a and the
folding line 31b forms a projecting wall portion 33 which protrudes from the inner surface 9b of
the lid member 9 to the cavity portion S side. In addition, the acoustic hole 35 which causes the
hollow portion S to communicate outward is formed by the gap generated between the projecting
wall portion 33 and the region outside the projecting wall portion 33 of the lid member 9 with
the score line 31a as the boundary. It is made up.
[0032]
Here, since the bending line 31 b is formed closer to the microphone chip 5 than the cutting line
31 a, the projecting wall 33 is disposed between the acoustic hole 35 and the microphone chip 5.
Further, the protruding wall portion 33 is formed to bulge from the inner surface 9 b of the lid
member 9. In FIG. 8, the cross-sectional shape of the protruding wall portion 33 is arc-shaped
and the acoustic hole 35 is opened in a substantially semicircular shape, but for example, the
cross-sectional shape of the protruding wall portion 33 is rectangular The acoustic hole 35 may
be opened in a substantially rectangular shape.
[0033]
Then, the projecting wall portion 33 is inclined in the direction away from the microphone chip 5
with the curved portion of the bending line 31b as a starting point. Therefore, at the stage of
entering the cavity S from the acoustic hole 35, the pressure fluctuation is restricted by the
projecting wall 33 in the direction (arrow a in FIG. 9) away from the microphone chip 5. That is,
the projecting wall portion 33 has an intrusion direction restricting structure that prevents
pressure fluctuation entering the cavity S from the acoustic hole 35 from directly going from the
acoustic hole 35 to the microphone chip 5. The pressure fluctuation entering the cavity S is
reflected and diffracted in the cavity S to reach the microphone chip 5, whereby the pressure
fluctuation can be detected. A plurality of projecting wall portions 33 and acoustic holes 35
configured as described above are formed in the lid member 9, and the plurality of projecting
wall portions 33 and acoustic holes 35 are sealed by the resin sealing portion 19. It is formed
above the LSI chip 7.
18-04-2019
12
[0034]
The semiconductor device 30 configured as described above can be manufactured by performing
the chip mounting process, the wiring process, the sealing process, and the lid installation
process similar to those of the above-described embodiment, and only the lid forming process is
different. In the lid forming step, first, a cut line 31 a having a circular arc shape in plan view
penetrating in the thickness direction is formed in the lid member 9 (slit forming step). Next, the
lid member 9 is formed with a folding line 31b connecting both ends of the score line 31a, and
the inner region part of the lid member 9 surrounded by the scoring line 31a and the folding line
31b is the lid member 9 The lid member is plastically deformed by press processing so as to
project from the inner surface 9b of the cover to the hollow portion S side (deformation
processing step).
[0035]
After this deformation processing step, an inner region portion of the lid member 9 surrounded
by the score lines 31 a and the folding line 31 b is made a projecting wall portion 33 projecting
from the inner surface 9 b of the lid member 9. Further, an acoustic hole 35 is defined from the
outer surface 9a side to the inner surface 9b side of the lid member 9 by a gap formed between
the inner region portion and the outer region portion of the lid member 9 with the score line 31a
as a boundary. . That is, in the deformation processing step described above, the lid wall member
9 is provided with a projecting wall portion by performing downset processing in which the inner
region portion surrounded by the score line 31a and the bending line 31b is projected from the
inner surface 9b of the lid member 9 33 and acoustic holes 35 are formed.
[0036]
According to the semiconductor device 30, the same effect as the semiconductor device 1 of the
above-described embodiment can be obtained. In other words, pressure fluctuations such as
sound waves are propagated through the acoustic hole 35 into the hollow portion S by being
diffracted or reflected on the inner surface 9 b of the lid member 9 or the projecting wall portion
33 due to the wave nature. It can be detected at the chip 5. On the other hand, most of the
electromagnetic waves having high linearity such as sunlight are shielded by the projecting wall
portion 33 and do not intrude into the hollow portion. Therefore, the influence of the
18-04-2019
13
electromagnetic wave on the microphone chip 5 can be largely reduced. Further, since the
projecting wall portion 33 is integrally formed with the lid member 9, complication of the
manufacturing process of the semiconductor device 30 can be avoided. Furthermore, since the
protruding wall portion 33 is formed to protrude toward the hollow portion S, it is possible to
prevent inhibition of the miniaturization of the semiconductor device 30 due to the formation of
the protruding wall portion 33.
[0037]
In the reference example, the protruding wall portion 33 protrudes from the inner surface 9b of
the lid member 9, but may protrude from the outer surface 9a of the lid member 9, for example.
In this case, the bending line 31b is formed on the side farther from the microphone chip 5 than
the cutting line 31a, and the projecting wall is in the stage where the pressure fluctuation enters
the cavity S from the acoustic hole 35 as in the reference example. It is more preferable that the
part 33 restricts in the direction away from the microphone chip 5.
[0038]
In addition, although the acoustic hole 35 is formed using the projecting wall portion 33
projecting from one of the outer surface 9a and the inner surface 9b of the lid member 9, as
shown in FIGS. It may be formed using a pair of projecting wall portions 43 and 44 which project
on both the outer surface 9 a and the inner surface 9 b of the lid member 9. That is, the lid
member 9 has a score line 41a penetrating in the thickness direction and extending along the
outer surface (the other main surface) 9a and the inner surface (the one main surface) 9b, and
two bendings connecting the both ends thereof The lines 41b and 41c are formed, and the score
line 41a is disposed between the two fold lines 41b and 41c.
[0039]
Note that the score line 41a and the first bending line 41b in the illustrated example are the
same as the score line 31a and the bending line 31b in the reference example, respectively, and
the first bending line 41b is closer to the microphone chip 5 than the score line 41a. Is formed.
The second bending line 41c is formed at a position spaced apart from the microphone chip 5
more than the cutting line 41a, and is formed in a U shape in a plan view. More specifically, the
second bending line 41c is cut so as to connect the extending ends of the pair of linear portions
18-04-2019
14
extending from the both ends of the cutting line 41a in a direction away from the microphone
chip 5 in plan view. And an arc-shaped curved portion extending parallel to the line 41a. That is,
the curved portion of the second bending line 41c is formed in the same shape as the cutting line
41a and the first bending line 41b.
[0040]
The first area line portion surrounded by the score line 41a and the first bending line 41b is a
first bending line so as to project from the inner surface 9b of the lid member 9 in an inclined
state, similarly to the protruding wall portion 33 of the reference example. By being bent at 41 b,
a substantially plate-shaped first projecting wall portion 43 which protrudes from the inner
surface 9 b of the lid member 9 to the cavity S side is formed. On the other hand, the second
region portion surrounded by the score line 41a and the second bending line 41c is bent at the
bending line 31b so as to protrude from the outer surface 9a of the lid member 9 in an inclined
state. A substantially plate-like second projecting wall portion 44 is formed to project outward
from the outer surface 9a. And the acoustic hole 45 which makes the cavity part S connect
outward is defined by the clearance gap which arises between the two protrusion wall parts 43
and 44 by making the cutting line 41a into a boundary.
[0041]
The first projecting wall portion 43 is formed to bulge from the inner surface 9 b of the lid
member 9 similarly to the projecting wall portion 33 of the reference example, and the second
projecting wall portion 44 is the lid member 9. It is formed to bulge from the outer surface 9a of.
Here, if the cross sectional view shape of the two projecting wall portions 43 and 44 is formed in
an arc shape, the acoustic hole 45 opens in a substantially circular shape. The first projecting
wall portion 43 is inclined in a direction away from the microphone chip 5 starting from the
curved portion of the first bending line 41b, as in the projecting wall portion 33 of the reference
example. On the other hand, the second protruding wall portion 44 is inclined in a direction
approaching the microphone chip 5 starting from the curved portion of the second bending line
41c. Therefore, the pressure fluctuation is restricted in the direction (arrow b in FIG. 12) away
from the microphone chip 5 by the projecting wall portions 43 and 44 at the stage of entering
the cavity S from the acoustic hole 45. A plurality of first projecting wall portions 43, second
projecting wall portions 44, and acoustic holes 45 configured as described above are formed in
the lid member 9, and the plurality of first projecting wall portions 43, second projections are
formed. The wall portion 44 and the acoustic hole 45 are formed above the LSI chip 7 sealed by
the resin sealing portion 19.
18-04-2019
15
[0042]
The first projecting wall portion 43, the second projecting wall portion 44, and the acoustic hole
45 can be formed by the same lid forming process as the above-described embodiment.
Specifically, in the cut forming step, the cut line 41 a may be formed in the lid member 9. In
addition, in the deformation processing step, two fold lines 41b and 41c connecting both ends of
the score line 41a are formed in the lid member 9, and the score line 41a and the first fold line in
the lid member 9 are formed. The first area portion surrounded by 41b is projected from the
inner surface 9b of the lid member 9 to the cavity S side, and the second region portion of the lid
member 9 surrounded by the score line 41a and the second bending line 41c is lidified. The lid
member 9 may be plastically deformed by pressing so as to project outward from the outer
surface 9 a of the body member 9. That is, in the deformation processing step described above,
downset processing is performed in which the first region portion surrounded by the score line
41a and the first bending line 41b is projected from the inner surface 9b of the lid member 9,
and the score line 41a and the second line The projecting wall portions 43 and 44 and the
acoustic holes 45 are formed in the lid member 9 by performing an upset process in which the
second region portion surrounded by the folding line 41 c is made to project from the outer
surface 9 a of the lid member 9.
[0043]
According to the semiconductor device 40 configured as described above, the same effects as the
above-described reference example can be obtained. That is, pressure fluctuations such as sound
waves propagate in the cavity S through the acoustic holes 45 by being diffracted or reflected at
the two projecting wall portions 43 and 44 of the lid member 9 due to their wave nature. It can
be detected at the microphone chip 5. On the other hand, most of the electromagnetic waves
having high linearity such as sunlight are shielded by the two projecting wall portions 43 and 44
and do not intrude into the hollow portion S. Therefore, the influence of the electromagnetic
wave on the microphone chip 5 can be largely reduced. Further, according to the semiconductor
device 40, since the acoustic hole 45 is formed by the two projecting wall portions 43 and 44
respectively projecting from the outer surface 9a and the inner surface 9b of the lid member 9,
the opening area of the acoustic hole 45 can be enlarged. Can be
[0044]
18-04-2019
16
In the lid member 9 configured as shown in FIGS. 8 to 12, the cut lines 31a, 41a for forming the
projecting wall portions 33, 43, 44 and the acoustic holes 35, 45 are formed in an arc shape in
plan view. However, it may be formed in any plan view shape. Further, the bending lines 31b,
41b and 41c are not limited to the shape shown in FIG. 8, and may be formed in any plan view as
long as they are formed so as to connect both ends of the cutting lines 31a and 41a.
[0045]
Furthermore, in all the embodiments and reference examples described above, the acoustic holes
27, 35, 45 are formed above the LSI chip 7, that is, the openings are concentrated in a biased
region of the hollow portion S in plan view. However, the present invention is not limited to this,
and it may be formed so as to be open uniformly to the hollow portion S viewed in plan.
Specifically, as shown in, for example, FIGS. 13 and 14, the lid-like member 9 is formed with a
bowl-like wall 121 having the same shape as the bowl-like wall 21 described in FIGS. The
peripheral wall 123 of 121 is made to be along the inner side surface 17b of the side wall 17 of
the substrate 3 in plan view. Then, a plurality of acoustic holes 127 are formed uniformly in the
circumferential direction of the peripheral wall portion 123 of the bowl-shaped wall portion 121.
As a result, the plurality of acoustic holes 127 are disposed in the vicinity of the inner side
surface 17 b of the side wall portion 17 of the substrate 3 and open uniformly to the hollow
portion S. Although the arrangement corresponding to FIGS. 1 and 2 has been described with
respect to the arrangement of the plurality of acoustic holes 127, the present invention can be
similarly applied to all the arrangements described in FIGS. When a plurality of acoustic holes are
opened in a biased region of the cavity S, resonance may occur in the cavity S due to standing
waves, and the frequency characteristics of the microphone chip 5 may vary. On the other hand,
if the plurality of acoustic holes 127 are arranged as in the above configuration, the scattered
waves of sound in the cavity S are weakened, and the generation of the above-described
resonance can be suppressed. As a result, the frequency characteristics of the microphone chip 5
of the semiconductor device 101 can be flattened.
[0046]
Further, in all the embodiments and reference examples described above, the substrate 3 is
configured to include the bottom wall portion 15 and the side wall portion 17, but the present
invention is not limited to this. It is sufficient that the shape can be formed. That is, for example,
the substrate 3 may be constituted only by the bottom wall portion 15, and in this case, the lid
member 9 is formed such that the hollow portion S is formed in a state of being disposed on the
18-04-2019
17
mounting surface 3 a of the substrate 3 For example, it may be formed in a box shape. The boxshaped lid member 9 can be obtained, for example, by subjecting a plate-like member to pressing
or the like. Further, the acoustic holes 27, 35, 45, the bowl-shaped wall portion 21 and the
projecting wall portions 33, 43, 44 formed in the box-shaped lid member 9 are resin-sealed in
the same manner as the embodiment and the reference example. It may be formed at a position
opposite to the LSI chip 7 but may be formed, for example, on the side wall portion of the lid
member 9 erected on the mounting surface 3 a of the substrate 3.
[0047]
In addition, although the substrate 3 and the lid member 9 form a cavity S including the
microphone chip 5 and the LSI chip 7, for example, a cavity including only the microphone chip
5 may be formed. In this case, the microphone chip 5 and the LSI chip 7 may be electrically
connected using, for example, the wiring portion of the substrate 3 instead of the first wire 6.
[0048]
Furthermore, although the substrate 3 on which the microphone chip 5 is mounted is formed of
a so-called multilayer wiring substrate such as a ceramic substrate, the present invention is not
limited thereto, and the mounting surface 3a for the microphone chip 5 is The microphone chip
5 disposed at 3a may be electrically connected to the outside. Therefore, the substrate 3 may be
formed of, for example, a mold substrate in which a lead frame is sealed by a resin mold portion.
When the substrate 3 is formed of a molded substrate, a plurality of leads constituting the lead
frame electrically connect the external terminals for electrically connecting the microphone chip
5 to the mounting substrate, and the lid member 9 to the ground wiring of the mounting
substrate. Plays a role as a ground connection terminal.
[0049]
The embodiment of the present invention has been described in detail with reference to the
drawings, but the specific configuration is not limited to this embodiment, and design changes
and the like within the scope of the present invention are also included.
[0050]
18-04-2019
18
FIG. 1 is a schematic plan view showing a semiconductor device according to an embodiment of
the present invention.
It is AA arrow sectional drawing of FIG. It is a schematic sectional drawing which shows the
method of forming a bowl-shaped wall part in the cover member which comprises the
semiconductor device of FIG. It is a schematic sectional drawing which shows the method of
forming a bowl-shaped wall part in the cover member which comprises the semiconductor device
of FIG. FIG. 6 is a schematic side sectional view showing a semiconductor device according to
another embodiment of the present invention. FIG. 21 is a schematic plan view showing a
semiconductor device according to another embodiment of the present invention. FIG. 7 is a
cross-sectional view of the semiconductor device of FIG. It is a schematic plan view which shows
the reference example of a semiconductor device. It is EE arrow sectional drawing of FIG. It is FF
arrow sectional drawing of FIG. It is a schematic plan view which shows the modification of the
semiconductor device shown to FIGS. It is the GG arrow directional cross-sectional view of FIG. It
is a schematic plan view which shows the modification of the semiconductor device shown to
FIG. It is the HH arrow directional cross-sectional view of FIG.
Explanation of sign
[0051]
1, 10, 30, 40, 101 ... semiconductor device, 3 ... substrate, 3a ... mounting surface, 5 ...
microphone chip (semiconductor sensor chip), 9 ... lid member, 9a ... outer surface (other main
surface), 9b ... Inner surface (one main surface), 9c: outer surface (one main surface), 9d: inner
surface (other main surface) 21, 121: ridged wall portion 23, 123: peripheral wall portion, 25:
top plate wall portion, 27, 127: acoustic hole, 31a: cut line, 31b: bending line, 33: projecting wall
(inner region), 35: acoustic hole, 41a: cut line, 41b: first bending line, 41c: second bending Line
43: first projecting wall (first region portion) 44: second projecting wall (second region) 45
acoustic hole S: cavity
18-04-2019
19
Документ
Категория
Без категории
Просмотров
0
Размер файла
35 Кб
Теги
description, jp2010136091
1/--страниц
Пожаловаться на содержимое документа