close

Вход

Забыли?

вход по аккаунту

?

JPS4829200

код для вставкиСкачать
Patent Translate
Powered by EPO and Google
Notice
This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
complete, reliable or fit for specific purposes. Critical decisions, such as commercially relevant or
financial decisions, should not be based on machine-translation output.
DESCRIPTION JPS4829200
■ Piezoelectric conversion device 特 願 Japanese Patent Application No. 44-84534 [phase]
Application No. 44 (1969) October 21 @ inventor Okumura Hiroshi Kamon Shin city Ogata
Kamon Shin 1006 Matsushita Denshi Kogyo Co., Ltd. 0 Applicant Matsushita Denshi Kogyo Co.,
Ltd. City Oji Kamon Shin 1006 [presence] agent patent attorney Toshio Nakao 1 person outside
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side sectional view of an embodiment of a
piezoelectric transducer according to the present invention.
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a piezoelectric
transducer using a pressure sensitive semiconductor device. The mechanical energy is received
by the vibrator and the vibration output of the vibrator is supplied to the pressure sensitive
window of the pressure sensitive semiconductor element to convert the mechanical energy into
the electric energy. When the vibration output is supplied to the pressure-sensitive window
portion through the needle attached to the movable portion of the vibrator, the vibration output
can be concentrated substantially at one point, so that high sensitivity can be achieved. However,
it is very difficult in terms of mechanism to configure the mutual contact between the tip of the
needle and the pressure-sensitive window at all times, and the pressure sensitive semiconductor
element is easily damaged by the needle. According to the piezoelectric conversion device of the
present invention, a conductive particle group such as carbon powder is used for mechanical
coupling between the pressure sensitive window portion of the pressure sensitive semiconductor
element and the vibrator, and the above pressure sensitive semiconductor is obtained through
the conductive particle group. A base bias voltage is applied to the device. Therefore, when the
mechanical pressing energy is externally applied to the vibrator, the reduction in the resistance
value of the particle group acts to deepen the negative base bias, resulting in an increase in
collector current. For this reason, the pressure sensitive semiconductor device is controlled by
05-05-2019
1
the synergetic action of pressing the pressure sensitive window [111111] and deepening the
base bias voltage, and operates with high sensitivity. Next, the present invention will be described
in more detail with reference to the drawings. The container 2 closed at one end by the plate-like
vibrator 1 is filled with a conductive particle group 3 such as carbon powder, etc. For example,
the pressure sensitive window portion 5 is disposed in a relationship to receive pressure from the
particle group 3, and the base electrode 6 of the pressure sensitive semiconductor element 4 is
electrically connected to the particle group 3 directly or through a conductive piece (not shown).
There is. In the pressure sensitive semiconductor device 4 to which an appropriate base bias
voltage is applied, the collector current is increased regardless of the base bias voltage when a
mechanical pressure equal to or greater than a certain value is applied to the Schottky barrier
which is the pressure sensitive window 5. Has a characteristic of increasing the collector current
when the negative base bias is deepened while a constant pressure is applied to the pressure
sensitive window, and a PSS transistor or PSS switching element (thyristor type) manufactured by
Matsushita Electronics Co., Ltd. Etc. are known. Reference numeral 7 denotes a base voltage
supply electrode provided on the inner surface of the container 2 in contact with the particle
group 3 and connected to a base bias power supply 8. However, when a conductor is used for the
vibrator 1, this can be substituted for the electrode 1. 9 is a collector power supply, and 10.10 is
a terminal for taking out an electrical output. As is apparent from the above description,
according to the piezoelectric conversion device of the present invention, a conductive particle
group such as carbon powder is filled in a container closed at one end with a mover, and a
pressure-sensitive semiconductor device is obtained. The pressure-sensitive window portion is
disposed to receive the pressure of the conductive particle group, and the base bias voltage of
the pressure-sensitive semiconductor element is applied through the conductive particle group.
As a result, a pressure sensitive semiconductor device that converts mechanical pressure
supplied to the vibrator from the outside into electricity can be controlled by both the pressure
on the pressure sensitive window and the base voltage [111111] EndPage: 1, and high sensitivity
operation is achieved. In anticipation of the excellent effects that can be used with microphones,
etc. [111111]
05-05-2019
2
Документ
Категория
Без категории
Просмотров
0
Размер файла
9 Кб
Теги
jps4829200
1/--страниц
Пожаловаться на содержимое документа