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DESCRIPTION JP2012182683

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DESCRIPTION JP2012182683
An object of the present invention is to provide a semiconductor device capable of sufficiently
absorbing stress from a substrate to a semiconductor element, and a method of manufacturing
the same. A semiconductor device according to one aspect of the present invention includes a
substrate, a first elastic body formed on the surface of the substrate, and a second elastic body
formed on the surface of the first elastic body. A second elastic body 13 having an elastic
modulus smaller than that of the first elastic body 14 and a semiconductor element 12 fixed to
the first elastic body 14 by the second elastic body 13 are provided. [Selected figure] Figure 1B
Semiconductor device and method of manufacturing the same
[0001]
The present invention relates to a semiconductor device having a structure capable of reducing
stress on a semiconductor element at the time of mounting, and a method of manufacturing the
same.
[0002]
Conventionally, a semiconductor device is formed by mounting a semiconductor element on a
lead frame or a substrate via a die bonding material, sealing the semiconductor element with a
resin, and packaging the semiconductor element.
In the BGA (Ball Grid Array) and PA (Power Amp) modules, an organic substrate is used as a
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substrate to be mounted for cost reduction. Since the organic substrate used here is a laminated
structure of core agent, metal, resist, etc., heat history in the die bonding process, curing in the
resin sealing process, etc., and reflow in the motherboard mounting (secondary mounting)
process, etc. As a result, the organic substrate is warped. The warpage of the organic substrate is
transmitted as a stress to the semiconductor element, which causes an electrical characteristic
abnormality, a crack, and peeling at a bonding interface. Furthermore, at present, semiconductor
devices are becoming thinner and stacked for the purpose of further downsizing, reduction in
height, and higher performance of semiconductor packages, so that semiconductor devices are
easily affected by the warpage of the organic substrate. There is.
[0003]
In addition, a MEMS (Micro Electro Mechanical Systems) device manufactured by applying a
manufacturing technique of a semiconductor device is also susceptible to heat and stress at the
time of assembly. In particular, in a semiconductor device provided with a MEMS microphone
element, a weak diaphragm of the MEMS microphone element that receives sound waves is
susceptible to stress and the like. For example, stress at the time of mounting the MEMS
microphone element distorts the MEMS microphone element, so that the diaphragm is deformed
and the sensitivity is deteriorated. This stress is generated by the difference in thermal expansion
coefficient between the substrate and the MEMS microphone element. Conventionally, an
adhesive between the substrate and the MEMS microphone element plays a role of absorbing
stress (see, for example, Patent Document 1).
[0004]
One of the methods for mounting the MEMS microphone element is a method of bonding to a
substrate using a thermosetting resin. FIG. 7 is a cross-sectional view of a MEMS microphone
module using a conventional MEMS microphone element. In this module, the MEMS microphone
element 101 with a diaphragm is fixed to the mounting substrate 102 via the adhesive 103, and
the electrode pad 104 of the MEMS microphone element 101 and the electrode land 105 of the
mounting substrate 102 are connected by the wire 106 ing.
[0005]
JP, 2008-199353, A
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[0006]
However, the MEMS microphone module as an example of the semiconductor device of the
related art has the following problems.
[0007]
As described above, there is a problem that stress is applied to the semiconductor element based
on the difference between the thermal expansion coefficients of the semiconductor element and
the substrate, and the characteristics of the semiconductor element change.
In order to reduce the stress on the semiconductor element, (1) to increase the film thickness of
the adhesive to increase the volume of the adhesive, (2) to lower the elastic modulus of the
adhesive and to absorb the stress with the adhesive Measures are taken.
[0008]
In measure (1), it is necessary to increase the thixo ratio of the adhesive to make it difficult to
flow.
In order to increase the thixotropy, it is necessary to increase the diameter of the filler contained
in the adhesive or to increase the content ratio of the filler contained in the adhesive. Here, as in
the case of a semiconductor element provided with a diaphragm which is a converter, as an
example, when the adhesive surface of the diaphragm in the semiconductor element, that is, the
pedestal supporting the diaphragm is frame-shaped, the width is adjusted to the width of this
frame The glue must be drawn using an internal diameter nozzle. However, since the width of the
frame is narrowed along with the miniaturization of the semiconductor element, the inner
diameter of a smaller nozzle is required, but if the filler content ratio of the adhesive and the
filler diameter are large, the nozzle is smaller. It is easily clogged and difficult to draw thinly.
Generally, the nozzle internal diameter should be three times larger than the maximum diameter
of the filler.
[0009]
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In measure (2), in order to lower the elastic modulus of the adhesive, it is necessary to reduce the
filler content ratio and to reduce the filler diameter. However, in this case, the thickness of the
adhesive decreases, and the stress can not be absorbed sufficiently.
[0010]
From the above, it is difficult to solve the problem that stress is applied from the substrate to the
semiconductor element to change the characteristics of the semiconductor element in any of the
measures (1) and (2).
[0011]
Therefore, the present invention has been made to solve the above-described problems, and it is
an object of the present invention to provide a semiconductor device capable of sufficiently
absorbing stress from a substrate to a semiconductor element, and a method of manufacturing
the same. .
[0012]
In order to achieve the above object, a semiconductor device according to an aspect of the
present invention is formed on a substrate, a first elastic body formed on the surface of the
substrate, and a surface of the first elastic body. A second elastic body having an elastic modulus
higher than that of the elastic body, and a first semiconductor element fixed to the first elastic
body by the second elastic body.
[0013]
As a result, the first elastic body softer than the second elastic body is formed immediately below
the second elastic body, thereby curing at the time of assembly of the semiconductor device (cure
in the die bonding step and sealing step), and secondary Substrate stress generated from heat
treatment such as reflow at the time of mounting can be efficiently absorbed by the first elastic
body.
Therefore, cracking, peeling, and characteristic deterioration of the semiconductor element can
be reduced.
[0014]
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Further, since the first elastic body has a function of absorbing the substrate stress, the material
of the second elastic body can be selected centering on the function of fixing the semiconductor
element to the substrate.
Therefore, when drawing and coating the second elastic body by die bonding or the like, it is
possible to use, as the material of the second elastic body, a material having a low viscosity which
does not easily clog even when a nozzle having a small inner diameter is used. You can expand
the choice of body materials.
As a result, it is possible to cope with the miniaturization of the semiconductor element.
[0015]
The first semiconductor element may include a pedestal and a diaphragm provided on a surface
of the pedestal so as to cover a through hole penetrating the pedestal in a thickness direction.
[0016]
Thereby, the semiconductor element can be provided with the converter element.
In particular, in the case where the semiconductor element is a MEMS microphone element as a
transducer element formed using MEMS technology, the diaphragm is fragile, and thus the
influence of the substrate stress is remarkable. However, since the first elastic body softer than
the second elastic body is formed immediately below the second elastic body, the first elastic
body can efficiently absorb the substrate stress generated from the heat treatment or the like. As
a result, the stress on the MEMS microphone element after mounting can be reduced, the
deformation of the fragile diaphragm can be alleviated, and the characteristic deterioration of the
semiconductor device can be suppressed to realize a semiconductor device with high sensitivity.
[0017]
The elastic modulus of the first elastic body may be 100 MPa.
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[0018]
The thickness of the first elastic body may be 20 to 40 μm.
[0019]
Thereby, the first elastic body can more efficiently absorb the substrate stress generated from
the heat treatment or the like, and the cracks, the peeling and the characteristic deterioration of
the semiconductor element can be efficiently reduced.
[0020]
The semiconductor device may further include a second semiconductor element formed on the
surface of the substrate, electrically connected to the first semiconductor element, and
amplifying an output signal of the first semiconductor element.
[0021]
Thereby, when the semiconductor element is a MEMS microphone element, it is possible to
amplify the sound wave converted into an electric signal by the MEMS microphone element.
[0022]
In a method of manufacturing a semiconductor device according to an aspect of the present
invention, a step of forming a first elastic body on a surface of a substrate, and a second elastic
body having a higher elastic modulus than the first elastic body And affixing to the first elastic
body.
[0023]
As a result, the first elastic body softer than the second elastic body is formed immediately below
the second elastic body, thereby curing at the time of assembly of the semiconductor device (cure
in the die bonding step and sealing step), and secondary Substrate stress generated from heat
treatment such as reflow at the time of mounting can be efficiently absorbed by the first elastic
body.
Therefore, it is possible to manufacture a semiconductor device capable of reducing cracking,
peeling, and characteristic deterioration of a semiconductor element.
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[0024]
Further, since the first elastic body has a function of absorbing the substrate stress, the material
of the second elastic body can be selected centering on the function of fixing the semiconductor
element to the substrate.
Therefore, when drawing and coating the second elastic body by die bonding or the like, it is
possible to use, as the material of the second elastic body, a material having a low viscosity which
does not easily clog even when a nozzle having a small inner diameter is used. You can expand
the choice of body materials.
As a result, it is possible to cope with the miniaturization of the semiconductor element.
The first semiconductor element may include a pedestal and a diaphragm provided on a surface
of the pedestal so as to cover a through hole penetrating the pedestal in a thickness direction.
[0025]
Thereby, the semiconductor device can include the MEMS microphone device.
In particular, in the case where the semiconductor element is a MEMS microphone element, the
diaphragm is fragile and thus is significantly affected by substrate stress.
However, since the first elastic body softer than the second elastic body is formed immediately
below the second elastic body, the first elastic body can efficiently absorb the substrate stress
generated from the heat treatment or the like. As a result, the stress on the MEMS microphone
element after mounting can be reduced, the deformation of the fragile diaphragm can be
alleviated, and the characteristic deterioration of the semiconductor device can be suppressed to
realize a semiconductor device with high sensitivity.
[0026]
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Further, the method for manufacturing a semiconductor device further includes the step of
forming a second semiconductor element electrically connected to the first semiconductor
element on the surface of the substrate and amplifying an output signal of the first
semiconductor element. May be included.
[0027]
Thereby, when the semiconductor element is a MEMS microphone element, it is possible to
amplify the sound wave converted into an electric signal by the MEMS microphone element.
[0028]
According to the present invention, the stress from the substrate to the semiconductor element is
used even when an adhesive having a low viscosity is used as the adhesive between the substrate
and the semiconductor element to prevent clogging even when the nozzle having a small inner
diameter is used. And a method of manufacturing the same.
[0029]
FIG. 1 is a plan view showing an example of a semiconductor device according to an embodiment
of the present invention.
FIG. 1B is a cross-sectional view (a cross-sectional view along an alternate long and short dash
line EE ′ in FIG. 1A) showing an example of a semiconductor device according to an
embodiment of the present invention.
FIG. 7 is a process cross-sectional view illustrating an example of the method of manufacturing
the semiconductor device according to the embodiment of the present invention.
It is a figure which shows an example of the characteristic fluctuation of the diaphragm of the
semiconductor device which concerns on embodiment of this invention. It is sectional drawing
which shows the filler contained in the 2nd elastic body of the semiconductor device which
concerns on embodiment of this invention. It is a figure which shows the relationship between a
filler content ratio and the thickness of a 2nd elastic body. It is a figure which shows the
relationship between a filler content ratio and the elasticity modulus of a 2nd elastic body. It is
sectional drawing which shows an example of the conventional MEMS microphone module.
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[0030]
Hereinafter, preferred embodiments of the semiconductor device according to the present
invention will be described in detail with reference to the drawings.
[0031]
FIG. 1A is a plan view showing an example of a semiconductor device 10 according to an
embodiment of the present invention.
Further, FIG. 1B is a cross-sectional view (cross-sectional view along an alternate long and short
dash line EE ′ in FIG. 1A) showing an example of the semiconductor device 10 according to the
embodiment of the present invention.
[0032]
The semiconductor device 10 according to the embodiment of the present invention is an
example of a converter module which has the diaphragm 17 and converts the vibration of the
diaphragm 17 by the sound wave into an electric signal.
[0033]
As shown in FIGS. 1A and 1B, the semiconductor device 10 includes a substrate 11, a
semiconductor element (first semiconductor element) 12 fixed (bonded) to the first elastic body
14 by the second elastic body 13, and the substrate 11. A first elastic body 14 formed on the first
main surface (surface) of the first and second elastic bodies 13 formed on the surface of the first
elastic body 14 and having a higher elastic modulus than the first elastic body 14; A wire 18 and
an electrode land 19 are provided.
[0034]
The semiconductor element 12 has a first main surface (front surface) and a second main surface
(back surface) opposite to the first main surface, and penetrates from the first main surface to
the second main surface ( The pedestal 16 is formed on the pedestal 16 in which the through
hole 15 is formed, and the pedestal 16 is formed on the first main surface of the pedestal 16 so
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as to cover a part of the through hole 15 A diaphragm 17, which is a diaphragm of the thin film,
and an electrode pad 21 are provided.
The semiconductor element 12 is an example of a converter that converts the vibration of the
diaphragm 17 into an electric signal, and is, for example, a MEMS microphone element.
[0035]
The pedestal 16 is a pedestal for supporting the diaphragm 17.
The first main surface is, for example, the upper surface of the pedestal 16, and the second main
surface is the surface opposite to the first main surface, for example, the lower surface of the
pedestal 16. The pedestal 16 is made of, for example, silicon or the like.
[0036]
The pedestal 16 is a prism whose bottom is a rhombus, as shown in FIGS. 1A and 1B. Assuming
that four apexes of the bottom surface of the pedestal 16 are ABCD, for example, the angle
between the side AB and the side DA is 70 °, and the angle between the side BC and the side CD
is 110 °. The width of the pedestal 16 is, for example, about 100 μm. Here, the width of the
pedestal 16 is the distance between the inner wall facing the through hole 15 of the pedestal 16
and the outer wall of the pedestal 16 and indicates the distance of the thinnest portion. In FIG.
1A, since the through hole 15 is in the form of a rectangular prism having a hexagonal bottom,
the width of the pedestal 16 is one side of the rhombic pedestal 16 and parallel to the one side,
and forms a hexagonal through hole 15. It is a distance to one side of the side closest to the one
side.
[0037]
The diaphragm 17 is a diaphragm that is vibrated by a sound wave and converts the vibration
into an electric signal. The diaphragm 17 is made of, for example, an inorganic metal thin film
such as SiO 2 and SiN. The diaphragm 17 is made of, for example, two inorganic metal thin films
constituting a capacitive element, and converts the vibration into an electric signal by changing
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the capacitance by the vibration. The through hole 15 is formed to make the diaphragm 17 easily
vibrate and to improve the detection accuracy of the sound wave. A sound hole penetrating the
substrate 11 in the thickness direction may be formed immediately below the semiconductor
element 12 corresponding to the diaphragm 17 (not shown).
[0038]
The electrode pad 21 is an electrode pad 21 for outputting the electric signal converted by the
diaphragm 17 to the outside of the semiconductor element 12. As shown in FIGS. 1A and 1B, a
wire 18 is connected to the electrode pad 21. The electrode pad 21 is made of, for example, gold,
aluminum, copper or the like.
[0039]
The first elastic body 14 is formed to selectively cover the first main surface of the substrate 11
and is softer in hardness than the second elastic body 13. The second elastic body 13 is formed
between the bottom of the pedestal 16 and the first elastic body 14 and covers a part of the side
surface of the pedestal 16. The first elastic body 14 and the second elastic body 13 are
interposed between the substrate 11 and the pedestal 16.
[0040]
The substrate 11 is a mounting substrate for mounting the semiconductor element 12. The
substrate 11 has a laminated structure of a wiring 20 made of a metal such as Au, Cu, Pb, Ni or
the like and a base made of a resin such as glass epoxy or a ceramic. Further, a first elastic body
14 made of a resist is provided on the first main surface and the second main surface of the
substrate 11 so as to selectively protect the surface of metal or the like. The physical properties
of the first elastic body 14 will be described in detail later.
[0041]
The second elastic body 13 bonds the substrate 11 and the semiconductor element 12 via the
first elastic body 14. As shown in FIG. 1B, the second elastic body 13 is formed to adhere the
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lower surface of the pedestal 16 and the substrate 11 and to cover a part of the side surface of
the pedestal 16.
[0042]
Here, physical properties of the first elastic body 14 and the second elastic body 13 will be
described.
[0043]
The first elastic body 14 is softer than the second elastic body 13, that is, the elastic modulus is
lower than that of the second elastic body 13, and the elastic modulus of the first elastic body 14
is 100 MPa or less, specifically 90 MPa or less.
Specifically, the first elastic body 14 is made of a viscoelastic body such as an epoxy acrylate
type, a silicone type, and a urethane type. The thickness of the first elastic body 14 is, for
example, 20 to 40 μm between the second elastic body 13 and the upper surface of the wiring
20.
[0044]
Specifically, the second elastic body 13 is made of a viscoelastic body such as epoxy acrylate
type, silicone type, polyimide type and urethane type. The main agent to be used may be
considered other than those described above, but there is a case where the curing of the second
elastic body 13 is inhibited due to the compatibility with the first elastic body 14 (epoxy-silicone
etc.). It is appropriately selected according to the main agent of the body 14. Further, the elastic
modulus of the second elastic body 13 may be higher than the elastic modulus of the first elastic
body 14, and the value thereof is not particularly limited. In addition, the second elastic body 13
covers the side surface of the pedestal 16 in the range of 10 to 250 μm from the lower surface
of the pedestal 16.
[0045]
The wire 18 is a wire electrically connecting the electrode pad 21 and the electrode land 19. The
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wire 18 is made of, for example, copper and gold. Here, the distance between the electrode pad
21 and the electrode land 19 (the shortest distance in a plane parallel to the surface of the
substrate 11) is, for example, 0.4 mm. Therefore, the wire 18 has a length equal to or greater
than the distance (0.4 mm).
[0046]
The electrode land 19 is an electrode to which the wire 18 is connected. The electrode land 19 is
connected to the wiring 20 and transmits an electrical signal output from the semiconductor
element 12 through the wire 18 to the wiring 20. The electrode lands 19 are made of, for
example, gold and copper. The electrode land 19 corresponds to a portion of the wiring 20
covered by the first elastic body 14 exposed to the outside by the opening formed in the first
elastic body 14.
[0047]
The wiring 20 is a wiring 20 for transmitting an electrical signal output from the semiconductor
element 12 to a predetermined circuit (not shown). The wiring 20 is made of, for example,
copper or the like. The predetermined circuit is a circuit that performs amplification of an electric
signal, conversion of the electric signal to audio data, and the like.
[0048]
The semiconductor device 10 may further include a semiconductor element (second
semiconductor element) that is formed on the surface of the substrate 11, is electrically
connected to the semiconductor element 12, and amplifies the output signal of the
semiconductor element 12.
[0049]
Subsequently, a method of manufacturing the MEMS microphone module 100 according to the
embodiment of the present invention will be described with reference to FIG.
FIG. 2 is a process sectional view showing an example of a method of manufacturing the
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semiconductor device 10 according to the embodiment of the present invention.
[0050]
First, prepare a <110> wafer. The <110> wafer is an assembly in which a plurality of
semiconductor elements 12 each having an electrode pad 21, a diaphragm 17, a through hole
15, and a pedestal 16 are formed. The semiconductor element 12 is formed by a known method.
[0051]
Next, the <110> wafer is singulated by stealth dicing to form a semiconductor element 12 as
shown in FIG. 2A. Note that FIG. 2A shows one semiconductor element 12 out of the plurality of
semiconductor elements 12 formed by singulating the <110> wafer.
[0052]
Next, a plurality of substrates 11 are prepared corresponding to the plurality of semiconductor
elements 12 (not shown). Each of the plurality of substrates 11 is exposed on the surface of the
substrate made of glass epoxy resin or the like by the wiring 20 made of copper or the like, the
second elastic body 13 and the opening formed in the second elastic body 13. An electrode land
19 is formed.
[0053]
Here, for example, materials such as epoxy acrylate type, silicone type, urethane type, etc. are
applied on the surface of the substrate 11 so as to open the electrode land 19 by screen printing.
2 elastic body 13 is formed. Alternatively, the above-mentioned material to which UV (ultraviolet)
reactivity is added is formed in a sheet form on the surface of the substrate 11, and after the
sheet is adhered to the surface of the substrate 11, a pattern is formed on the adhered material
using photolithography. It can also be formed by Alternatively, it can be formed by printing and
applying the above-mentioned liquid material to which UV reactivity has been added onto the
surface of the substrate 11, and then performing patterning on the printing-applied material
using photolithography.
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[0054]
Next, as shown in FIG. 2B, the second elastic body 13 is formed on the surface of each of the
plurality of substrates 11 (specifically, the second elastic body 13), specifically, the pedestal 16
Draw with the nozzle along the shape of the lower surface of the. For example, a second elastic
body 13 of epoxy acrylate type having a viscosity of 9500 cP and a thixo ratio of 4.5 is used as
an adhesive between the semiconductor element 12 and the substrate 11 (specifically, the
second elastic body 13) with a nozzle having an inner diameter of 100 μm. draw. Note that FIG.
2B shows one of the plurality of substrates 11 and the semiconductor element 12 and the
semiconductor element 12.
[0055]
Next, the plurality of semiconductor elements 12 are bonded to the corresponding substrate 11
by the second elastic body 13 applied on the surface of the substrate 11 and having a higher
elastic modulus than the first elastic body 14. Then, the semiconductor element 12 is fixed to the
substrate 11 by curing the second elastic body 13. A semiconductor element (second
semiconductor element) having an amplification function to amplify an output signal of the
semiconductor element 12 may be fixed adjacent to the semiconductor element 12. In other
words, a semiconductor element (second semiconductor element) which is electrically connected
to the semiconductor element 12 and amplifies the output signal of the semiconductor element
12 may be formed on the surface of the substrate 11.
[0056]
Next, as shown in FIG. 2C, the electrode pads 21 and the electrode lands 19 are electrically
connected to each of the plurality of semiconductor elements 12 by wire bonding using the wires
18. When a semiconductor element having an amplification function is also fixed next to the
semiconductor element 12, the electrode pad 21 and the semiconductor element having an
amplification function are electrically connected by the wire 18, and a semiconductor element
having an amplification function is further connected. By electrically connecting the electrode
land 19 with the wire 18, an amplified signal can be output. 2C shows one of the plurality of
substrates 11 and the semiconductor element 12 and the semiconductor element 12.
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[0057]
Finally, a shield cap is sealed on each surface of the plurality of substrates 11 so as to cover the
semiconductor element 12. Note that instead of the plurality of substrates 11, one substrate 11
may be used in which the wiring 20, the first elastic body 14, and the electrode lands 19 are
separated in a plurality. In this case, finally, one substrate 11 is separated into a plurality of
substrates 11 (not shown).
[0058]
As described above, the semiconductor device 10 as shown in FIGS. 1A and 1B can be
manufactured.
[0059]
As described above, the semiconductor device 10 according to the embodiment of the present
invention includes the substrate 11 and the semiconductor element 12, and the first elastic body
14 formed on the first main surface of the substrate 11 and the substrate 11. And a second
elastic body 13 for bonding the semiconductor element 12 to the first elastic body 14.
The first elastic body 14 is formed so as to selectively cover the first main surface of the
substrate 11 and is softer in hardness than the second elastic body 13. The second elastic body
13 is formed to adhere the substrate 11 and the semiconductor element 12 with the first elastic
body 14 interposed, and to cover a part of the side surface of the pedestal 16.
[0060]
As described above, by making the first elastic body 14 softer than the second elastic body 13, it
is possible to reduce the stress on the semiconductor element 12 after mounting, and the
deformation of the fragile diaphragm 17 is alleviated. It is possible to suppress the deterioration
of the characteristics of
[0061]
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If the elastic modulus of the first elastic body 14 is 90 MPa or less, the stress on the
semiconductor element 12 can be efficiently reduced.
Further, by setting the thickness of the first elastic body 14 to 20 to 40 μm, stress can be
reduced more efficiently. The relationship is shown in FIG.
[0062]
FIG. 3 shows the rising rate (%) of the resonant frequency due to the mounting of the
semiconductor element 12. As can be seen from FIG. 3, as the film thickness of the first elastic
body 14 is larger and the elastic modulus of the first elastic body 14 is lower, the fluctuation of
the resonance frequency is smaller. Specifically, if the film thickness of the first elastic body 14 is
20 to 40 μm and the elastic modulus of the first elastic body 14 is 90 MPa or less, the
fluctuation of the resonance frequency is reduced. In the semiconductor device 10 according to
the embodiment of the present invention, the first elastic body 14 is formed between the
semiconductor element 12 and the substrate 11, and has a sufficient volume and elastic modulus
to suppress the fluctuation of the resonance frequency. It is provided. Therefore, according to the
semiconductor device 10 according to the embodiment of the present invention, the
semiconductor element 12 with high sensitivity can be provided.
[0063]
Here, the second elastic body 13 is drawn with a nozzle along the shape of the lower surface of
the pedestal 16 on the substrate 11 (specifically, the first elastic body 14) as an adhesive. In
general, even if the thickness of the second elastic body 13 is increased or the elastic modulus is
decreased, the effect of stress absorption to the semiconductor element 12 can be obtained.
[0064]
However, as shown in FIG. 4 showing a cross section after bonding of the semiconductor element
12, since the second elastic body 13 as the adhesive contains the filler 22, the thickness of the
second elastic body 13 is increased. It is necessary to increase the thixo ratio of the second
elastic body 13 to make it difficult to flow, and to increase the thixo ratio, it is necessary to
increase the diameter of the filler 22 contained in the adhesive or to increase the content ratio of
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the filler 22 is there. Here, if the bonding surface of the diaphragm 17 in the semiconductor
element 12, that is, the pedestal 16 supporting the diaphragm 17 is in a frame shape, the second
elastic body 13 is used by using a nozzle with an inner diameter matched to the width of this
frame. You have to draw. However, since the width of the frame is narrowed along with the
miniaturization of the semiconductor element 12, the inner diameter of a smaller nozzle is
required, but in the nozzle having a small inner diameter, the content ratio of the filler 22 of the
adhesive and the diameter of the filler 22 When is larger, the nozzle is easily clogged and it
becomes difficult to draw thinly. Generally, the nozzle inner diameter should be three times
larger than the maximum diameter of the filler 22. FIG. 5 shows the relationship between the
thickness (height) of the second elastic body 13 (adhesive), the content ratio of the filler 22, and
the thixo ratio of the second elastic body 13 (adhesive).
[0065]
Further, in order to lower the elastic modulus of the second elastic body 13, it is necessary to
lower the content ratio of the filler 22. However, in this case, the thickness of the second elastic
body 13 becomes thin, and the stress from the substrate can not be sufficiently absorbed. The
relationship between the content ratio of the filler 22 and the elastic modulus of the second
elastic body 13 is shown in FIG.
[0066]
However, according to the semiconductor device 10 according to the embodiment of the present
invention, since the first elastic body 14 has a function of absorbing the substrate stress, the
second elastic body 13 has a function of fixing the semiconductor element 12 to the substrate 11
The material can be selected centering on. In addition, the first elastic body 14 efficiently absorbs
the substrate stress. Therefore, when drawing and coating the second elastic body 13 by die
bonding or the like, it is possible to use as the material of the second elastic body 13 one having
a low viscosity which does not easily clog even when a nozzle having a small inner diameter is
used. The choice of the material of 2 elastic body 13 can be expanded. As a result, it is possible to
cope with the miniaturization of the semiconductor element.
[0067]
As mentioned above, although the semiconductor device of this invention and its manufacturing
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method were demonstrated based on embodiment, this invention is not limited to this
embodiment. It is within the scope of the present invention to apply various modifications that
those skilled in the art would think within the scope of the present invention. In addition, the
components in the plurality of embodiments may be arbitrarily combined without departing from
the spirit of the invention.
[0068]
For example, in each of the plan view and the sectional view used in the above embodiment, the
corners and sides of each component are described linearly, but the corners and sides are
rounded due to manufacturing reasons. Are also included in the present invention.
[0069]
Further, all the numerals used in the above embodiment are illustrated to specifically explain the
present invention, and the present invention is not limited to the illustrated numerals.
Further, the materials of the respective constituent elements shown above are all exemplified to
specifically describe the present invention, and the present invention is not limited to the
exemplified materials.
[0070]
Further, the configuration of the semiconductor device 10 described in the above embodiment is
for illustrating the present invention specifically, and the semiconductor device 10 according to
the present invention necessarily includes all the above configurations. There is no need. In other
words, the semiconductor device 10 according to the present invention may have only the
minimum configuration that can realize the effects of the present invention.
[0071]
Further, in the above-described embodiment, the semiconductor element 12 is a MEMS
microphone element provided with the pedestal 16, the through hole 15, and the diaphragm 17.
However, not only the MEMS microphone element, the semiconductor element 12 may be a
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semiconductor element having a circuit structure, for example, a thin semiconductor element
having a thickness of 50 μm or less, or an optical element such as an LED emitting high heat.
Also for such a semiconductor element, the stress from the substrate can be efficiently absorbed
by the first elastic body, so that the same effect as the effect described in the above embodiment
can be obtained.
[0072]
INDUSTRIAL APPLICABILITY The present invention is useful for a semiconductor device, and
particularly useful for a semiconductor device provided with a MEMS microphone element.
[0073]
DESCRIPTION OF SYMBOLS 10 semiconductor device 11 substrate 12 semiconductor element
13 second elastic body 14 first elastic body 15 through hole 16 pedestal 17 diaphragm 18, 106
wire 19, 105 electrode land 20 wiring 21, 104 electrode pad 22 filler 101 MEMS microphone
element 102 mounting substrate 103 Adhesive
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