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JP2007258670

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This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
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DESCRIPTION JP2007258670
A semiconductor device capable of simply forming an electromagnetic shield surrounding a
semiconductor sensor chip is provided. A semiconductor sensor chip (5) is fixed on a top surface
(3), a conductive upper lid (9) covering a top of the substrate (3) to form a hollow space (S2), and
a semiconductor sensor chip (5) A top plate portion 9a is provided with a conductive lower shield
portion 11 and the upper lid 9 is disposed to face the upper surface 3a, and extends in the
thickness direction of the substrate 3 from substantially the entire periphery of the top plate
portion 9a. And the side wall portion 9c disposed adjacent to the side surface 3c of the substrate
3, the side wall portion 9c and the lower shield portion 11 are in contact at the side surface 3c of
the substrate 3, and the lower shield portion 11 is the substrate 3 The semiconductor device 1 is
characterized in that it is connected to a shield connection terminal projecting to the outside of
the semiconductor device. [Selected figure] Figure 3
Semiconductor device
[0001]
The present invention relates to a semiconductor device provided with a semiconductor sensor
chip such as a sound pressure sensor chip.
[0002]
Conventionally, in a semiconductor device manufactured using a silicon semiconductor, for
example, a silicon microphone, a semiconductor sensor chip formed in a substantially rectangular
plate shape and having a recessed portion recessed from the front surface to the back surface is
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1
formed on a printed substrate There is one that has been implemented and configured.
In this semiconductor device, in the semiconductor sensor chip, the portion thinned by the
concave portion is, for example, a diaphragm (movable electrode) provided with a bridge
resistance circuit, and displacement or strain is applied to the diaphragm when pressure such as
sound pressure is applied. The displacement is generated, and it is possible for the bridge
resistance circuit to capture this displacement as a change in electrical resistance and to detect
pressure based on the change in electrical resistance according to the magnitude of the
displacement.
[0003]
In addition, in this type of semiconductor device, a cover (lid) is disposed on the surface (upper
surface) of the printed circuit board, and the semiconductor sensor chip is accommodated in the
space defined by the cover. The cover is provided with an opening for communicating the inside
of the space with the outside, and it is possible to introduce fluctuating pressure such as sound
pressure generated outside through the opening into the space to reach the semiconductor
sensor chip There is. Furthermore, the cover is provided with a conductive layer on the inner
surface, and it is possible to block electromagnetic noise, which is going to enter the space
through the portion other than the opening, with the electromagnetic shield of the conductive
layer. (For example, refer to Patent Document 1 and Patent Document 2). Therefore, it is
preferable to reduce the area where the semiconductor sensor chip is not covered by the
conductive layer, that is, the area that allows noise penetration into the space. Japanese Patent
Publication No. 2004-537182 U.S. Patent No. 6,781,231
[0004]
However, in the above-described semiconductor device, when the semiconductor device is
mounted on a circuit board of, for example, a cellular phone, a device for electrically connecting
the conductive layer of the cover and the circuit board is required.
[0005]
An object of the present invention is to provide a semiconductor device capable of easily forming
an electromagnetic shield in view of the above circumstances.
[0006]
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2
In order to solve the above-mentioned subject, this invention proposes the following means.
The invention according to claim 1 is a semiconductor device having a semiconductor sensor
chip provided with a diaphragm that is deformed by an applied pressure and detects the pressure
according to the amount of deformation, and the semiconductor sensor chip is fixed on the upper
surface A conductive upper cover which covers the upper side of the substrate to form a hollow
space, and a conductive lower shield portion which is disposed under the semiconductor sensor
chip, the upper cover and the upper cover The semiconductor device is characterized in that the
lower shield portion is electrically connected to each other, and at least one of the upper lid and
the lower shield portion is connected to a shield connection terminal exposed to the outside of
the substrate. doing.
[0007]
According to a second aspect of the present invention, in the semiconductor device according to
the first aspect, the upper lid is provided from the top plate portion disposed to face the upper
surface, and substantially the entire periphery of the top plate portion. According to another
aspect of the present invention, there is provided a semiconductor device comprising: a side wall
portion extending in a thickness direction of a substrate and disposed adjacent to a side surface
of the substrate.
[0008]
When the semiconductor device according to these inventions is mounted on a circuit board, the
upper lid and the lower shield having conductivity can be obtained simply by electrically
connecting the shield connection terminals projecting to the outside of the substrate to the
connection terminals of the circuit board. Since the portion can be electrically connected to the
ground pattern of the circuit board, it is possible to form an electromagnetic shield that blocks
electromagnetic noise that attempts to enter the hollow space.
In particular, since the semiconductor sensor chip is covered in the thickness direction of the
substrate by the top plate portion and the lower shield portion and surrounded from the side of
the substrate by the side wall portion, the semiconductor sensor chip is not covered by the upper
lid and the lower shield portion. It is possible to reduce a portion, that is, a region that allows
noise to enter the hollow space.
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Therefore, the shieldability of the electromagnetic shield can be easily improved.
[0009]
The invention according to claim 3 is the semiconductor device according to claim 2, wherein the
side wall portion of the upper lid and the lower shield portion are in contact with each other on
the side surface of the substrate. The device is proposed.
[0010]
The invention according to claim 4 is the semiconductor device according to any one of claims 1
to 3, wherein the side wall portion is adhered to the side surface of the substrate through an
adhesive. The device is proposed.
According to the semiconductor device of the present invention, since the adhesive for fixing the
upper lid to the substrate is not applied to the upper surface side of the substrate, the adhesive
can be prevented from leaking into the hollow space. .
[0011]
The invention according to claim 5 is the semiconductor device according to any one of claims 1
to 4, characterized in that the lower shield portion is provided with a lower lid disposed on the
lower surface of the substrate. A semiconductor device is proposed. According to the
semiconductor device of the present invention, the electromagnetic shield that covers the lower
side of the semiconductor sensor chip can be formed more simply by simply attaching the lower
lid to the lower surface of the substrate.
[0012]
Further, in the semiconductor device of this type, the semiconductor sensor chip is disposed such
that the diaphragm faces the upper surface of the substrate, so a cavity is formed between the
diaphragm and the upper surface of the substrate. Here, when the volume of the hollow portion
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is small, the air spring constant of the hollow portion becomes large and the diaphragm becomes
difficult to vibrate. Therefore, the displacement amount of the diaphragm becomes small and the
pressure fluctuation can be detected accurately. It disappears. Therefore, it is preferable to form
a hole in the resin layer which is recessed from the upper surface of the substrate opposed to the
diaphragm to increase the volume of the hollow portion. The hollow portion needs to be sealed
from the outer space of the semiconductor device. Here, in the semiconductor device having the
above configuration, since the lower surface of the substrate is covered by the lower lid, even if
the above-described hole is penetrated from the upper surface to the lower surface of the
substrate, the hole is in the outer space of the semiconductor device. There is no communication,
i.e. the cavity can be easily expanded.
[0013]
The invention according to claim 6 is the semiconductor device according to any one of claims 1
to 5, wherein the lower shield portion is a substantially plate-like stage sealed in a resin layer
constituting the substrate. A semiconductor device comprising: a stage, the stage including an
extension projecting outward from the side surface of the resin layer, the extension contacting
the side wall; ing.
[0014]
The invention according to claim 7 proposes the semiconductor device according to claim 6,
wherein a part of the stage portion forms the upper surface of the substrate.
[0015]
The invention according to claim 8 is the semiconductor device according to any one of claims 1
to 7, wherein the connection terminal for shield is integrally formed with the upper lid or the
lower shield portion. We propose a semiconductor device characterized by
[0016]
The invention according to claim 9 is the semiconductor device according to any one of claims 1
to 8, wherein both sides of the semiconductor chip are electrically connected to the
semiconductor chip and from the side of the substrate. A semiconductor device is proposed in
which a plurality of protruding leads are arranged side by side in a row.
[0017]
The invention according to claim 10 proposes the semiconductor device according to any one of
claims 1 to 9, wherein the lower shield part is formed over substantially the entire surface of the
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substrate. .
[0018]
According to the invention of claim 1 and claim 2, since the side wall portion of the upper lid is
disposed adjacent to substantially the entire side surface of the substrate, the upper lid for the
substrate is attached when the upper lid is attached to the substrate It is easy to position the
body.
Further, since the upper lid and the lower shield are electrically connected to each other in a
state where the upper lid is attached, the above-described electromagnetic shield can be easily
configured without any trouble.
[0019]
According to the invention of claim 3, since the upper lid and the lower shield are configured to
be in contact with each other on the side surface of the substrate, the above-described
electromagnetic waves can be obtained only by attaching the upper lid and the lower shield to
the substrate. It is possible to configure the shield more easily.
[0020]
Further, according to the invention of claim 4, since the adhesive can be prevented from leaking
into the hollow space, it is possible to prevent the volume of the hollow space and the shape of
the hollow space from being changed based on the adhesive. It is possible to prevent adverse
effects on the acoustic characteristics of the diaphragm of the semiconductor sensor chip with
changes.
[0021]
Further, according to the invention of claim 5, by disposing the lower lid having conductivity on
the lower surface of the substrate, it is possible to form the electromagnetic shield covering the
lower side of the semiconductor sensor chip more simply, and the semiconductor It is possible to
easily expand the volume of the cavity formed on the lower side of the sensor chip.
[0022]
Further, according to the invention of the sixth and seventh aspects, the electromagnetic shield
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6
which covers the upper side, the lower side and the side of the semiconductor sensor chip simply
by bringing the side wall portion of the upper lid body into contact with the extending portion of
the stage portion. It can be formed more simply.
[0023]
According to the seventh aspect of the present invention, since the upper surface of the substrate
on which the semiconductor sensor chip is to be installed can be easily formed flat, the
semiconductor sensor chip can be easily installed on the upper surface of the substrate .
In addition, when the lower shield portion includes both the stage portion on which the
semiconductor sensor chip is disposed and the lower lid, the hole portion formed in the resin
layer can be formed larger than the size of the semiconductor sensor chip.
That is, by forming a through hole in the stage portion facing the diaphragm and smaller than
the semiconductor sensor chip and communicating with the hole of the resin layer, the
installation surface of the semiconductor sensor chip can be secured. The hole portion of the
resin layer can be formed larger than the through hole of the stage portion.
Therefore, the volume of the hollow portion can be further expanded.
[0024]
According to the eighth aspect of the present invention, the electromagnetic shield can be formed
more easily by integrally forming the upper lid or the following shield portion and the shield
connection terminal.
[0025]
Further, according to the invention of claim 9, the leads are not arranged on the side surfaces of
the substrate positioned at both ends in the arranging direction of the plurality of leads, so the
upper lid and the lower shield are formed on the side surfaces of the substrate not arranged with
leads. The parts can be in contact with each other.
05-05-2019
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That is, the contact area between the side wall portion of the upper lid and the lower shield
portion can be expanded over the entire side surface of the substrate where the leads are not
disposed.
From the above, the area surrounding the semiconductor sensor chip can be further expanded by
the upper lid and the lower shield portion, and the area allowing noise infiltration into the hollow
space can be further reduced. Can be further improved.
[0026]
Further, according to the invention of claim 10, substantially the entire lower side of the hollow
space is covered by the lower shield portion, so that the area which allows noise to enter the
hollow space can be further reduced. Further, the shieldability of the electromagnetic shield can
be improved.
[0027]
The semiconductor device according to the first embodiment of the present invention will be
described below with reference to FIGS. 1 to 3.
The present embodiment relates to a semiconductor device for detecting an acoustic pressure
such as an acoustic signal generated outside, and in particular, here is a SOP (Small Outline
package) type semiconductor device among surface-mounted semiconductor devices
manufactured using a lead frame. The embodiment will be described.
As shown in FIGS. 1 to 3, the semiconductor device 1 according to the present embodiment
includes a substrate 3 formed in a plate shape having a substantially rectangular shape in plan
view, a semiconductor sensor chip 5 and an amplifier 7 disposed on the upper surface 3 a of the
substrate 3. And an upper cover 9 disposed on the substrate 3 from above the semiconductor
sensor chip 5 and the amplifier 7, and a substantially plate shape disposed below the
semiconductor sensor chip 5 and the amplifier 7 to form the upper surface 3 a of the substrate 3.
And a stage portion (lower shield portion) 11 of FIG.
[0028]
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The substrate 3 has a plurality of leads 13 and 15 disposed on both sides of the stage 11, and a
resin mold portion (resin layer) 19 for integrally fixing and sealing the stage 11 and the leads 13
and 15, and Is equipped.
The plurality of leads 13 and 15 are each formed in a substantially flat strip shape, and are
arranged at equal intervals (three in the illustrated example) along the arrangement direction of
the semiconductor sensor chip 5 and the amplifier 7 .
One end portions 13 a and 15 a of the leads 13 and 15 are arranged adjacent to the stage
portion 11 so as to form the upper surface 3 a of the flat substrate 3 together with the resin
mold portion 19.
Further, the other end portions 13 b and 15 b of the leads 13 and 15 are disposed so as to
protrude outward of the substrate 3 from the side surface 3 b of the substrate 3 extending in the
arrangement direction of the plurality of leads 13 and 15. When the semiconductor device 1 is
mounted on a circuit board (not shown), the leads 13 and 15 play a role as external connection
terminals soldered to connection terminals of the circuit board.
[0029]
The plurality of leads 13 and 15 described above are divided into a chip connection lead 13
separated from the stage portion 11 and a ground connection lead (shield connection terminal)
15 integrally formed with the stage portion 11. . The chip connection leads 13 are for electrically
connecting to the semiconductor sensor chip 5 and the amplifier 7, and in the present
embodiment, a plurality (five in the illustrated example) are formed. Further, the ground
connection lead 15 is connected to the ground pattern of the circuit board on which the
semiconductor device 1 is mounted, and one lead 15 is disposed adjacent to the plurality of chip
connection leads 13 described above.
[0030]
The stage portion 11 is formed of, for example, a conductive material such as a copper material,
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9
and is formed over substantially the entire surface of the substrate 3 below the semiconductor
sensor chip 5 and the amplifier 7. Here, the substantially entire surface of the substrate 3 may be
a region including at least the semiconductor sensor chip 5, the amplifier 7 and the wires 21
electrically connecting these to each other as in the illustrated example, for example, the upper
surface 3 a of the substrate 3 It may be an area including the whole of Further, both ends of the
stage portion 11 extending in the arrangement direction of the leads 13 and 15 protrude
outward from the side surface 3 c of the substrate 3 orthogonal to the arrangement direction of
the leads 13 and 15. The projecting portions form the extending portions 11 a and 11 b of the
stage portion 11. The above-described leads 13 and 15 are not disposed on the side surface 3c of
the substrate 3 from which the extension portions 11a and 11b protrude. Moreover, the
projection length of the extension parts 11a and 11b which protrude from the side 3c of the
board | substrate 3 is about 1 mm or less. The stage portion 11, the chip connection lead 13 and
the ground connection lead 15 configured as described above are formed by the same lead
frame.
[0031]
The resin mold portion 19 is formed in a plate shape having a substantially rectangular shape in
plan view so as to form the upper surface 3 a and the lower surface 3 d of the substrate 3.
Further, in the resin mold portion 19, a substantially annular protrusion 19 a protruding upward
from the upper surface 3 a is formed on the peripheral edge of the upper surface 3 a of the
substrate 3. The protrusion 19a is formed such that its width gradually decreases toward the tip
end side in the protrusion direction, and the recess 19b is defined on the upper surface 3a side of
the resin mold portion 19 by the protrusion 19a. become. Further, in the projection 19a, the
middle portions 11c, 13c and 15c of the stage portion 11, the chip connection lead 13 and the
ground connection lead 15 are sealed. The middle portion 11c of the stage portion 11 indicates a
portion located between the arrangement portion of the semiconductor sensor chip 5 and the
amplifier 7 and the extension portions 11a and 11b.
[0032]
The semiconductor sensor chip 5 is a so-called sound pressure sensor chip that converts sound
into an electrical signal. That is, the semiconductor sensor chip 5 includes the diaphragm 5 a that
vibrates in accordance with pressure fluctuation such as sound from the outer space located
outside the semiconductor device 1. The diaphragm 5 a is configured to vibrate in the thickness
direction of the semiconductor sensor chip 5. Then, when the diaphragm 5a vibrates due to the
sound pressure, the semiconductor sensor chip 5 captures the deformation of the diaphragm 5a
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10
as a change in electrostatic capacitance or a change in electrical resistance, and takes out the
change in capacitance or resistance as an electrical signal. Is configured as.
[0033]
For example, when the capacitance change is taken out as an electric signal, the semiconductor
sensor chip 5 is configured as a condenser microphone provided with a fixed electrode (not
shown) disposed opposite to the diaphragm 5a. Then, a change in the distance between the
diaphragm 5a and the fixed electrode can be captured as a change in electrostatic capacitance,
and an electrical signal can be output according to the change. Also, for example, when the
resistance change is extracted as an electric signal, the deformation of the diaphragm 5a itself
can be regarded as a change in electric resistance, and an electric signal corresponding to the
change can be output.
[0034]
The semiconductor sensor chip 5 is adhesively fixed to the stage portion 11 forming the upper
surface 3 a of the substrate 3 via an adhesive paste C 1 made of an insulating material so that the
diaphragm 5 a faces the upper surface 3 a of the substrate 3. Thus, a hollow portion S1 is formed
between the diaphragm 5a of the semiconductor sensor chip 5 and the upper surface 3a of the
substrate 3. In the state where the semiconductor sensor chip 5 is fixed as described above, the
hollow portion S1 is sealed outward. The semiconductor sensor chip 5 is electrically connected to
an amplifier 7 described later and one end 13 a of a chip connection lead 13 by wires 21 and 23.
[0035]
The amplifier 7 plays a role of amplifying an electric signal output from the semiconductor
sensor chip 5 and the like, and is fixed to the upper surface 3 a of the resin mold portion 19 via
the adhesive paste C 2 similarly to the semiconductor sensor chip 5. There is. Further, the
amplifier 7 is electrically connected to one end 13 a of the chip connection lead 13 by a wire 25.
[0036]
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11
The upper lid 9 is made of, for example, a conductive material such as a copper material, and is
provided with a substantially rectangular flat top plate portion 9a disposed to face the upper
surface 3a of the substrate 3 and a side end of the top plate portion 9a. It has side wall parts 9b
and 9c which hang down while being connected, and is formed in a substantially plate shape
with the opening side facing downward. The top plate portion 9 a is formed to abut on the upper
end surface of the substantially annular protrusion 19 a formed in the resin mold portion 19,
covers the opening of the recess 19 b of the resin mold portion 19, and A hollow space S2
including the amplifier 7 is formed. The top plate 9a is formed with an opening 9d penetrating in
the thickness direction, and the hollow space S2 communicates with an outer space located
outside the semiconductor device 1 through the opening 9d. It will be.
[0037]
The side wall portions 9b and 9c are formed over substantially the entire periphery of the top
plate portion 9a, and are configured to cover the protrusion 19a from the side surfaces 3b and
3c side of the resin mold portion 19. The pair of first side wall portions 9 b disposed on both
sides of the stage portion 11 is bonded to the side surface 3 b of the resin mold portion 19 from
which the leads 13 and 15 protrude via an adhesive (not shown). In addition, the pair of second
side wall portions 9c located at both ends in the arrangement direction of the semiconductor
sensor chip 5 and the amplifier 7 are on the side surface 3c side of the resin mold portion 19
from which the extension portions 11a and 11b of the stage portion 11 project. It is disposed
and engaged with the extension portions 11a and 11b. That is, the tip of the second side wall
portion 9c is bent inward, and the extension portions 11a and 11b of the stage portion 11 are
sandwiched between the bent portions of the pair of second side wall portions 9c. As a result, the
second side wall portion 9c and the extension portions 11a and 11b come into contact with each
other, whereby the upper lid 9 and the stage portion 11 are electrically connected.
[0038]
The method of manufacturing the semiconductor device 1 configured as described above will be
described below. When manufacturing the semiconductor device 1 of the present embodiment,
first, a metal thin plate made of copper or the like is subjected to press processing or etching
processing to obtain the stage portion 11, the chip connection lead 13 and the ground
connection lead 15 An integrally connected lead frame (not shown) is formed. Specifically, the
chip connection lead 13 and the ground connection lead 15 are connected at the other end
portions 13b and 15b. Next, the lead frame is sealed by the resin mold portion 19 using a mold
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12
(not shown) for forming a resin mold portion, and the chip connection lead 13 and the ground
connection lead 15 are individually cut, whereby the substrate 3 is formed. Will be formed.
[0039]
After completion of the formation of the substrate 3, the semiconductor sensor chip 5 and the
amplifier 7 are fixed to the stage portion 11 forming the upper surface 3a of the substrate 3 via
the adhesive pastes C1 and C2 and the semiconductor sensor chip 5 and the amplifier 7 are fixed
by wire bonding. The semiconductor sensor chip 5 and the amplifier 7 are electrically connected
to the one end 13 a of the chip connection lead 13 by the wires 23 and 25 while being
electrically connected by the wire 21. Finally, the upper lid 9 is fixed to the substrate 3 so that
the top plate 9 a covers the opening of the recess 19 b of the resin mold 19, thereby completing
the manufacture of the semiconductor device 1. The upper lid 9 is fixed by adhesion between the
pair of first side wall portions 9 b and one side surface 3 b of the resin mold portion 19, and the
other of the pair of second side wall portions 9 c and the resin mold portion 19. By engagement
with the side surface 3c.
[0040]
When mounting the semiconductor device 1 manufactured as described above on a circuit board
(not shown), one end 13a, 15a of the lead 13 for chip connection and the lead 15 for ground
connection is made of a circuit board by soldering or the like. It may be electrically connected to
the connection terminal.
[0041]
As described above, the semiconductor sensor chip 5 and the amplifier 7 are covered in the
thickness direction of the substrate 3 by the top plate portion 9 a and the stage portion 11 of the
upper lid 9 and the side walls 9 b and 9 c of the upper lid 9 It will be surrounded from the side of
3.
Further, the upper lid 9 is in contact with the stage portion 11 to be electrically connected, and
the stage portion 11 is integrally formed with the ground connection lead 15. Therefore, when
the semiconductor device 1 is mounted on a circuit board (not shown), the semiconductor sensor
chip 5 and the amplifier 7 are electrically connected only by electrically connecting the ground
connection lead 15 to the ground pattern of the circuit board by soldering or the like. Can be
05-05-2019
13
electrically connected to the ground pattern of the circuit board with the upper lid 9 and the
stage portion 11 that encloses, so that an electromagnetic shield that blocks electromagnetic
noise that attempts to enter the hollow space S2 can be formed. it can.
[0042]
And since this electromagnetic shield encloses the semiconductor sensor chip 5 and the amplifier
7 by the upper cover 9 and the stage 11 as described above, the hollow space S2 is not covered
by the upper cover 9 and the stage 11 That is, it is possible to reduce the area that allows noise
to enter the hollow space S2. Therefore, the shieldability of the electromagnetic shield can be
easily improved. Specifically, since the plurality of leads 13 and 15 are not disposed on the side
surface 3c of the substrate 3 which brings the upper lid 9 and the stage 11 into contact with
each other, the side wall 9c of the upper lid 9 and the stage The contact area with 11 can be
expanded over the entire side 3c of the substrate 3 where the leads 13, 15 are not disposed.
Therefore, the region covering the semiconductor sensor chip 5 and the amplifier 7 can be
further expanded by the upper lid 9 and the stage portion 11, and the region that allows noise
infiltration into the hollow space S2 can be particularly reduced. Can dramatically improve the
shielding properties of The improvement of the shielding property of the electromagnetic shield
described above is particularly effective when the semiconductor sensor chip 5 is configured of a
condenser microphone that is high in impedance and susceptible to electromagnetic induction.
[0043]
Further, since the side wall portions 9 b and 9 c of the upper lid 9 are disposed adjacent to
substantially the entire side surfaces 3 b and 3 c of the substrate 3, when the upper lid 9 is
attached to the substrate 3, the upper lid for the substrate 3 is Positioning of the body 9 can be
easily performed. Furthermore, since the second side wall portion 9c of the upper lid 9 and the
extension portions 11a and 11b of the stage portion 11 are in contact with each other at the side
surface 3c of the substrate 3, the upper lid 9 is attached to the substrate 3 It is possible to easily
configure the electromagnetic shield with little effort by merely attaching it.
[0044]
Further, an adhesive for fixing the upper lid 9 to the substrate 3 may be applied to the side
surface 3 b of the substrate 3. That is, since the adhesive is not applied to the upper surface side
05-05-2019
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of the substrate 3, the adhesive can be reliably prevented from leaking into the hollow space S2.
Therefore, it is possible to prevent the volume of the hollow space S2 and the shape of the hollow
space S2 from changing based on the adhesive, and to prevent the adverse effect on the acoustic
characteristics of the diaphragm 5a of the semiconductor sensor chip 5 along with the change.
Furthermore, since the upper surface 3a of the substrate 3 on which the semiconductor sensor
chip 5 and the amplifier 7 are placed is formed by the stage portion 11, the upper surface 3a can
be easily formed flat, and the semiconductor sensor chip 5 and the amplifier 7 can be easily
formed. It becomes possible to install on the upper surface 3 a of the substrate 3.
[0045]
In the first embodiment described above, the upper lid 9 is fixed to the substrate 3 by bonding
between the pair of first side wall portions 9 b and the side surface 3 b of the resin mold portion
19, and the pair of first side walls 9 b. Although this is performed by the engagement between
the side wall portion 9c of 2 and the other side surface 3c of the resin mold portion 19, the
invention is not limited thereto, and it may be performed by at least one of the adhesion and the
engagement. Furthermore, although the stage portion 11 is disposed to form the upper surface 3
a of the substrate 3, the present invention is not limited to this, and may be disposed at least
below the semiconductor sensor chip 5 and the amplifier 7. That is, the stage portion 11 may be
embedded in the resin mold portion 19, for example. The plurality of leads 13 and 15 are
projected outward from the side surface 3b of the substrate 3. However, the present invention is
not limited to this. It is sufficient if at least the substrate 3 is exposed. It may be exposed to the
outside.
[0046]
Next, a second embodiment according to the present invention will be described with reference
to FIGS. 4 to 6. The semiconductor device according to the second embodiment is mainly
different from the semiconductor device according to the first embodiment only in that the
semiconductor sensor chip 5 is covered by another one than the stage portion 11. Here, only the
difference will be mainly described, and the same parts as the constituent elements of the
semiconductor device 1 of the first embodiment will be assigned the same reference numerals,
and the description thereof will be omitted.
[0047]
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15
As shown in FIGS. 4 to 6, the semiconductor device 31 according to this embodiment has a lower
lid (lower shield portion) on the lower side of the semiconductor sensor chip 5 and the amplifier
7 instead of the stage portion 11 of the first embodiment. 33) are arranged. The lower lid 33 is
formed of, for example, a conductive material such as a copper material, and is connected to a
flat plate portion 33a substantially flat in plan view disposed on the entire lower surface 3d of
the substrate 3 and a side end of the flat plate portion 33a. In addition, side walls 33 b and 33 c
are provided to project above the substrate 3. That is, the lower lid 33 is formed in a
substantially plate shape with its opening side facing upward. The flat plate portion 33 a of the
lower lid 33 is formed over substantially the entire surface of the substrate 3 below the
semiconductor sensor chip 5 and the amplifier 7. Here, the substantially entire surface of the
substrate 3 may be at least a region including the semiconductor sensor chip 5, the amplifier 7
and the wires 21 electrically connecting these to each other, but as in the illustrated example, the
upper surface 3 a of the substrate 3 It may be an area including the whole.
[0048]
The side wall portions 33b and 33c of the lower lid 33 are bonded to the side surfaces 3b and 3c
of the substrate 3 via an adhesive (not shown), whereby the lower lid 33 is fixed to the substrate
3 . Further, the tips of the pair of side wall portions 33c disposed on the side surface 3c of the
substrate 3 on which the leads 13 and 15 are not disposed are in contact with the tip of the
second side wall portion 9c of the upper lid 9 The body 9 and the lower lid 33 are electrically
connected.
[0049]
Further, a bent terminal 9 e which is bent to the outside of the substrate 3 is formed at a part of
the tip of the first side wall 9 b constituting the upper lid 9. The bent terminals 9 e are arranged
so as to overlap in the thickness direction of the ground connection lead 15 and the substrate 3
in a state where the upper lid 9 is attached to the substrate 3. As a result, the upper lid 9 and the
ground connection lead 15 are electrically connected. The bent terminal 9e may be joined to the
ground connection lead 15 by soldering or the like.
[0050]
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Furthermore, the resin mold portion 19 is formed with a hole 19c which is recessed from the
upper surface 3a and penetrates to the lower surface 3d, and the semiconductor sensor chip 5 is
adhesively fixed to the upper surface 3a of the substrate 3 so as to cover the hole 19c. ing. In this
state, the diaphragm 5a of the semiconductor sensor chip 5 and the flat plate portion 33a of the
lower lid 33 are disposed to face each other through the hole 19c. Therefore, the hollow portion
S1 is defined by the semiconductor sensor chip 5, the hole 19c and the flat portion 33a. The
hollow portion S1 is sealed outward. In the semiconductor device 31 having this configuration,
since the semiconductor sensor chip 5 and the amplifier 7 are fixed to the resin mold portion 19
forming the upper surface 3a of the substrate 3, even if the adhesive pastes C1 and C2 have
conductivity. I do not care.
[0051]
According to the semiconductor device 31, as in the first embodiment, the semiconductor sensor
chip 5 and the amplifier 7 are covered in the thickness direction of the substrate 3 by the upper
lid 9 and the lower lid 33 and the side of the substrate 3 Since the upper lid 9 and the lower lid
33 do not cover the hollow space S2, that is, it is possible to reduce the area that allows noise to
enter the hollow space S2. Therefore, the shieldability of the electromagnetic shield can be easily
improved. Specifically, since the plurality of leads 13 and 15 are not disposed on the side surface
3 c of the substrate 3 which brings the upper lid 9 and the lower lid 33 into contact with each
other, the upper lid 9 and the lower lid 33 The contact area can be expanded over the entire side
surface 3c of the substrate 3 where the leads 13, 15 are not disposed. Therefore, the region
surrounding the semiconductor sensor chip 5 and the amplifier 7 can be further expanded by the
upper lid 9 and the stage portion 11, and the region which allows noise infiltration into the
hollow space S2 can be particularly reduced.
[0052]
Furthermore, since the side wall portions 33b and 33c of the lower lid 33 are also disposed
adjacent to substantially the entire side surfaces 3b and 3c of the substrate 3, when the upper lid
9 is attached to the substrate 3, the lower lid for the substrate 3 Positioning of the body 33 can
be easily performed. Further, only by attaching the upper lid 9 and the lower lid 33 to the
substrate 3, the second sidewall 9 c of the upper lid 9 and the second sidewall 33 c of the lower
lid 33 are mutually separated at the side surface 3 c of the substrate 3. It is also possible to easily
construct the electromagnetic shield without taking time and effort.
05-05-2019
17
[0053]
Furthermore, by arranging the lower lid 33 on the lower surface 3 d of the substrate 3, the hole
19 c recessed from the upper surface 3 a of the substrate 3 can be penetrated to the lower
surface 3 d of the substrate 3. It can be easily planned. That is, when the volume of the hollow
portion S1 is small, the air spring constant of the hollow portion S1 becomes large and the
diaphragm 5a of the semiconductor sensor chip 5 becomes difficult to vibrate, so the
displacement amount of the diaphragm 5a becomes small and pressure fluctuation Can not be
detected with high accuracy, but the provision of the lower lid 33 can increase the volume of the
cavity S1. The hollow portion S1 needs to be sealed from the outer space of the semiconductor
device 31. However, in the semiconductor device 31 having the above configuration, the lower
surface 3d of the substrate 3 is covered by the lower lid 33. Even if the hole 19 c is penetrated
from the upper surface 3 a to the lower surface 3 d of the substrate 3, the hole 19 c does not
communicate with the outer space of the semiconductor device 31.
[0054]
In the second embodiment described above, the lower lid 33 is fixed by bonding the side wall
33b to the side surfaces 3b and 3c of the substrate 3. However, the present invention is not
limited to this. It may be fixed by sandwiching the substrate 3 by 33b, or may be fixed by
adhering the flat plate portion 33a to the lower surface 3d of the substrate 3. Here, when the
lower lid 33 is fixed by adhesion, an adhesive is disposed between the lower surface 3 d of the
substrate 3 and the lower lid 33, so the amount of adhesive and the application area should be
set appropriately. Thus, a minute gap can be formed between the lower surface 3 d of the
substrate 3 and the lower lid 33. As a result, the air tightness of the hollow portion S1 can be
reduced, and the internal pressure of the hollow portion S1 can be set substantially equal to the
atmospheric pressure. That is, since the internal pressure of the cavity S1 increases or decreases
in accordance with the atmospheric pressure change and the temperature change around the
semiconductor device 31, the diaphragm 5a is not deformed based on the atmospheric pressure
change and the temperature change.
[0055]
However, the minute gap described above allows gas flow based on the static pressure difference
between the cavity S1 and the outer space outside the semiconductor device 31, and allows
passage of gas based on pressure fluctuation acting on the diaphragm 5a. It should be large
05-05-2019
18
enough to prevent it. Here, the static pressure indicates the pressure of the cavity portion S1 and
the outer space in the state where the gas does not flow and is at rest. The change in static
pressure is such that the change in pressure per unit time is relatively small. For example, the
heating / cooling of the hollow portion S1, the generation of outgassing during the reflow for
bonding the semiconductor sensor chip 5 to the substrate 3, etc. In the static pressure change,
the static pressure change of the hollow portion S1 associated with and the static pressure
change of the outer space based on the elevation difference and the like are included. The
pressure fluctuation indicates a dynamic pressure change due to sound or the like, and includes a
pressure change per unit time larger than the above-described static pressure change. That is,
the static pressure change of the hollow portion S1 and the static pressure change of the outer
space described above are not included in this pressure fluctuation.
[0056]
Furthermore, in the above embodiment, the bending terminal 9e of the upper lid 9 is in contact
with the ground connection lead 15. However, the present invention is not limited thereto, and at
least one of the upper lid 9 or the lower lid 33 is It should just be electrically connected. That is,
for example, a bent terminal similar to the upper lid 9 may be formed on the lower lid 33 and
brought into contact with the ground connection lead 15.
[0057]
Next, a third embodiment according to the present invention will be described with reference to
FIGS. 7 to 9. The semiconductor device of the third embodiment is mainly configured by adding
the stage portion 11 of the first embodiment to the semiconductor device 31 of the second
embodiment. Therefore, the same components as those of the semiconductor devices 1 and 31 of
the two embodiments described above are denoted by the same reference numerals, and the
description thereof is omitted.
[0058]
As shown in FIG. 7 to FIG. 9, the semiconductor device 41 according to this embodiment includes
the stage portion 11 forming the upper surface 3 a of the substrate 3 as in the first embodiment,
and the lower lid as in the second embodiment. It has 33. The stage portion 11 and the lower
cover 33 constitute a lower shield portion covering the lower side of the semiconductor sensor
05-05-2019
19
chip 5 and the amplifier 7. In the semiconductor device 41 having this configuration, the tips of
the second side wall portions 9c and 33c of the upper lid 9 and the lower lid 33 are extended
portions 11a and 11b of the stage portion 11 projecting from the side surface 3c of the substrate
3 They are in contact with each other. Thereby, the upper lid 9 and the lower lid 33 are
electrically connected to the stage portion 11. In the stage portion 11, a through hole 11d
communicating with the hole 19c similar to that of the second embodiment is formed. That is,
the hollow portion S1 is defined by the semiconductor sensor chip 5, the through hole 11d of the
stage portion 11, the hole portion 19c of the resin mold portion 19, and the flat portion 33a of
the lower lid 33.
[0059]
According to the semiconductor device 41, the same effects as those of the two embodiments
described above are obtained. In addition, the hole 19 c formed in the resin mold 19 can be
formed larger than the size of the semiconductor sensor chip 5. That is, by forming the through
hole 11 d communicating with the hole 19 c in the stage 11, the mounting surface of the
semiconductor sensor chip 5 can be secured, and the hole 19 c of the resin mold 19 can be
removed from the stage 11. It can be formed larger than the through hole 11 d of Therefore, it is
possible to further increase the volume of the hollow portion S1.
[0060]
Next, a fourth embodiment according to the present invention will be described with reference to
FIG. 10 to FIG. The semiconductor device of the fourth embodiment is different from the
semiconductor device 31 of the second embodiment in the configuration of the upper lid. Here,
only the configuration of the upper lid will be described, and the same parts as the constituent
elements of the semiconductor device 31 of the second embodiment will be assigned the same
reference numerals and descriptions thereof will be omitted.
[0061]
As shown in FIGS. 10 to 12, the upper lid 53 of the semiconductor device 51 according to this
embodiment is formed of, for example, a conductive material such as a copper material, similarly
to the upper lid 9 of the second embodiment. A top plate portion 53a substantially in the shape
of a rectangular flat plate opposed to the upper surface 3a of the substrate 3 and side wall
05-05-2019
20
portions 53b and 53c hanging from substantially the entire periphery of the top plate portion
53a; Is formed in a substantially dish shape with the In the top plate portion 53a, an opening 53d
is formed to allow the hollow space S2 to communicate with the outer space of the
semiconductor device 51. Furthermore, the pair of first side wall portions 53b facing each other
is disposed on one side surface 3b of the substrate 3 on which the leads 13 are disposed, and the
pair of second side wall portions 53c facing each other are the leads 13 It is arranged on the
other side 3c of the substrate 3 which is not arranged.
[0062]
A ground connection lead (shield connection terminal) 55 is integrally formed on a part of the tip
of the first side wall portion 53b described above and extends outward from the side surface 3b
of the substrate 3. The ground connection lead 55 is connected to the ground pattern of the
circuit board on which the semiconductor device 51 is mounted, as the ground connection lead
15 of the other embodiments described above. In a state of being attached to the chip connection
lead 13 and disposed adjacent to the chip connection lead 13. The end of the second side wall
53c is in contact with the end of the pair of side walls 33c of the lower cover 33 as in the upper
cover 9 of the second embodiment. The lower lid 33 is electrically connected.
[0063]
According to the semiconductor device 51, the same effect as that of the second embodiment can
be obtained. Further, since the upper lid 53 and the ground connection lead 55 are integrally
formed, the electromagnetic shield can be more easily formed only by the upper lid 53 and the
lower lid 33 disposed outside the substrate 3. Can.
[0064]
Next, a fifth embodiment according to the present invention will be described with reference to
FIG. 13 to FIG. In this embodiment, the same parts as the constituent elements of the
semiconductor device of the above embodiment are indicated by the same reference numerals,
and the description thereof is omitted. As shown in FIGS. 13 to 16, a semiconductor device 71
according to this embodiment includes a substrate 73 formed in a substantially plate shape, and
a semiconductor sensor chip 5 and an amplifier 7 disposed so as to overlap on the surface 73 a
side of the substrate 73. And an upper lid 79 disposed so as to overlap the semiconductor sensor
05-05-2019
21
chip 5 and the amplifier 7 from above.
[0065]
The substrate 73 is formed in a plate shape having a substantially rectangular shape in plan
view, and a plurality of grooves 81, 81, ... opened in the surface 73a and the back surface 73c of
the substrate 73 are recessed from the side surface 73b in the side surface 73b. It is formed.
Further, in the substrate 73, a recess 83 which is recessed from the surface 73a is formed. The
semiconductor sensor chip 5 and the amplifier 7 are arranged on the bottom surface (upper
surface) 83a of the recess 83, and on one side of the recess 83 in the arrangement direction of
the semiconductor sensor chip 5 and the amplifier 7 from the bottom surface 83a. The
protruding step portion 85 is formed in the above-mentioned arrangement direction. Between
the surface 73 a of the substrate 73 and the bottom surface 83 a of the recess 83 is formed in a
step-like manner by the step portion 85.
[0066]
The substrate 73 is a so-called multilayer wiring substrate made of ceramic, and a plurality of
external connection wiring portions 87 and 87 for electrically connecting the semiconductor
sensor chip 5 and the amplifier 7 to a mounting substrate on which the semiconductor device 71
is mounted. , ... has. Each external connection wiring portion 87 is formed to be exposed on the
upper surface 85 a of the step portion 85 and electrically connected to the amplifier 7, and is
formed to be exposed to the back surface 73 c of the substrate 73 to be electrically connected to
the mounting substrate An external terminal 91 is provided, and a conductive wiring portion 93
formed inside the substrate 73 to electrically connect the internal terminal 89 and the external
terminal 91 individually.
[0067]
The five internal terminals 89, 89,... Are arranged in a line in the arrangement direction of the
semiconductor sensor chip 5 and the amplifier 7 in a state in which the upper surface 85a of the
step portion 85 is closer to the amplifier 7 side. In addition, the plurality of external terminals 91
are arranged on both sides of the substrate 73 along the arrangement direction of the
semiconductor sensor chip 5 and the amplifier 7. In this embodiment, the ground connection
internal terminal 89A is electrically connected to the ground connection conductive wiring
05-05-2019
22
portion 93A disposed closer to the semiconductor sensor chip 5 in the upper surface 85a of the
step portion 85. The ground connection conductive wiring portion 93A penetrates from the
upper surface 85a of the stepped portion 85 to the back surface 73c of the substrate 73 and is
electrically connected to the ground connection external terminal (shield connection terminal)
91A.
[0068]
Further, inside the substrate 73, a conductive lower shield layer (lower shield portion) 94
disposed below the semiconductor sensor chip 5 and the amplifier 7 is provided. The lower
shield layer 94 is formed over substantially the entire surface of the substrate 73. Here, the
substantially entire surface of the substrate 73 may be at least a region including the
semiconductor sensor chip 5, the amplifier 7 and the wires 97 electrically connecting these to
each other, but as shown in FIG. It may be an area including the whole. Further, the lower shield
layer 94 may be disposed so as to overlap in the thickness direction of the conductive wiring
portion 93 and the substrate 73 as in the illustrated example, or may be formed in the same
layer as the conductive wiring portion 93. I do not care. When the conductive wiring portion 93
and the lower shield layer 94 are formed in the same layer, the conductive wiring portion 93
may be disposed around the lower shield layer 94. The lower shield layer 94 includes a
substantially annular connection pad 95 formed on the surface 73 a of the substrate 73 via the
conductor portions 96 and 96 extending in the thickness direction of the substrate 73, a
conductive connection portion for ground connection 93 A, and It is electrically connected to the
ground connection external terminal 91A described above. That is, in this embodiment, the lower
shield layer 94 and the ground connection external terminal 91A are integrally formed.
[0069]
Here, a part of the connection pad 95 reaches one of the plurality of grooves 81, 81,... Formed in
the side surface 73b of the substrate 73 (groove 81A). The conductor portion 101 is formed on
the inner surface of the groove 81A, and reaches the ground connection external terminal 91A.
Therefore, the connection pad 95 is electrically connected to the ground connection external
terminal 91A via the conductor portion 101 in addition to the conductor portion 96. The external
connection wiring portion 87, the connection pad 95, the lower shield layer 94, and the
conductor portion 101 formed in the groove 81A are made of silver powder or copper powder or
tungsten powder as a main component (silver powder or copper powder or tungsten powder And
a binder (for example, a mixture of acrylic resin) is used for screen printing or the like. Further,
the above-described materials are plated with nickel and gold on the internal terminals 89 and
05-05-2019
23
the external terminals 91 exposed on the upper surface 85 a of the stepped portion 85 and the
back surface 73 c of the substrate 73.
[0070]
The semiconductor sensor chip 5 and the amplifier 7 are fixed to the bottom surface 83a of the
substrate 73, and are electrically connected to each other by a plurality of (four in the illustrated
example) wires 97. The amplifier 7 is electrically connected to the internal terminal 89 by a
plurality of (five in the illustrated example) wires 99. As a result, the semiconductor sensor chip 5
is electrically connected to the internal terminal 89 through the amplifier 7.
[0071]
The upper lid 79 is formed of a flat plate material having conductivity such as a copper material
and plated with nickel, and is fixed to the surface 73 a of the substrate 73 to cover the opening
of the recess 83. A hollow space S2 including the semiconductor sensor chip 5 and the amplifier
7 is formed together with the substrate 73. Further, the upper lid 79 is formed with an opening
79a penetrating in the thickness direction, and the hollow space S2 communicates with the
outside through the opening 79a. Furthermore, the upper lid 79 is in contact with the electrically
conductive connection pad 95 so as to be electrically connected. That is, the upper lid 79 is
electrically connected to the ground connection external terminal 91A through the connection
pad 95, the conducting wire portion 96, and the conducting wire portion 101 of the groove 81A.
[0072]
When manufacturing the semiconductor device 71 configured as described above, the substrate
73 is manufactured first. Although the substrates 73 may be manufactured individually, for
example, they may be divided individually after being manufactured in a state in which a large
number of the substrates 73 are connected. In this case, it is easy to form a plurality of through
holes penetrating in the thickness direction between the substrates 73 adjacent to each other,
and divide the through holes into individual substrates 73 so as to divide them. The conductive
wire portion 101 for electrically connecting the connection pad 95 to the ground connection
external terminal 91A can be easily formed on the inner surface of the groove 81A. Further, by
forming the through holes described above, the strength between the continuously formed
substrates 73 can be weakened, so that it is possible to easily divide into individual substrates
05-05-2019
24
only by bending in the division part. it can.
[0073]
Next, the semiconductor sensor chip 5 and the amplifier 7 are fixed to the bottom surface 83a of
the substrate 73 via an adhesive paste (not shown) made of a conductive material or an
insulating material, and the semiconductor sensor chip 5 and the amplifier 7 are fixed by wire
bonding. Electrical connection is made by the wire 97 and electrical connection between the
amplifier 7 and the internal terminal 89 is made by the wire 99. Finally, the upper lid 79 is fixed
to the surface 73 a of the substrate 73 to complete the manufacture of the semiconductor device
71. For fixing the upper lid 79, for example, an adhesive having conductivity may be used. When
the semiconductor device 71 manufactured as described above is mounted on a circuit board, the
plurality of external terminals 91 may be electrically connected to the connection terminals of
the circuit board by soldering or the like.
[0074]
According to the semiconductor device 71, the same effect as that of the above-described
embodiment can be obtained. That is, since the upper lid 79 and the lower shield layer 94 are
electrically connected to each other with the upper lid 79 attached to the substrate 73, only by
electrically connecting the ground connection external terminal to the ground pattern of the
circuit board, The electromagnetic shield can be easily configured without any trouble. Further,
by covering the substantially entire surface on the lower side of the hollow space S2 with the
lower shield layer 94, it is possible to further reduce the area in which noise can enter into the
hollow space S2, further improving the shielding property of the electromagnetic shield. Can be
[0075]
In the fifth embodiment, although the electromagnetic shield is formed only by the upper lid 79
and the lower shield layer 94, the gap dimension between the upper lid 79 and the lower shield
layer 94 in the thickness direction of the substrate 73. If the wavelength is sufficiently smaller
than the wavelength of the electromagnetic wave that interferes with the semiconductor sensor
chip 5 or the amplifier 7, the substrate does not have the configuration corresponding to the side
wall portions 9 b and 9 c of the upper lid 9 described in the first embodiment. Noise that tries to
enter the hollow space S2 from the side surface 73b side of 73 can also be shut off with
certainty.
05-05-2019
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[0076]
Further, in this embodiment, the plurality of internal terminals 89 are arranged in a line in the
arrangement direction of the semiconductor sensor chip 5 and the amplifier 7, but the present
invention is not limited thereto. It may be arranged side by side or around.
In this case, the plurality of internal terminals 89 may form the same step 85 as in the above
embodiment on both sides of the semiconductor sensor chip 5 and the amplifier 7 and may be
disposed on the upper surface 85 a. It may be formed directly on the bottom surface 83 a of the
recess 83 without forming the Furthermore, although the external terminal 91 electrically
connected to the internal terminal 89 and the lower shield layer 94 is formed on the back surface
73c of the substrate 73, the external terminal not electrically connected to the internal terminal
89 and the lower shield layer 94 is separately It does not matter if it is formed.
[0077]
Also, although the substrate 73 is made of ceramic, it is not limited to this, and may be made of,
for example, glass epoxy resin. Furthermore, although the lower shield layer 94 is disposed
inside the substrate 73, the present invention is not limited thereto. For example, the lower shield
layer 94 may be disposed to form the bottom surface 83a of the recess 83.
[0078]
Further, the upper lid 79 is not limited to being formed in a flat plate shape, and, for example, as
in the first embodiment, the flat top plate portion disposed on the surface 73 a of the substrate
73 It does not matter as a structure provided with the side wall part extended in the thickness
direction of the board | substrate 73, and adjacent to the side surface 73b of the board |
substrate 73, and is distribute | arranged. In this case, as in the first embodiment, when the
upper lid 79 is attached to the substrate 73, positioning of the upper lid 79 with respect to the
substrate 73 can be easily performed. Furthermore, in the case of this configuration, even if the
dimension of the gap between the upper lid 79 and the lower shield layer 94 in the thickness
direction of the substrate 73 is larger than the wavelength of electromagnetic waves causing
interference, the side wall portion of the upper lid 79 It is possible to block noise that tries to
enter the hollow space S2 from the side surface 73b side of the substrate 73.
05-05-2019
26
[0079]
When the upper lid 79 includes the top plate portion and the side wall portion, for example, the
lower shield layer 94 is exposed to the side surface 73 b of the substrate 73, and the side wall
portion of the upper lid 79 and the lower shield layer 94 are the substrate 73. The side surfaces
73b of the upper lid 79 may be in contact with each other, or the side walls of the upper lid 79
may be bonded to the side surfaces 73b of the substrate 73 with an adhesive.
[0080]
In all the embodiments described above, although the configuration in which the semiconductor
sensor chip 5 and the amplifier 7 are disposed on the upper surface 3a of the substrate 3 has
been described, the configuration is not limited thereto. For example, only the semiconductor
sensor chip 5 is disposed. It can also be applied to the configuration.
The embodiment of the present invention has been described in detail with reference to the
drawings, but the specific configuration is not limited to this embodiment, and design changes
and the like within the scope of the present invention are also included.
[0081]
FIG. 1 is a schematic plan view showing a semiconductor device according to a first embodiment
of the present invention. It is AA arrow sectional drawing of FIG. It is a BB arrow sectional
drawing of FIG. It is a schematic plan view which shows the semiconductor device concerning a
2nd embodiment of the present invention. It is DD arrow sectional drawing of FIG. It is the EE
arrow sectional drawing of FIG. It is a schematic plan view which shows the semiconductor
device concerning a 3rd embodiment of the present invention. It is FF arrow sectional drawing of
FIG. It is the GG arrow directional cross-sectional view of FIG. It is a schematic plan view which
shows the semiconductor device concerning a 4th embodiment of the present invention. It is the
HH arrow directional cross-sectional view of FIG. It is II arrow sectional drawing of FIG. It is a
schematic plan view which shows the semiconductor device concerning a 5th embodiment of the
present invention. It is JJ arrow sectional drawing of FIG. It is the KK arrow sectional drawing of
FIG. It is the LL arrow sectional drawing of FIG.
05-05-2019
27
Explanation of sign
[0082]
1, 31, 41, 51, 71: semiconductor device, 3, 73: substrate, 3a: upper surface, 3b, 3c, 73b, side
surface, 3d, lower surface, 5: semiconductor Sensor chip, 5a: diaphragm, 9, 53, 79: upper lid, 9a,
53a: top plate, 9b, 9c, 53b, 53c: sidewall, 11: stage (Lower shield portion) 11a, 11b extension
portion 13 chip connection lead 15, 55 ground connection lead (shield connection terminal) 33
lower lid Lower shield portion), 19: resin mold portion (resin layer), 83a bottom surface (upper
surface) 91A: external terminal for ground connection (connection terminal for shield) 94: lower
shield layer Lower shield part), S2 ... hollow space
05-05-2019
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