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JP2007199049

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This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
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DESCRIPTION JP2007199049
In a semiconductor device in which a semiconductor sensor chip having a diaphragm is fixed to a
substrate, the semiconductor sensor chip can be stably mounted on a circuit substrate while
achieving miniaturization without changing the size of the semiconductor sensor chip. A
substantially plate-like substrate 3 having a semiconductor sensor chip 5 fixed on an upper
surface 3a is sealed with a resin layer 21 while exposing a plurality of external connection leads
13 and mounting leads 17 to the outside. The plurality of external connection leads 13 are
electrically connected to the semiconductor sensor chip 5 and arranged in a line on the side
adjacent to the semiconductor sensor chip 5, and the mounting leads 17 are A semiconductor
device is provided, which is disposed at a position opposite to the plurality of external connection
leads 13 via the semiconductor sensor chip 5. [Selected figure] Figure 2
Semiconductor device
[0001]
The present invention relates to a semiconductor device provided with a semiconductor sensor
chip such as a sound pressure sensor chip or a pressure sensor chip.
[0002]
Conventionally, as a semiconductor device such as a silicon microphone and a pressure sensor,
there is one in which a semiconductor sensor chip provided with a thin film diaphragm for
detecting pressure fluctuation such as sound is mounted on the surface of a printed board (for
example, patent document 1)).
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1
In this type of semiconductor sensor chip, pressure fluctuations such as sound can be detected
by vibrating the diaphragm. The detection sensitivity is higher as the diaphragm is larger.
Therefore, in consideration of the detection sensitivity, it is preferable that the chip size of the
semiconductor sensor chip be large. By the way, since the semiconductor device of this type may
be mounted on a portable electronic device such as a portable telephone, the miniaturization
thereof is strongly desired. As a method for achieving miniaturization, for example, as in Patent
Document 2, it is conceivable to provide an external lead electrically connected to the
semiconductor sensor chip only on one long side of the package. Japanese Patent Application
Laid-Open No. 2004-537182 Japanese Patent Laid-Open No. 2000-349305
[0003]
However, when the semiconductor device having the configuration described in Patent Document
2 is mounted on the circuit board of the electronic device, the external leads arranged on only
one side of the package and the connection terminals of the circuit board are fixed by soldering
or the like. As a result, there is a problem that the mounting state of the semiconductor device
becomes unstable. When the method of Patent Document 2 is incorporated into the
semiconductor device described in Patent Document 1, there is a possibility that the diaphragm
may not correctly detect the above-mentioned pressure fluctuation due to the vibration when the
semiconductor device mounted on the circuit board vibrates. is there.
[0004]
An object of the present invention is to provide a semiconductor device which can be stably
mounted on a circuit board while downsizing the semiconductor sensor chip without changing
the size of the semiconductor sensor chip.
[0005]
In order to solve the above-mentioned subject, this invention proposes the following means.
According to the first aspect of the present invention, a semiconductor sensor chip which is
deformed by an applied pressure and has a diaphragm for detecting the pressure according to
the amount of deformation is fixed to the upper surface of a substantially plate-shaped substrate.
04-05-2019
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A semiconductor device in which a hollow space including the semiconductor sensor chip is
formed by covering the upper side of the substrate with a lid, and the substrate is a resin layer
while exposing a plurality of external connection leads and mounting leads to the outside. The
plurality of external connection leads are electrically connected to the semiconductor sensor
chip, and are arranged in a line on the side adjacent to the semiconductor sensor chip, and the
mounting leads are configured to be sealed. A semiconductor device is proposed, which is
disposed at a position opposite to the plurality of external connection leads via the
semiconductor sensor chip.
[0006]
When the semiconductor device according to the present invention is mounted on a circuit
board, for example, the lead for external connection and the lead for mounting may be joined to
the connection terminal of the circuit board via solder. Here, since the leads for external
connection and the leads for mounting are arranged on the opposite sides of the semiconductor
sensor chip, that is, arranged on both sides of the substrate, the semiconductor device is mounted
on the circuit substrate in a stable state. can do. Further, since the plurality of external
connection leads are arranged in a line so as to be adjacent to the semiconductor sensor chip, the
semiconductor device can be easily miniaturized without changing the size of the semiconductor
sensor chip.
[0007]
The invention according to claim 2 is the semiconductor device according to claim 1, wherein the
substrate is provided with a substantially plate-shaped stage portion sealed in the resin layer and
disposed on the lower side of the semiconductor sensor chip, The stage portion is constituted of
a lead frame having conductivity with the plurality of external connection leads and the
mounting lead, and one end portion of each external connection lead extends outward from the
lower surface of the substrate together with the stage portion. The semiconductor device is
characterized in that each external connection lead is subjected to bending so that it is exposed
and the other end of each external connection lead is exposed on the upper surface of the
substrate. ing.
[0008]
According to the semiconductor device of the present invention, since the stage portion disposed
below the semiconductor sensor chip has conductivity, electromagnetic noise that attempts to
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penetrate into the hollow space from the lower surface side of the substrate Can be cut off at the
stage section.
Further, in this semiconductor device, the external connection leads are bent so that the other
ends are arranged in the thickness direction of the substrate with respect to the stage portion
formed of the same lead frame. The gap between the other end of the connection lead and the
stage portion is increased by the amount of bending.
[0009]
However, in the above semiconductor device, the leads for external connection are arranged side
by side only on one side of the semiconductor sensor chip or the stage portion, so the abovementioned gap is also formed only on one side of the semiconductor sensor chip or the stage
portion. Therefore, the size of the stage portion can be sufficiently secured, and the entire lower
side of the semiconductor sensor chip can be easily covered by the stage portion. Further, since
the mounting leads can be arranged close to the stage portion, the semiconductor device can be
further miniaturized.
[0010]
According to a third aspect of the present invention, in the semiconductor device according to
the second aspect, the mounting lead and the stage portion are integrally formed via a
connecting lead, and the connecting lead is an inner portion of the resin layer. And a
semiconductor device characterized in that the
[0011]
According to the semiconductor device of the present invention, while the mounting lead and the
stage portion are integrally formed, the mounting lead and the stage portion are arranged
separately from each other for the portion exposed on the lower surface of the resin layer. It will
be
Therefore, when soldering one end of the external connection lead exposed from the lower
surface of the resin layer and the mounting lead to the connection terminal of the circuit board, it
is easy for the solder to move from the mounting lead to the stage portion It can be prevented. In
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addition, since the connection lead integrally formed between the mounting lead and the stage
portion is embedded in the resin layer, the stage portion and the mounting lead can be easily
prevented from peeling off from the resin layer. be able to.
[0012]
The invention according to claim 4 is to fix a semiconductor sensor chip provided with a
diaphragm which is deformed by an applied pressure and detects the pressure according to the
amount of deformation on the upper surface of a substantially plate-shaped substrate, and A
semiconductor device in which a hollow space including the semiconductor sensor chip is formed
by covering a top of the substrate with a lid, and the substrate is exposed in the hollow space and
arranged in a line on the side adjacent to the semiconductor sensor chip A plurality of internal
terminals arranged and electrically connected to the semiconductor chip, a plurality of external
terminals exposed on the lower surface of the substrate and arranged on both sides of the
substrate, and provided inside the substrate According to another aspect of the present
invention, there is provided a semiconductor device comprising a conductive wiring portion
electrically connecting a plurality of the internal terminals and at least a part of the external
terminals.
[0013]
When the semiconductor device according to the present invention is mounted on a circuit
board, for example, a plurality of external terminals may be joined to connection terminals of the
circuit board via solder.
Here, since the plurality of external terminals are arranged on both sides of the substrate, the
semiconductor device can be mounted on the circuit substrate in a stable state. Further, since the
plurality of internal terminals are arranged in a line so as to be adjacent to the semiconductor
sensor chip, the semiconductor device can be easily miniaturized without changing the size of the
semiconductor sensor chip.
[0014]
The invention according to claim 5 is the semiconductor device according to claim 4, wherein the
substrate includes a conductive lower shield layer disposed on the lower side of the
semiconductor chip, and the lower shield layer is a part of the above. A semiconductor device
characterized in that it is electrically connected to an external terminal is proposed.
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[0015]
According to the invention of claim 1, the lead for external connection and the lead for mounting
are arranged on the opposite side to each other across the semiconductor sensor chip, so that the
semiconductor device can be miniaturized while the semiconductor device is in a stable state. It
can be mounted on a substrate.
[0016]
According to the second aspect of the present invention, there is provided a semiconductor
device in which the other end portion of the external connection lead is arranged to be shifted in
the thickness direction with respect to the stage portion formed by the same lead frame
However, since the size of the stage portion is sufficiently secured and all the lower part of the
semiconductor sensor chip can be covered easily by this stage portion, electromagnetic noise
which tries to intrude into the hollow space from the lower surface of the substrate Can be
reliably cut off at the stage portion.
Further, since the mounting leads can be disposed close to the stage portion, the semiconductor
device can be further miniaturized.
[0017]
Further, according to the invention of claim 3, when the lead for external connection and the lead
for mounting are joined to the connection terminal of the circuit board through the solder, the
solder moves from the lead for mounting to the stage portion. Can be easily prevented, so that
the connection terminals of the circuit board and the mounting leads can be reliably joined by
soldering.
Furthermore, by burying the connection lead integrally formed between the mounting lead and
the stage portion inside the resin layer, it is possible to prevent the stage portion and the
mounting lead from being peeled off from the resin layer.
[0018]
According to the invention of claim 4, since the internal terminals are arranged in a line to be
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adjacent to the semiconductor sensor chip and the external terminals are arranged on both sides
of the substrate, the semiconductor device can be miniaturized while the semiconductor device is
miniaturized. Can be mounted on the circuit board in a stable state.
[0019]
According to the invention of claim 5, electromagnetic noise entering from the lower surface side
of the substrate can be blocked in the lower shield layer.
[0020]
The semiconductor device according to the first embodiment of the present invention will be
described below with reference to FIGS. 1 to 7.
The present embodiment relates to a semiconductor device for detecting a sound pressure such
as sound generated outside, and in particular to a surface mount type semiconductor device
manufactured using a lead frame.
In the present embodiment, a semiconductor device of the SON (Small Outline Non-leaded
package) type which is one of the surface mounting types will be described as an example. As
shown in FIGS. 1, 2 and 6, the semiconductor device 1 according to the present embodiment
includes a substrate 3 formed in a plate shape having a substantially rectangular shape in plan
view, a semiconductor sensor chip 5 and an amplifier disposed on the upper surface 3a of the
substrate 3. And a lid 9 disposed on the substrate 3 from above the semiconductor sensor chip 5
and the amplifier 7.
[0021]
As shown in FIGS. 2 to 6, the substrate 3 has a stage portion 11 formed in a plate shape having a
substantially rectangular shape in plan view, and a plurality of leads 13, 15, 17, 19 disposed
around the stage portion 11. A resin mold portion (resin layer) 21 is provided which integrally
fixes and seals the stage portion 11 and the leads 13, 15, 17 and 19. The stage portion 11 and
the plurality of leads 13, 15, 17, 19 are constituted by a conductive lead frame (not shown). The
stage portion 11 is exposed outward from the resin mold portion 21 so as to form the lower
surface 3 b of the flat substrate 3 together with the resin mold portion 21. The stage portion 11
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is formed in such a size that the semiconductor sensor chip 5 and the amplifier 7 disposed on the
upper surface 3 a of the substrate 3 are positioned on the stage portion 11 in plan view from the
upper surface 3 a side of the substrate 3 It is done.
[0022]
The plurality of leads 13, 15, 17, 19 are separated from the resin mold portion 21 so that at least
a part of them form the flat surface 3 b of the substrate 3 together with the resin mold portion
21 as in the stage portion 11 described above. It is arranged exposed. The plurality of leads 13,
15, 17, 19 are each formed in a substantially flat strip shape, and are formed integrally with the
lead for chip connection 13 separated from the stage portion 11 and the stage portion 11. It is
divided into a ground connection lead 15, a second ground connection lead (mounting lead) 17,
and a lid connection lead 19, and a plurality of each are formed.
[0023]
The chip connection lead 13 is for electrically connecting to the semiconductor sensor chip 5 as
shown in FIGS. 2 to 4, and in the present embodiment, in the arrangement direction of the
semiconductor sensor chip 5 and the amplifier 7. Five side surfaces 21c of the resin mold portion
21 are arranged in a line at equal intervals. Each chip connection lead 13 is formed to extend
from the side surface 21 c of the resin mold portion 21 toward the stage portion 11, one end 13
a of which protrudes slightly outside the resin mold portion 21, and the lower surface 3 b of the
substrate 3 Exposed from the outside. Further, each chip connection lead 13 is bent to form a
bent portion 13c on the way from the one end 13a to the other end 13b, and another bent
portion 13c is formed by the bent portion 13c. The end 13 b is disposed above the one end 13 a.
The other end 13b of each chip connection lead 13 is disposed and exposed substantially flush
with the upper surface 3a of the substrate 3 formed by the resin mold portion 21 described later.
The other end portions 13 b of the five chip connection leads 13 are arranged in a line on the
side adjacent to the arrangement region of the semiconductor sensor chip 5 and the amplifier 7.
[0024]
As shown in FIGS. 2, 3 and 5, two first ground connection leads 15 are formed on the side
surface 21c of the resin mold portion 21 so as to be adjacent to the plurality of chip connection
leads 13 described above. The plurality of chip connection leads 13 are arranged at equal
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intervals. Each first ground connection lead 15 has one end 15 a slightly projecting outside the
resin mold portion 21 and the other end 15 b connected to the side end of the stage 11, as with
the chip connection lead 13. It is done. The one end 15 a and the other end 15 b are exposed
outward from the lower surface 3 b of the substrate 3. Further, the first ground connection lead
15 is provided with a bent portion 15c provided between the one end 15a and the other end 15b
so as to protrude above these. The bent portion 15c is buried inside the resin mold portion 21,
and the top portion 15d thereof is disposed on substantially the same plane as the upper surface
3a of the substrate 3 like the other end 13b of the chip connection lead 13. Is exposed.
[0025]
The top portions 15 d of the first ground connection leads 15 are arranged in a line on the side
adjacent to the arrangement region of the semiconductor sensor chip 5 and the amplifier 7
together with the other end 13 b of the chip connection leads 13. That is, the length obtained by
arranging the top 15 d of the first ground connection lead 15 and the other end 13 b of the chip
connection lead 13 is shorter than one side in the longitudinal direction of the arrangement
region of the semiconductor sensor chip 5 and the amplifier 7 It has become. Note that one first
ground connection lead 15 located on the chip connection lead 13 side is integrally formed with
the adjacent chip connection lead 13 at one end 15 a thereof, and is electrically connected
thereto. ing. That is, one chip connection lead 13 has the same potential as the stage portion 11
or the first ground connection lead 15.
[0026]
As shown in FIGS. 2 to 5, the second ground connection lead 17 is opposite to the chip
connection lead 13 and the first ground connection lead 15 via the semiconductor sensor chip 5,
the amplifier 7 and the stage portion 11. It is arranged at the side position. That is, two second
ground connection leads 17 are formed on the side surface 21 d opposite to the side surface 21 c
of the resin mold portion 21 in which the chip connection lead 13 and the first ground
connection lead 15 are disposed. ing. The two second ground connection leads 17 are disposed
inside the length of the chip connection lead 13 and the first ground connection lead 15
arranged.
[0027]
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9
Each second ground connection lead 17 is integrally formed with the stage portion 11 via the
connection lead 23. The connection lead 23 is formed by bending the connection lead 23 so as to
protrude above the second ground connection lead 17 and the stage portion 11, and the inside of
the resin mold portion 21 is formed. It is buried in That is, while the second ground connection
leads 17 and the stage portion 11 are integrally formed, the second ground connection leads 17
and the stage portion 11 are exposed in the portion exposed on the lower surface 3 b of the resin
mold portion 21. Are spaced apart from one another.
[0028]
The lid connection leads 19 are provided one by one on a pair of side surfaces 21 e orthogonal to
the pair of side surfaces 21 c and 21 d of the resin mold portion 21 described above in plan view
as shown in FIGS. The one end portion 19 a is projected to the outside of the resin mold portion
21. Further, these two lid connection leads 19 are respectively connected to both ends of the
stage portion 11 in the longitudinal direction, and the whole is exposed outward from the lower
surface 3 b of the substrate 3.
[0029]
The resin mold portion 21 is formed in a substantially rectangular plate shape in plan view so as
to form the upper surface 3a and the lower surface 3b of the substrate 3 as shown in FIGS.
Further, the resin mold portion 21 is formed with a substantially annular protrusion 21f
projecting upward from the peripheral edge of the upper surface 3a, and the recess 21g is
defined on the upper surface 3a side of the resin mold portion 21 by the protrusion 21f. It will be
done. A pair of protrusions 21 h protruding from the side surface 21 e is formed on both sides of
each side surface 21 e of the resin mold portion 21 in which the lid connection lead 19 is
disposed so as to protrude. The pair of protrusions 21 h Recesses 21i for accommodating the lid
connection leads 19 are formed.
[0030]
The semiconductor sensor chip 5 is a so-called sound pressure sensor chip that converts sound
into an electrical signal. That is, the semiconductor sensor chip 5 includes the diaphragm 5 a that
vibrates in accordance with pressure fluctuation such as sound from the outer space located
outside the semiconductor device 1. The diaphragm 5 a is configured to vibrate in the thickness
04-05-2019
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direction of the semiconductor sensor chip 5. In addition, a bridge resistance circuit (not shown)
is formed on the upper surface side of the diaphragm 5a, and the deformation of the diaphragm
5a is detected as a change in electrical resistance, and this is converted into pressure to detect
sound pressure. An electrical signal can be output according to the magnitude of the sound
pressure.
[0031]
The semiconductor sensor chip 5 is adhesively fixed to the upper surface 3a of the resin mold
portion 21 via the adhesive paste B1. Thus, a hollow portion S1 is formed between the
diaphragm 5a of the semiconductor sensor chip 5 and the upper surface 3a of the resin mold
portion 21. In the state where the semiconductor sensor chip 5 is fixed as described above, the
hollow portion S1 is sealed outward. The semiconductor sensor chip 5 is electrically connected to
an amplifier 7 described later by a plurality of (four in the illustrated example) wires 25.
[0032]
The amplifier 7 plays a role of amplifying an electric signal output from the semiconductor
sensor chip 5 and is fixed to the upper surface 3 a of the resin mold portion 21 through the
adhesive paste B 2 in the same manner as the semiconductor sensor chip 5. There is. The
amplifier 7 is electrically connected to one end 13 a of the chip connection lead 13 by a plurality
of (four in the illustrated example) wires 27. That is, the semiconductor sensor chip 5 is
electrically connected to the chip connection lead 13 through the amplifier 7.
[0033]
The lid 9 is formed of a conductive material such as copper, for example, as shown in FIGS. 1 and
4 to 6, and is a substantially rectangular flat top plate disposed opposite to the top surface 3 a of
the substrate 3. It includes a portion 9a and a side wall portion 9b hanging down while being
connected to the side end of the top plate portion 9a, and is formed in a substantially plate shape
with the opening side directed downward. The top plate portion 9 a is formed to abut on the
upper end surface of the substantially annular protrusion 21 f formed on the resin mold portion
21, and covers the opening of the recess 21 g of the resin mold portion 21 to cover the
semiconductor sensor chip 5 and A hollow space S2 including the amplifier 7 is formed. The top
plate 9a is formed with an opening 9c penetrating in the thickness direction, and the hollow
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space S2 communicates with the outer space located outside the semiconductor device 1 through
the opening 9c. It will be.
[0034]
The side wall portion 9 b is formed over the entire periphery of the top plate portion 9 a, and is
configured to cover the protrusion 21 f from the side surfaces 21 c, 21 d, 21 e of the resin mold
portion 21. On the side wall portions 9 b located at both ends of the semiconductor sensor chip 5
and the amplifier 7 in the arrangement direction, electromagnetic shielding terminals 29 further
extended from the tip are integrally formed. The electromagnetic shield terminal 29 is bent
toward the outside of the lid with respect to the side wall portion 9 b, and in a state where the lid
9 is disposed above the substrate 3, it is overlapped and disposed on the lid connecting lead 19.
It is supposed to be Then, the electromagnetic shielding terminal 29 is fixed to the lid connecting
lead 19 by welding, soldering or the like in a state of being in contact with the lid connecting lead
19.
[0035]
That is, the lid 9 is fixed to the substrate 3 by fixing the lid connecting lead 19 and the
electromagnetic shielding terminal 29 and is electrically connected to the stage portion 11 via
the electromagnetic shielding terminal 29. become. That is, the lid 9 and the stage portion 11
have the same potential. In the side wall portion 9b, the portion where the electromagnetic shield
terminal 29 is formed is formed separately from the other portion of the side wall portion 9b,
and is accommodated in the recess 21i of the resin mold portion 21. ing.
[0036]
The method of manufacturing the semiconductor device 1 configured as described above will be
described below. When manufacturing the semiconductor device 1 of the present embodiment,
first, a metal thin plate made of copper or the like is subjected to press processing or etching
processing, and the stage portion 11 and the chip connection leads 13 disposed around the stage
portion 11 are produced. A lead frame in which the first ground connection lead 15, the second
ground connection lead 17 and the lid connection lead 19 are integrally connected is formed.
The other end 13 b of the chip connection lead 13 and the stage portion 11 are formed adjacent
to each other. Then, the lead 13 for chip connection is bent at the same time as or after the
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formation of the lead frame, so that the other end 13 b of the lead 13 for chip connection is
thicker than the stage portion 11. It will be arranged by being shifted in the direction. At this
time, as shown in FIGS. 3 and 4, the gap between the other end 13b of the chip connection lead
13 and the stage portion 11 is increased by the amount of the bending process.
[0037]
At the same time as or after the formation of the lead frame, the first ground connection lead 15
and the connection lead 23 are subjected to bending so that the bent portion 15 c and the
connection lead 23 can be made to the stage 11. Thus, the lead frame is disposed so as to
protrude in the thickness direction of the lead frame. The projecting direction is the same as the
projecting direction of the one end 13 a of the chip connection lead 13. The bending process of
the first ground connection lead 15 and the connection lead 23 is performed simultaneously with
or before or after the bending process of the chip connection lead 13. Thereafter, the lead frame
is sealed by the resin mold portion 21 using a mold (not shown) for forming a resin mold portion,
and the chip connection lead 13, the first ground connection lead 15, and the second ground
connection are used. The substrate 3 is formed by cutting the leads 17 and the lid connection
leads 19 individually.
[0038]
After the formation of the substrate 3, the semiconductor sensor chip 5 and the amplifier 7 are
fixed to the upper surface 3a of the substrate 3 via the adhesive pastes B1 and B2, and the
semiconductor sensor chip 5 and the amplifier 7 are electrically connected by the wire 25 by
wire bonding. At the same time, the amplifier 7 and the other end 13 b of the chip connection
lead 13 are electrically connected by the wire 27. Finally, as shown in FIGS. 1 and 7, the lid 9
covers the opening of the recess 21g of the resin mold portion 21 and the electromagnetic shield
terminal 29 of the lid 9 is welded or soldered to the lead 19 for lid connection. The
semiconductor device 1 is completed by adhering to the above.
[0039]
When the lid 9 is attached, the portion of the side wall 9b on which the electromagnetic shield
terminal 29 is formed is guided by the projection 21h of the resin mold 21, and the inside of the
recess 21i of the resin mold 21 is formed. Will be housed in That is, positioning of the lid 9 with
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respect to the substrate 3 can be easily performed. When mounting the semiconductor device 1
manufactured as described above on a circuit board (not shown), for example, the lead 13 for
chip connection and the leads 15 and 17 for ground connection are used as connection terminals
of the circuit board via solder. It suffices to bond.
[0040]
According to the semiconductor device 1, the chip connection lead 13 and the second ground
connection lead 17 are disposed on the opposite sides of the semiconductor sensor chip 5, that
is, disposed on both sides of the substrate 3. Therefore, the semiconductor device 1 can be
mounted on the circuit board in a stable state. Further, the chip connection lead 13 and the first
ground connection lead 15 exposed on the upper surface 3 a of the substrate 3 are adjacent to
the long side of the substantially rectangular arrangement region in plan view where the
semiconductor sensor chip 5 and the amplifier 7 are arranged. Thus, the semiconductor device 1
can be easily miniaturized without changing the sizes of the semiconductor sensor chip 5 and the
amplifier 7 because they are arranged in a line.
[0041]
In addition, since the chip connection leads 13 in which the other end 13b is shifted in the
thickness direction with respect to the stage portion 11 are arranged in a line only on one side of
the semiconductor sensor chip 5 or the stage portion 11, manufacturing The gap between the
other end 13b of the chip connection lead 13 and the stage 11 formed by bending the chip
connection lead 13 is also formed only on one side of the semiconductor sensor chip 5 or the
stage 11 It will be. Therefore, the size of the stage portion 11 can be secured sufficiently, and the
lower portion of the semiconductor sensor chip 5 and the amplifier 7 can be easily covered by
the stage portion 11. Further, since the second ground connection lead 17 can be disposed closer
to the stage portion 11 than the above-described gap, the semiconductor device 1 can be further
miniaturized.
[0042]
Furthermore, since the stage portion 11 is electrically connected to the lid 9 having conductivity,
when mounting the semiconductor device 1 on a circuit board, the circuit board whose ground
connection leads 15 and 17 have a reference potential is used. The lid 9 and the stage 11 are
electrically connected to the ground terminal, so that electromagnetic noise is introduced into the
hollow space S2 from the upper surface 3a, the lower surface 3b and the side surfaces 21c to
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21e of the resin mold portion 21. Can be shut off reliably.
[0043]
In addition, the second ground connection lead 17 and the stage portion 11 are separated from
each other by filling the connection lead 23 connecting the second ground connection lead 17
and the stage portion 11 into the inside of the resin mold portion 21. Since the second ground
connection lead 17 is soldered to the connection terminal of the circuit board in order to be
exposed outward from the lower surface 3b of the resin mold portion 21 in the state, the solder
is exposed from the second ground connection lead 17 to the stage. The movement toward the
part 11 can be easily prevented.
Therefore, the connection terminal of the circuit board and the second ground connection lead
17 can be reliably joined by soldering. Further, by burying the connection lead 23 inside the
resin mold portion 21, it is possible to prevent the stage portion 11 and the second ground
connection lead 17 from being peeled off from the resin mold portion 21.
[0044]
In the above-described embodiment, the connection lead 23 is bent to project upward from the
second ground connection lead 17 and the stage portion 11. However, the present invention is
not limited to this. It may be buried inside the resin mold portion 21. That is, the connection lead
23 may be embedded in the resin mold portion 21 by subjecting the connection lead 23 to a half
etching process.
[0045]
In addition, although the second ground connection lead 17 is integrally formed on the stage
portion 11 via the connection lead 23, the present invention is not limited to this. For example,
the second ground connection lead 17 is formed separately from the stage portion 11 That is, it
may play a role only for mounting the semiconductor device 1 on a circuit board. Also in this
configuration, it is preferable that the connection leads 23 embedded inside the resin mold
portion 21 be formed so as to be connected to the stage portion 11 and the second ground
connection lead 17, respectively. By configuring as described above, it is possible to easily
04-05-2019
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prevent the stage portion 11 and the second ground connection lead 17 from being peeled off
from the resin mold portion 21.
[0046]
Furthermore, although the stage portion 11 is exposed outward from the resin mold portion 21
so as to form the lower surface 3b of the flat substrate 3 together with the resin mold portion 21,
the present invention is not limited thereto. It may be disposed below the semiconductor sensor
chip 5 and the amplifier 7. That is, the stage portion 11 may be buried inside the resin mold
portion 21. Further, although the electromagnetic shield terminal 29 and the lid connection lead
19 are fixed to each other, the present invention is not limited thereto, and at least the lid 9 and
the stage portion 11 may be electrically connected. .
[0047]
Furthermore, although the configuration in which the semiconductor sensor chip 5 and the
amplifier 7 are arranged on the upper surface 3a of the substrate 3 has been described in the
above embodiment, the present invention is not limited thereto. You can also In this
configuration, the chip connection leads 13 and the first ground connection leads 15 may be
arranged in a line so as to be adjacent to one side of the substantially rectangular semiconductor
sensor chip 5.
[0048]
Next, a second embodiment according to the present invention will be described with reference
to FIG. 8 to FIG. In this embodiment, the same parts as those of the semiconductor device 31 of
the first embodiment are indicated by the same reference numerals and the explanation thereof
is omitted. As shown in FIGS. 8 to 11, the semiconductor device 31 according to this embodiment
includes a substrate 33 formed in a substantially plate shape, and a semiconductor sensor chip 5
and an amplifier 7 disposed so as to overlap on the surface 33 a side of the substrate 33. And a
lid 39 disposed so as to overlap the semiconductor sensor chip 5 and the amplifier 7 from above.
[0049]
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The substrate 33 is formed in a plate shape having a substantially rectangular shape in plan
view, and a plurality of grooves 41, 41,... Opened in the surface 33a and the back surface 33c of
the substrate 33 are recessed from the side surface 33b in the side surface 33b. It is formed.
Further, in the substrate 33, a recess 43 which is recessed from the surface 33a is formed. The
semiconductor sensor chip 5 and the amplifier 7 are arranged on the bottom surface (upper
surface) 43a of the recess 43, and on one side of the recess 43 in the arrangement direction of
the semiconductor sensor chip 5 and the amplifier 7, the bottom surface 43a The protruding step
portion 45 is formed in the arrangement direction. Between the surface 33 a of the substrate 33
and the bottom surface 43 a of the recess 43 is formed in a step-like manner by the step portion
45.
[0050]
The substrate 33 is a so-called multilayer wiring substrate made of ceramic, and a plurality of
external connection wiring portions 47 and 47 for electrically connecting the semiconductor
sensor chip 5 and the amplifier 7 to the mounting substrate on which the semiconductor device
31 is mounted. , ... has. Each external connection wiring portion 47 is formed so as to be exposed
on the upper surface 45 a of the stepped portion 45 and electrically connected to the amplifier 7,
and is formed so as to be exposed on the back surface (lower surface) 33 c of the substrate 33.
An external terminal 51 for electrical connection and a conductive wiring portion 53 formed
inside the substrate 33 to electrically connect the internal terminal 49 and the external terminal
51 individually are provided.
[0051]
The five internal terminals 49, 49,... Are arranged in a line in the arrangement direction of the
semiconductor sensor chip 5 and the amplifier 7 in a state of being closer to the amplifier 7 side
in the upper surface 45a of the stepped portion 45. The plurality of external terminals 51 are
arranged on both sides of the substrate 33 along the arrangement direction of the semiconductor
sensor chip 5 and the amplifier 7. In this embodiment, the ground connection internal terminal
49A is electrically connected to the ground connection conductive wiring portion 53A disposed
closer to the semiconductor sensor chip 5 on the upper surface 45a of the stepped portion 45.
The ground connection conductive wiring portion 53A penetrates from the upper surface 45a of
the stepped portion 45 to the back surface 33c of the substrate 33 and is electrically connected
to the ground connection external terminal 51A.
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[0052]
Further, inside the substrate 33, a conductive lower shield layer 54 disposed below the
semiconductor sensor chip 5 and the amplifier 7 is provided. The lower shield layer 54 is formed
over substantially the entire surface of the substrate 33. Here, the substantially entire surface of
the substrate 33 may be at least a region including the semiconductor sensor chip 5, the
amplifier 7 and the wires 57 electrically connecting these to each other, but as in the illustrated
example, the bottom surface 43 a of the substrate 33 It may be an area including the whole.
Further, the lower shield layer 54 may be disposed so as to overlap in the thickness direction of
the conductive wiring portion 53 and the substrate 33 as in the illustrated example, or may be
formed in the same layer as the conductive wiring portion 53. I do not care. When the conductive
wiring portion 53 and the lower shield layer 54 are formed in the same layer, the conductive
wiring portion 53 may be disposed around the lower shield layer 54. The lower shield layer 54
has a substantially annular connection pad 55 formed on the surface 33 a of the substrate 33 via
the conductor portions 56 and 56 extending in the thickness direction of the substrate 33, a
conductive wiring portion 53 A for ground connection, The ground connection external terminal
(a part of the external terminals) 51A is electrically connected. That is, in this embodiment, the
lower shield layer 54 and the ground connection external terminal 51A are integrally formed.
[0053]
Here, a part of the connection pad 55 reaches one of the plurality of grooves 41, 41,... Formed in
the side surface 33b of the substrate 33 (groove 41A). A conducting wire portion 57 is formed
on the inner surface of the groove 41A so as to reach the ground connection external terminal
51A. Therefore, the connection pad 55 is electrically connected to the ground connection
external terminal 51A through the conductor portion 57 in addition to the conductor portion 56.
The external connection wiring portion 47, the connection pad 55, the lower shield layer 54 and
the conductor portion 57 formed in the groove 41A are made of silver powder or copper powder
or tungsten powder as a main component (silver powder or copper powder or tungsten powder
And a binder (for example, a mixture of acrylic resin) is used for screen printing or the like.
Further, the above-described materials are plated with nickel and gold on the internal terminals
49 and the external terminals 51 exposed on the upper surface 45 a of the stepped portion 45
and the back surface 33 c of the substrate 33.
[0054]
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The semiconductor sensor chip 5 and the amplifier 7 are fixed to the bottom surface 43a of the
substrate 33 in the same manner as in the first embodiment, and are electrically connected to
each other by a plurality of (four in the illustrated example) wires 57. . Also, the amplifier 7 is
electrically connected to the internal terminal 49 by a plurality of (five in the illustrated example)
wires 59. Thus, the semiconductor sensor chip 5 is electrically connected to the internal terminal
49 through the amplifier 7.
[0055]
The lid 39 is formed of a flat plate material having conductivity such as a copper material and
plated with nickel, and is fixed to the surface 33 a of the substrate 33 to cover the opening of the
recess 43 so as to cover the substrate 33. A hollow space S2 including the semiconductor sensor
chip 5 and the amplifier 7 is formed together with the reference numeral 33. Further, an opening
39a penetrating in the thickness direction is formed in the lid 39, and the hollow space S2
communicates with the outside through the opening 39a. Furthermore, the lid 39 is in contact
with the electrically conductive connection pad 55 so as to be electrically connected. That is, the
lid 39 is electrically connected to the ground connection external terminal 51A through the
connection pad 55, the conductor portion 56, and the conductor portion 57 of the groove 41A.
[0056]
When manufacturing the semiconductor device 31 configured as described above, first, the
substrate 33 is manufactured. Although the substrates 33 may be manufactured individually, for
example, they may be divided individually after being manufactured in a state in which a large
number of the substrates 33 are connected. In this case, it is easy to form a plurality of through
holes penetrating in the thickness direction between the substrates 33 adjacent to each other,
and divide the through holes into individual substrates 33 so as to divide them. The conductor
portion 57 for electrically connecting the connection pad 55 to the ground connection external
terminal 51A can be easily formed on the inner surface of the groove 41A. Further, by forming
the through holes described above, the strength between the continuously formed substrates 33
can be weakened, so that it is possible to easily divide the substrates into individual substrates
only by bending at the dividing portions. it can.
[0057]
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Next, the semiconductor sensor chip 5 and the amplifier 7 are fixed to the bottom surface 43a of
the substrate 33 via an adhesive paste (not shown), and the semiconductor sensor chip 5 and the
amplifier 7 are electrically connected by the wire bonding by the wire bonding And the internal
terminal 49 are electrically connected by the wire 59. Finally, the lid 39 is fixed to the surface 33
a of the substrate 33 to complete the manufacture of the semiconductor device 31. Note that, for
fixing the lid 39, for example, an adhesive having conductivity may be used. When the
semiconductor device 31 manufactured as described above is mounted on a circuit board, for
example, as in the first embodiment, the plurality of external terminals 51 may be joined to the
connection terminals of the circuit board via solder.
[0058]
According to the semiconductor device 31, as in the first embodiment, since the plurality of
external terminals 51 are arranged on both sides of the substrate 33, the semiconductor device
31 can be mounted on the circuit substrate in a stable state. . In addition, since the plurality of
internal terminals 49 exposed to the hollow space S2 are arranged in line so as to be adjacent to
the semiconductor sensor chip 5 and the amplifier 7, the sizes of the semiconductor sensor chip
5 and the amplifier 7 are not changed. The semiconductor device 31 can be easily miniaturized.
[0059]
Furthermore, since the lower shield layer 54 of the substrate 33 is electrically connected to the
lid 39 having conductivity, a circuit that uses the ground connection external terminal 51A as a
reference potential when the semiconductor device 31 is mounted on a circuit board. By
electrically connecting to the ground terminal of the substrate, electromagnetic noise, which
tends to intrude into the hollow space S2 from the front surface 33a and the back surface 33c
side of the substrate 33, is reliably blocked by the lid 39 and the lower shield layer 54. can do. In
addition, if the gap dimension between the lid 39 and the lower shield layer 54 in the thickness
direction of the substrate 33 is sufficiently smaller than the wavelength of the electromagnetic
wave causing interference with the semiconductor sensor chip 5 or the amplifier 7, it will be
described in the first embodiment. Even if there is no structure corresponding to the side wall
portion 9b of the lid 9, it is possible to reliably shut off the noise that tries to enter the hollow
space S2 from the side surface 33b side of the substrate 33.
04-05-2019
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[0060]
However, in the case where the above-mentioned gap is larger than the wavelength of the
electromagnetic wave which interferes, the configuration of the lid is the same as in the first
embodiment, and a flat plate-like top plate portion disposed on the surface 33a of the substrate
33; A side wall portion extending from the entire periphery substantially in the thickness
direction of the substrate 33 and provided adjacent to the side surface 33 b of the substrate 33 is
provided, and the side wall portion hollow space from the side surface 33 b side of the substrate
33 It is preferable to block the noise that is going to intrude into S2.
[0061]
In the second embodiment, the internal terminal 49 is formed on the upper surface 45a of the
step 45. However, the present invention is not limited to this. For example, the bottom 43a of the
recess 43 may be formed without forming the step 45. It does not matter if it is formed directly.
Furthermore, although the external terminal 51 electrically connected to the internal terminal 49
and the lower shield layer 54 is formed on the back surface 33 c of the substrate 33, for
example, external terminals not electrically connected to the internal terminal 49 and the lower
shield layer 54 are separately It does not matter if it is formed. Further, although the substrate
33 is made of ceramic, the present invention is not limited to this. For example, the substrate 33
may be made of glass epoxy resin.
[0062]
The embodiment of the present invention has been described in detail with reference to the
drawings, but the specific configuration is not limited to this embodiment, and design changes
and the like within the scope of the present invention are also included.
[0063]
1 is a schematic perspective view showing a semiconductor device according to a first
embodiment of the present invention.
FIG. 2 is a schematic plan view showing a state of the semiconductor device of FIG. 1 as viewed
from the top surface of a substrate. FIG. 2 is a schematic plan view showing the semiconductor
04-05-2019
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device of FIG. 1 as viewed from the lower surface of the substrate. It is AA arrow sectional
drawing of FIG.2 and FIG.3. It is a BB arrow sectional view of FIG.2 and FIG.3. It is CC arrow
sectional drawing of FIG.2 and FIG.3. FIG. 2 is a schematic perspective view showing a state
before attaching to a substrate in the semiconductor device of FIG. 1; It is a schematic plan view
which shows the state which looked at the semiconductor device concerning a 2nd embodiment
of the present invention from the surface of a substrate. It is DD arrow sectional drawing of FIG.
It is EE arrow sectional drawing of FIG. It is FF arrow sectional drawing of FIG.
Explanation of sign
[0064]
1, 31: semiconductor device, 3, 33: substrate, 3a: upper surface, 3b: lower surface, 5:
semiconductor sensor chip, 5a: diaphragm, 9: lid, 11: Stage part, 13: Lead for chip connection
(lead for external connection), 13a: one end, 13b: other end, 17: second lead for ground
connection (mounting For the lead), 21 ... resin mold part (resin layer), 23 ... connection lead, 33
c ... back surface (lower surface), 43 a ... bottom surface (upper surface), 49 ... internal terminal,
51 · · · External terminal, 51A · · · · · · · · · · · · External terminal for ground connection (part of the
external terminal), 53 · · · Conductive wiring, 54 · · · lower shield layer, S2 · · · hollow space
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