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JP2011109358

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This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
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DESCRIPTION JP2011109358
The present invention provides an electromechanical transducer capable of reducing the
parasitic capacitance of an electromechanical transducer separated by a trench and preventing
foreign matter from entering the trench, and a method of manufacturing the same. An
electromechanical transducer includes a plurality of elements 104 each having at least one cell
including first and second electrodes 108 and 107 provided facing each other across a gap, and
an outer periphery of the plurality of elements. And an outer frame 109 extending along the The
first electrode 108 of each of the plurality of elements is composed of a plurality of parts formed
by electrically separating the substrate for the element by the groove 111, and the outer frame
109 is electrically isolated from the plurality of parts by the groove 111. And a portion of the
substrate for the element around the plurality of portions separated. The plurality of first
electrodes 108 are respectively joined to the plurality of conductive portions 117 of the other
substrate 102 through the plurality of electrode connection portions 112, and the outer frame
109 has an annular shape around the plurality of electrode connection portions. It is joined to
the corresponding portion of the other substrate through the outer frame connection portion
113. [Selected figure] Figure 1
Electromechanical converter and method of manufacturing the same
[0001]
The present invention relates to an electromechanical transducer such as an ultrasonic
transducer and a method of manufacturing the same.
[0002]
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1
One form of electro-mechanical transducer is the Capacitive Micromachined Ultrasound
Transducer (CMUT).
As an example of a CMUT, the circuit substrate is electrically connected to an element substrate
having a plurality of elements including a substrate having a lower electrode, a membrane which
is a vibrating film supported by a support formed on the substrate, and an upper electrode. There
is one that is configured by connecting Here, a cavity, which is a gap, is formed between the
substrate and the membrane. The CMUT vibrates the membrane by a voltage applied between
the lower electrode and the upper electrode to emit an ultrasonic wave. Also, the membrane is
vibrated by the received ultrasonic wave, and the ultrasonic wave is detected by the change in
capacitance between the lower electrode and the upper electrode.
[0003]
Conventionally, CMUTs have been manufactured using so-called surface micromachining (surface
type) and bulk micromachining (bonding type). Also, as a wiring method, a method has been
proposed in which a plurality of membranes and cavities on a silicon substrate are used as one
element, and the silicon substrate itself is used as a lower electrode and a through wiring to
connect the elements to a circuit board (non-patent document 1). This method is described in
FIG. The element substrate 1007 includes a plurality of elements 1008, and transmits and
receives ultrasonic waves using the elements as one unit. The element 1008 includes an upper
electrode 1000, a membrane 1001, a cavity 1002, and a lower electrode 1003. In the lower
electrode, a groove 1004 is formed in order to electrically isolate (divide) adjacent elements
1008 from each other for insulation. The lower electrodes 1003 of the element substrate 1007
are connected to an ASIC substrate (circuit board) or the like by bumps 1005, respectively. In the
upper electrode 1000, the upper electrodes 1000 of a plurality of elements are connected to the
upper electrode lead-out portion 1010, and the upper electrode lead-out portion 1010 is
connected to the ASIC substrate via the upper electrode wiring 1009 and the bumps 1005. As
such, since the lower electrode 1003 is electrically separated, a signal can be taken out for each
element. In addition, in Non-Patent Document 1, PDMS (polydimethylsiloxane) 1006 is embedded
in the groove 1004 to give flexibility to the CMUT. In this way, if the groove 1004 provided for
element separation is sealed with a resin, foreign matter can be prevented from entering the
groove, which is effective in preventing dielectric breakdown between the elements 1008.
[0004]
Journal of Micro electro-mechanical Systems, Vol. 17, No. 2 pp. 446-452, APRIL. 2008
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[0005]
In the CMUT of Non-Patent Document 1, since the groove provided for element separation is
sealed with resin, the lower electrode 1003 or lower electrode 1003 and the upper electrode
wiring are lower than when the groove is a space. The parasitic capacitance between 1009 and
1009 may increase.
On the other hand, however, if the device is manufactured while maintaining the space in the
groove, foreign matter may intrude into the groove and cause dielectric breakdown.
[0006]
In view of the above problems, in the electromechanical transducer according to the present
invention, a plurality of elements each having at least one cell including first and second
electrodes provided facing each other across a gap, and the plurality of elements And an outer
frame extended along the outer periphery, and has the following features. A first electrode of
each of the plurality of elements is formed of a plurality of portions formed by electrically
separating a substrate for the element by a groove, and the outer frame is electrically connected
to the groove from the plurality of portions. And a portion of a substrate for the device around
the plurality of portions separated. Furthermore, the first electrodes respectively composed of
the plurality of portions are respectively joined to the plurality of conductive portions of another
substrate through the plurality of electrode connection portions, and the outer frame is formed of
the plurality of electrode connection portions. It is bonded to the corresponding part of the other
substrate via the surrounding annular outer frame connection.
[0007]
Further, in view of the above problems, in the method of manufacturing an electromechanical
transducer according to the present invention, a plurality of elements each including at least one
cell including first and second electrodes facing each other across a gap are provided. This is a
method of bonding another substrate to a device substrate having an outer frame extended along
the outer periphery of the device. And, the following steps are included. Forming a groove in the
element substrate and forming an outer frame and a plurality of first electrodes; Forming a
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plurality of electrode connection parts respectively connected to the plurality of first electrodes,
and an outer frame connection part extending annularly around the plurality of electrode
connection parts to be connected to the outer frame. Bonding the substrate for the element to
another substrate through the outer frame connection portion and the plurality of electrode
connection portions.
[0008]
According to the present invention, the outer frame connecting portion functions as a sealing
material of the space including the groove, and it becomes possible to seal while keeping the
inside of the groove provided for separating the element in the space. Foreign matter can be
prevented from entering the groove.
[0009]
The figure explaining the composition of CMUT of an example of the electromechanical
transducer which can apply the present invention.
FIG. 7 is a cross-sectional view illustrating the method of manufacturing the CMUT of the second
embodiment. FIG. 7 is a diagram for explaining a method of manufacturing a CMUT of
Embodiment 2. FIG. 10 is a schematic cross-sectional view showing a conventional CMUT.
[0010]
Hereinafter, embodiments of the present invention will be described. An important point in the
electromechanical transducer of the present invention and the method of manufacturing the
same is that an electrode connection portion for connection of the plurality of portions is
provided on an outer frame of a substrate for an element having a plurality of portions
electrically separated by grooves. Form an annular outer frame connection. And it joins to the
corresponding | compatible part of another board | substrate through this cyclic | annular outer
frame connection part. As the other substrate, there are a through wiring substrate (refer to the
embodiment described later) having a plurality of through wirings which are conductive portions,
and a circuit substrate for controlling an electromechanical transducer.
[0011]
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Based on the above concept, the basic form of the mechanical-electrical conversion device and
the method of manufacturing the same according to the present invention has the configuration
as described in the section for solving the problems. Based on this basic form, embodiments as
described below are possible. The electrode connection portion and the outer frame connection
portion can be made of the same conductive material, which facilitates the method of
manufacturing the electromechanical transducer. The outer frame and the second electrode
(upper substrate described later) can be electrically connected, and in this case, the outer frame
is formed of another substrate through the conductive portion of the annular outer frame
connection portion. It will be joined to the conductive part of the corresponding part. The entire
outer frame connection portion may be a conductive portion, or only a portion may be a
conductive portion for electrical connection. The grooves can be vacuum or depressurized or
filled with gas.
[0012]
Hereinafter, embodiments of an electromechanical transducer to which the present invention can
be applied and a method of manufacturing the same will be described in detail with reference to
the drawings. First Embodiment A first embodiment according to a CMUT, which is an
electromechanical transducer to which the present invention can be applied, will be described.
FIG. 1 shows this CMUT. However, the present invention is applicable not only to CMUT, but also
to an electromechanical transducer having a similar structure (a structure in which a substrate
for an element is divided by a groove to form a first electrode for each element). . For example,
the present invention can be applied to an ultrasonic transducer (a so-called piezoelectric
transducer (PMUT), a magnetic transducer (MMUT) or the like) using distortion, a magnetic field,
or light. That is, the electromechanical transducer to which the present invention can be applied
is not limited to the one in which the structure on the lower electrode 108 which is the first
electrode described later is described later.
[0013]
1 (a) is a cross-sectional view taken along the line AA 'in FIG. 1 (b), FIG. 1 (b) is a top view of the
CMUT, and FIG. 1 (c) is a line BB' in FIG. 1 (a). FIG. 1D is a top view on the side of the through
wiring board in the BB ′ cross-sectional view of FIG. 1 (a) in FIG. 1A. In order to make it easy to
understand, the top view is hatched or shaded. The CMUT according to this embodiment includes
the through wiring substrate 102 and the element substrate 103, and the through wiring
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substrate 102 is connected to the circuit substrate 101. As shown in FIG. 1A, the element
substrate 103 and the circuit substrate 101 are fixed to each other through the through wiring
substrate 102, and the circuit substrate 101 is not on the same plane (horizontal alignment) as
the element substrate 103. It is disposed under the element substrate 103.
[0014]
The element substrate 103 includes an element 104 arranged in a two-dimensional manner, and
an outer frame 109 extending along the outer periphery of the entire element 104 and
surrounding the periphery thereof. Each element 104 in FIG. 1 includes a plurality of cells
including an upper electrode 107 as a second electrode, a membrane 105, a support portion 100
of an insulator, and a lower electrode 108 as a first electrode facing the second electrode. . A
cavity 106, which is a gap, is formed between the upper electrode 107 and the lower electrode
108 of each cell. That is, in the present invention, the cell has at least a configuration including
the upper electrode 107 and the lower electrode 108 facing each other across one cavity. The
lower electrode 108 is separated for each element by forming a groove 111 in the element
substrate. In each element, the cavities 106 of the plurality of cells may be sealed independently
or in communication with each other. Thus, in the present embodiment, a plurality of cells are
electrically connected in parallel to configure the element 104. Each element 104 may include
one or more cells, and the number of cells in each element 104, the arrangement form of the
cells, the form of the cavity, etc. are free as long as the electromechanical conversion function
can be achieved. Further, in the present embodiment, as shown in FIG. 1B, the elements 104 are
arranged in four rows and four columns on the substrate for the elements, but the arrangement
method and the number of the elements are also described in the present embodiment. The
number is not limited to the above, and a desired number may be provided in a desired
arrangement. Further, the upper electrode may double as a membrane (vibration membrane).
[0015]
The element substrate 103 and the through wiring substrate 102 are mutually fixed via the
lower electrode connection portion 112 and the outer frame connection portion 113 which are
electrode connection portions, and are electrically connected. As shown in FIG. 1C, the outer
frame connection portion 113 is formed on the outer frame 109 and is formed in a closed
annular shape. Further, as shown in FIG. 1D, the outer frame connection portion 113 is formed
on the through wiring substrate 102, and also in a closed annular shape. The lower electrode
connection portion 112 and the outer frame connection portion 113 are preferably made of the
same conductive material. This is because the two connection portions 112 and 113 can be
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formed in one bonding step.
[0016]
In the through wiring board 102, a plurality of through wirings 117 which are conductive
portions penetrating from the surface on the side to be bonded to the element substrate 103 to
the surface on the circuit substrate 101 side are formed. The signal of the lower electrode 108 is
transmitted to the circuit board 101 via the lower electrode connection portion 112 and the
under bump metal 115 electrically connected thereto via the through wiring 117. Further, the
signal of the upper electrode 107 is also transmitted to the circuit board 101 via the upper
electrode lead-out portion 118, the outer frame 109, the outer frame connection portion 113, the
through wiring 117, the under bump metal 115 and the like. That is, the outer frame 109 and
the outer frame connection portion 113 play a role of upper electrode wiring that electrically
connects the upper electrode 107 and the circuit board 101. The circuit board 101 is composed
of a processing circuit (not shown) for processing a signal and an electrode pad 116 which is a
conductive portion, and the circuit board 101 and the through wiring board 102 are joined by
bumps 110.
[0017]
It is preferable that the through wiring 117 of the through wiring substrate penetrate from the
bonding surface to the element substrate to the surface on the circuit substrate side. If the wiring
of the lower electrode is formed on the bonding surface of the through wiring substrate to the
element substrate, it will overlap with the outer frame connection portion 113. The arrangement
method, the number, the diameter, and the like of the through wires 117 are not limited to those
shown in FIG. 1 and may be provided in a desired arrangement and in a desired number. As a
material of the through wiring 117, at least one kind of metal such as Al, Cr, Ti, Au, Pt, Cu, Ag, Fe,
Ni, or Co can be selected and used. The through wiring substrate 102 is formed of an insulating
material, but preferably, the relative dielectric constant is 3.8 to 10, the Young's modulus is 5
GPa or more, and the thermal expansion coefficient is three times the thermal expansion
coefficient of the element substrate 103. It is good if When the relative permittivity is 3.8 or
more and 10 or less, preferable insulation can be secured, and when the Young's modulus is 5
GPa or more, the rigidity is increased and the mechanical strength is further improved. In
addition, when the coefficient of thermal expansion is 3 times or less the coefficient of thermal
expansion of the element substrate, warpage of the electromechanical transducer due to heat
during the manufacturing process or during use can be reduced. Specifically, when the substrate
for the element, that is, the lower electrode 108 and the outer frame 109 are made of silicon
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(coefficient of thermal expansion: 2.55 to 4.33 ppm / K), the through wiring substrate 102 which
is a relay substrate is borosilicate It is preferable to use glass (coefficient of thermal expansion:
3.2 to 5.2 ppm / K).
[0018]
The groove 111 is formed from the surface on the side to be bonded to the through wiring
substrate 102 to the lower surface of the support portion 100, and the shape (shape in cross
section) is not particularly limited. Also, the groove 111 is preferably filled with vacuum or gas to
reduce parasitic capacitance. As the gas, air is preferable, and it is particularly preferable to be
filled with nitrogen and argon. This is to reduce the temporal change of the groove 111. The
thicknesses of the lower electrode connection portion 112 and the outer frame connection
portion 113 are preferably thicker in order to prevent the bonding failure due to the warpage or
distortion of the substrate. However, the thickness is preferably in consideration of the ease of
processing of the lower electrode connection portion 112 and the outer frame connection
portion 113. Specifically, the thickness is preferably 100 nm or more and 1000 nm or less, more
preferably 200 nm or more and 600 nm or less.
[0019]
The shape (cross-sectional shape) of the lower electrode connection portion 112 is not limited,
but is preferably smaller than the cross-sectional shape of the lower electrode 108 for separation
between the elements 104. Specifically, in the case of a square, the length of one side is
preferably 10 μm or more and 3000 μm or less, more preferably 100 μm or more and 2000
μm or less, and particularly preferably 1000 μm or more and 2000 μm or less. The shape of
the outer frame connection portion 113 is a closed ring (the shape may be square, ring, etc.,
variously possible) in order to prevent dust and the like from entering the groove 111 formed in
the element substrate. Is preferred. Further, in order to separate the external connection portion
113 and the portion of the element 104, the width of the outer frame connection portion 113 is
preferably equal to or less than the width of the outer frame 109. As the lower electrode
connection portion 112 and the outer frame connection portion 113 used in the present
embodiment, at least one type of metal such as Zn, Ti, Au, Ag, Cu, Sn, or Pb can be selected and
used.
[0020]
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The operation principle of the CMUT having such a structure will be described. For example,
when receiving an ultrasonic wave, the membrane 105 is displaced, and the gap between the
upper electrode 107 and the lower electrode 108 is changed. An ultrasonic image can be
obtained by the signal processing circuit of the circuit board 101 detecting and processing the
amount of change in the capacitance. Further, in the case of transmitting an ultrasonic wave, a
voltage is applied from the circuit board 101 to the upper electrode 107 or the lower electrode
108 to vibrate the membrane 105 and transmit the ultrasonic wave. The present embodiment
can be manufactured by a bonding type (bonding type) or surface type method. In the bonding
method, for example, a cavity is formed in a silicon substrate, and a membrane is formed by
bonding an SOI substrate (see Embodiment 2 described later). In the surface method, a
membrane is deposited on a sacrificial layer, and a cavity is formed later by etching the sacrificial
layer.
[0021]
According to the present embodiment, the outer frame connection portion 113 which closes the
space between the element substrate and the through wiring substrate for each aggregate of
elements (the desired number of elements) functions as a sealing material, and for separation of
the elements 104. It is possible to seal while keeping the inside of the provided groove 111 in
space. Thus, foreign matter can be prevented from entering the groove 111. Thus, the probability
of dielectric breakdown between the elements 104 can be reduced. Further, since the inside of
the groove 111 can be sealed with vacuum or gas, parasitic capacitance can be reduced as
compared with the case of filling with a resin. In addition, in the manufacturing process of the
electromechanical transducer, in particular, in the dicing process, shavings and the like can be
prevented from entering the groove 111, so that the probability of dielectric breakdown between
the elements 104 can be reduced. By the way, it is possible to omit the through wiring substrate
and directly bond the element substrate to the circuit substrate. In this case, the lower electrode
connection portion 112 and the outer frame connection portion 113 are respectively bonded to
corresponding portions (electrode pads 116 and the like) of the circuit board.
[0022]
Second Embodiment A second embodiment relates to a method of manufacturing a CMUT in
which an element substrate and a through wiring substrate are joined via an outer frame
connection portion and a lower electrode connection portion. Although FIG. 2 for explaining the
process flow of the present embodiment is shown by the section of the cross section of FIG. 1 (a)
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for the sake of explanation, the other elements are similarly manufactured.
[0023]
First, a Si substrate 208 which is a substrate for an element is prepared. Since the Si substrate
208 later becomes a lower electrode, one having a low resistivity is preferable. In the present
embodiment, a Si substrate 208 having a specific resistance of less than 0.02 Ω · cm is used. An
oxide film 221 is formed on the Si substrate 208. Then, the alignment mark 201 is formed on the
back surface of the substrate 208 by photolithography. The alignment mark 201 is formed by
etching the oxide film 221 with buffered hydrofluoric acid (BHF) using the resist pattern as a
mask. The resist is then removed using acetone and isopropyl alcohol (IPA). This state is shown
in FIG. Next, as shown in FIG. 2B, in order to form a cavity, the oxide film 221 formed for
alignment formation is removed by BHF.
[0024]
Next, in order to form a cavity, an oxide film 222 is formed by thermal oxidation. Furthermore,
on the surface of the substrate 208, a resist pattern for a cavity pattern is formed by
photolithography. Then, the oxide film 222 is etched by BHF using the resist pattern as a mask to
form a cavity 202. The Si substrate 208 preferably has a thickness of 100 μm to 625 μm. The
thickness of the oxide film 222 is preferably 2 μm or less because it is a portion where the
cavity 202 is formed. This state is shown in FIG. 2 (C). Next, in order to insulate the bottom of the
cavity 202, the Si substrate 208 is thermally oxidized again. Thereby, an oxide film 223 is formed
to a thickness of, for example, 1500 Å. In the present embodiment, the oxide film 222 and the
oxide film 223 form the support portion 100 (see FIG. 1A). This state is shown in FIG. 2 (D).
[0025]
Next, the SOI substrate 224 is bonded to form a membrane. The bonding process is as follows.
First, the device layer as the bonding surface of the SOI substrate 224 and the Si substrate 208
are subjected to plasma processing. The type of plasma is selected from N2, O2 and Ar. Next, the
Si substrate 208 and the SOI substrate 224 are aligned with buttress flats or notches. Then,
bonding is performed, for example, under the conditions of a temperature of 300 ° C. and a load
of 500 N in a vacuum chamber. The cavity 202 is formed in this step. Finally, the oxide film 203
formed on the back surface of the Si substrate 208 is etched away with BHF. This state is shown
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in FIG. 2 (E).
[0026]
Next, in order to form the outer frame connection portion and the lower electrode connection
portion, Ti / Au is deposited to a thickness of 10 nm / 500 nm on the lower electrode side of the
element substrate and the element substrate side of the through wiring substrate. Then, a Ti / Au
pattern 203 in the shape of the external connection portion and the lower electrode connection
portion is formed by using photolithography and Ti etchant and Au etchant. This step is a step of
forming a plurality of lower electrode connecting portions respectively connected to the plurality
of lower electrodes, and an outer frame connecting portion extending along the periphery of the
plurality of lower electrode connecting portions to form an annular shape and connected to the
outer frame. is there. Furthermore, in order to form a trench for element separation, Cr is formed
into a film, and a Cr pattern 204 in the shape of the outer frame 109 and the lower electrode
108 (see FIG. 1A) is photolithographically and Cr wet etched To form. This state is shown in FIG.
Next, as shown in FIG. 2G, the Si substrate 208 is dry etched using Deep-RIE to form a groove
205 for element isolation. This process is a process of forming a groove in a substrate for an
element, and forming an outer frame and a plurality of lower electrodes.
[0027]
Next, the Si substrate 208 and the through wiring substrate 206 are joined by Au-Au, and the
two substrates are joined while forming the outer frame connection portion 216 and the lower
electrode connection portion 217. By bonding the Si substrate 208 and the through wiring
substrate 206 in a vacuum atmosphere or a reduced pressure atmosphere, the inside of the
groove 205 can be sealed in a vacuum state or a reduced pressure state. FIG. 2H is a crosssectional view after bonding the through wiring substrate 206. This step is a step of bonding the
element substrate and the through wiring board through the outer frame connection portion and
the plurality of lower electrode connection portions. The through wiring substrate 206 is, for
example, a borosilicate glass substrate in which a through hole is formed in advance by sand
blasting or the like, and the through wiring 207 is embedded. At this time, alignment is
performed so that the central axis of the through wire 207 and the central axis of the element
104 (see FIG. 1A) coincide. Alignment can be performed with an accuracy of at least ± 5 μm by
using a known alignment apparatus (for example, EVG 620 manufactured by EVG).
[0028]
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Next, under bump metal is formed on the through wiring substrate 206. A metal mask on which
a pattern of under bump metal is formed is set on the entire surface of the through wiring
substrate 206, and Ti / Cu / Au is deposited by vapor deposition. As a result, as shown in FIG. 2I,
the under bump metal 209 can be formed on the through wiring board 206. Next, the support
substrate layer and the buried oxide film layer of the SOI substrate 224 are removed by etching.
For example, the support substrate layer of the SOI substrate 224 is etched away by Deep-RIE,
and the buried oxide film layer is etched away by BHF. As a result, as shown in FIG. 2J, the
membrane 210 is formed. Next, the upper electrode lead-out portion 211 is formed. Here, a
resist pattern of the upper electrode lead-out portion is formed on the surface of the membrane
210 by photolithography. Then, using this resist as a mask, the membrane 210 is etched by dry
etching using CF 4 gas or SF 6 gas. Similarly, using the resist as a mask, the support portions 222
and 223 are etched by dry etching using CF 4 gas or CHF 3 gas. This state is shown in FIG. 2 (K).
[0029]
Next, the upper electrode 212 is formed. For example, Al is vapor-deposited on the surface of the
membrane 210. Here, a resist pattern of the upper electrode is formed on the surface on which
Al is vapor-deposited by photolithography. Then, as shown in FIG. 2L, Al is wet etched using this
resist pattern as a mask.
[0030]
Next, in the state shown in FIG. 2M, the device is cut out from the substrate by dicing. The dicing
step of FIG. 2 (M) will be described with reference to FIG. FIG. 3 (a) is a top view of the substrate
in the process of FIG. 2 (M). FIG.3 (b) is a C-C 'sectional view. When the substrate is diced as
indicated by an arrow 300, the dicing blade passes the dotted line 301. At this time, the presence
of the outer frame connection portion 216 prevents cutting water from intruding into the lower
electrode connection portion 217 and the groove 205. Finally, the through wiring board 206 and
the circuit board 213 are bonded. For bonding, for example, lead-free solder is used and soldered
by reflow. A solder paste obtained by kneading the solder powder and the flux is printed on the
electrode pads 214 of the circuit board 213. Then, as shown in FIG. 2N, the electrode pads 214
of the circuit board 213 and the under bump metal 209 are aligned, and the two boards are
joined by the solder 215. This enables signal processing of transmission and reception of
ultrasonic waves.
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[0031]
As in the present embodiment, by connecting the element substrate and the through wiring
board via the closed annular outer frame connection portion, the outer frame connection portion
functions as a sealing material, and the groove for lower electrode separation is formed. It is
possible to prevent the contamination of dust. Thus, the probability of occurrence of dielectric
breakdown between elements can be reduced. In addition, since the inside of the groove can be
maintained in a vacuum or reduced pressure space state, parasitic capacitance can be reduced as
compared with the case of sealing between elements with resin. Further, in the dicing step in the
manufacturing process, since the outer frame connection portion prevents the infiltration of
cutting water and the like, mixing of shavings and the like can be prevented, and the probability
of occurrence of dielectric breakdown between elements can be reduced.
[0032]
101, 213 ... circuit board (other board), 102, 206 ... through wiring board (other board), 104 ...
element, 107, 212 ... upper electrode (second electrode), 108 ... lower electrode (first electrode)
Electrode: 109 Outer frame 111, 205: groove 112, 217: lower electrode connection portion
(electrode connection portion) 113, 216: outer frame connection portion 116, 214: electrode pad
(conductive portion) 117 , 207 ... through wiring (conductive portion) 208 ... Si substrate
(substrate for element)
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