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■ Solid Electric Signal Converter O Japanese Patent Application No. 43-10170 [Phase]
Application No. 43 (1968) Feb. 16 @ inventor Atsushi Yamashita Kamon Kasumi City Ogata
Kamon Shin 1006 Matsushita Electric Industrial Co., Ltd. 0 Applicant within the company
Matsushita Electric Industrial Co. Company Kadoma City Oji Kadoma 1006 [present] Agent
Attorney Nakao Toshio
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view of an embodiment of the
solid-state electrical signal converter of the present invention, and FIG. 2 is a frequency
characteristic diagram of the same.
Detailed Description of the Invention The present invention provides that an insulating layer is
provided between a semiconductor having a piezoelectric effect having a junction and a
semiconductor having a junction including a deep level impurity, and an electrode is taken out
from each region of each semiconductor. The present invention relates to a solid-state electrical
signal converter that is characterized. Conventionally, as a solid state electrical signal converter,
there is one using light as a conversion medium. That is, a pn junction is formed in one of the
semiconductors of GaAs or the like, where the light generated is transmitted through the GaAs
and into the other pn junction to change the electric resistance. In this case, conversion is at the
same frequency. On the other hand, the converter frequency conversion of the present invention
is also possible. The drawing shows the basic structure in cross section. 1 is a semiconductor
having a piezoelectric effect, 2 is a region divided by junction J1, 3 is a semiconductor, 4 is a
region separated by junction J2 containing a deep level impurity, 5 6 is an electrode of
semiconductor 1 and region 2 Reference numerals 1 and 8 denote electrodes of the
semiconductor 3 and the region 4, and 9 denotes an insulator interposed between the electrodes
5 and 1 of the semiconductors 1 and 3. Now, when an electric signal [111111] is added to the
semiconductor side having a piezoelectric effect, a change in the depletion layer of the junction
J1 generates an acoustic wave. This acoustic wave is formed into a transverse wave and a
longitudinal wave depending on which crystal axis of the semiconductor the junction J1 is
formed. The sound wave propagates in the width of the semiconductor and is transmitted to the
semiconductor 3 through the insulator. Then, the deep level impurity acts very sensitively to
pressure and acts as a generation-recombination center, thereby reducing the carrier lifetime and
the electrical resistance of the junction J2. Below, the Example of this invention is explained in
full detail. A CdS thin film is provided on one side of a quartz plate provided with metal
electrodes on both sides, and a Si thin film is provided on the other side. Then, in the CdS thin
film, Cu is diffused on the surface for a short time to provide an electrode. In addition, Cu thinly
diffuses to the surface for a short time, and a Mo electrode is provided. When bias is applied to
these CdS sides, sound waves are generated, and an alternating current is obtained on the Si side.
For example, in the case of a depletion tank using a CdS crystal, when operated as a longitudinal
wave transformer, the conversion loss was 10 to 20 cities in the frequency range of 30 to 300
MHz. The frequency characteristic is shown in FIG. In this case, when the sound wave is
transmitted to the piezoelectric transducer area where the deep impurity is flowered through the
insulating layer, the conversion loss becomes quite large (approximately 30 db in total).
However, the effect of isolation between human power and output is greater. In addition, when
DC bias is applied to the CdS depletion layer, the thickness of the depletion layer is changed, and
the resonance frequency is also changed.
Such a solid-state electrical signal converter of the present invention can be used as a
transformer or converter, and its industriality is that of a dog. As a semiconductor, well-known
GaAs, Ge5GaPtInSb, etc. can be used, and a junction may be P-n or a Schottky.
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