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JPS4936241

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DESCRIPTION JPS4936241
■ Pick-up cartridge ■ Japanese Patent Application No. 44-36853 ■ Application No. 44 (1969)
May 8 @ inventor Oda Fujio Kamon Shin Oshi Kamon Shin 1006 Matsushita Electric Industrial
Co., Ltd. Small Osamu Osamu Osamu Osamu-same office 0 applicant Matsushita Electric
Industrial Co. Ltd. 4 companies Kamon Shinichi Ozamon Shin 10060 agent patent attorney
Toshio Nakao 1 person outside
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing the principle of a
semiconductor deposited film element constituting a unit conversion part of a pickup cartridge
according to the present invention, and FIG. 2 is a diagram for explaining the principle of
electromechanical conversion using the same element. 3 is a sectional view of an embodiment of
the pickup cartridge according to the present invention, FIG. 4 is a partially cut perspective view
of the internal mechanism, FIG. 5 is an exploded perspective view of the same, and FIG. is there.
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a novel pickup
cartridge using the piezoresistance effect of a semiconductor deposition film formed on a flexible
insulating thin film substrate as a mechanical-electrical conversion element. Hereinafter, an
embodiment of the cartridge of the present invention will be described with reference to the
drawings. First, FIG. 1 shows the principle configuration of a semiconductor vapor deposition
film element used for the pickup cartridge of the present invention, 1 is a substrate, and
polyimide as the element. It is a film of several tens of microns in thickness which is rich in heat
resistance, insulation and very flexible like polyamide or mica. Reference numerals 2 and z
denote electrodes formed by vacuum deposition of a metal such as nickel, chromium or gold on
the substrate 1. An appropriate impurity is mixed with an appropriate semiconductor material
such as silicon, germanium, indium antimonide, etc., which has a large piezoresistance effect,
using an evaporation mask [111111] suitable to bridge between the electrodes 2 and 7 by using
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an evaporation mask [111111] In the form of a strip. Therefore, when the piezoresistive element
3 is subjected to a change in tension in the direction connecting the electrodes 2 and when it is
deformed by the entire bending stress, a change appears in the interelectrode terminal resistance
due to the mechanical strain. FIG. 2 shows the principle of the stress conversion part using the
semiconductor deposition film element having the above constitution, and 4 is an insulating base
for fixing the semiconductor deposition film element, and a recess 5 is formed in part thereof.
And the piezoresistive element 3 of the semiconductor deposition film element is positioned to be
passed through the recess 5 to form the electrode 2. z is fixed to the upper edge of the recess 5.
As a result, the piezoresistive element 3 is held under constant tension. The tension is not
particularly large, and is merely an extent that wrinkles and sags do not occur in the portion of
the membrane. Now, when the structure 6 is brought into contact with the central portion of the
semiconductor deposition film element and vibration as shown by the arrow 7 is applied, the
piezoresistive element 3 becomes 8. The tension changes parallel to the membrane as shown by
the arrow. Due to this tension change, the central part of the membrane is simultaneously
subjected to mechanical deformation. Thus, the resistance change proportional to the vibration
stress of the structure 6 is generated in the piezoresistance element 3 by the tension resistance
and the mechanical deformation of the piezoresistance element 3, and this is the battery or the
DC power supply 9 and the load resistance. A closed circuit formed by the piezoresistor 10 and
the piezoresistive element 3 converts it into a voltage change at the end of the load resistor 10,
and an AC component thereof is applied to an appropriate external amplifier circuit through the
capacitor 11 and converted into acoustic energy.
The pickup cartridge of the present invention is constructed using the electromechanical
transducer having the above-described principle configuration, and the specific configuration
thereof will be described below with reference to FIG. 3 and subsequent drawings for stereo. 12
is a needle tip for detecting vibration [111111] EndPage: 1 by tressing the sound groove of the
record, and 13 is made of a light alloy material for guiding the vibration of the needle tip 12 to
the electromechanical transducer The cantilever 14 is a very thin wire for forming a fulcrum for
the vibration when the needle tip 12 and the cantilever 13 vibrate in accordance with the sound
groove, and is supported and fixed to the inner end of the cantilever 13 by a spacer 15. 16 is a
Bungarami that defines the ultrafine wire 14 in the cartridge main body wJ, and is fixed with a
slight gap of 1 tnm or less between the wood end of the cantilever 13 and the needle tip 12 and
cantilever 13 freely by the ultrafine wire 14 It is configured to be able to vibrate. Reference
numeral 17 denotes a circular pressure element for applying pressure to a semiconductor vapor
deposition film element described later to change its resistance, and has a cylindrical pressure
contact portion 18. The end portion of the cantilever 13 is inserted and fixed in a hole 19
provided at the center of the circular presser 17, and then the braking support 20 is inserted into
the support 16 and is pressed against the presser 17. It is in contact and serves both as a
resonance damping effect of a portion constituted by the needle tip 12, the cantilever 13 and the
circular pressing element 17 and their support to an insulating base described later. Reference
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numerals 21 and 22 denote insulating thin film substrates made of an insulating material having
flexibility corresponding to 1 in FIGS. 1 and 2 and comprising a strip having a hole 23 ° 24 at
its central portion. The semiconductor piecing resistors 25.26, 27 and 28 are deposited on both
sides of each of the electrodes 23 and 24 under the same conditions as those shown in FIG. 1
and FIG. 2, and the respective semiconductor piecing resistors 25 Electrodes 29, 29 ', 30 ° 3σ,
3L 3f, 32, 32' are formed at both ends of the 26 °, 27 ° 28 respectively. Then, bent projections
33, 33 'from the side close to the electrodes 29.29', 30, 3σ, 3L 31 ', 32 ° 3z of these insulating
thin film substrates 21.22. 34.34 ', 35, 3 and 36, 3 da are integrally provided, respectively, and
electrodes 29 to 3 z are extended on the bent pieces 33 to 36' to facilitate external connection. It
can be done. The two semiconductor vapor deposition film elements configured in this way are
combined such that the holes 23.24 in the central part are matched to form a cross shape.
The same applies to the case where a semiconductor piezoresistive element is formed on an
insulating thin film substrate integrally formed in a cross shape in advance. [111111] 37 is an
insulating base formed in a cross shape, and a hole 38 is provided at the central portion thereof
and concave portions 39 and 40 are formed at central portions of one end surfaces orthogonal to
the central axes of the respective sides. , 4L42 are provided. The semiconductor deposition film
element combined in a cross shape is joined to the end face of the insulating base 3γ provided
with the concave portions 39, 40 and 4L 42, and the bending projections 33.3σ are the sides of
the insulating base 37, respectively. The support 16 on which the above-mentioned circular
pressing element 17 is supported is inserted into the holes 23 and 24 of the insulating thin film
substrate 21 ° 22 and is inserted into the holes 38 of the insulating base 37. Here, the support
16 is fixed by an adhesive or the like in a state where the end faces of the pressure contact
portion 18 of the circular pressing element 17 slightly press the semiconductor piecing
resistance elements 25, 26, 27, 28 respectively. When the semiconductor vapor deposition film
element is bonded to the insulating base 37, the respective semiconductor piezoresistive
elements 25. 26, 27 and 28 are combined to coincide with the recesses 39, 4 [) and 4L 42. The
electrodes of the semiconductor resistor elements 25, 26 and 27 ° 28 are connected to a
terminal 44 ° 45 fixed to the terminal plate 43. Reference numerals 46 and 4γ denote
cartridge housings. The cartridge according to the present invention is constructed as described
above, and its operation will now be described with reference to FIG. FIG. 6 is a diagram showing
the principle of the cartridge according to the present invention. The same reference numerals
are given to the same components as described above. Now, in the case where the needle tip 12
is moved in the direction indicated by the arrow 48, the cantilever 13 similarly pivots in the
direction of the arrow 48 about the vibration fulcrum 49 by the ultrafine wire 14. As a result, in
order to receive the force of the circular pressing element 17 as well, the semiconductor device
resistance element 25 is pressurized by the pressure contact portion 18 as shown by the arrow
50, and the semiconductor piezoresistance element 26 is decompressed as shown by the arrow
51. As the semiconductor resistance element 25 is pressurized and the pressure is reduced,
resistance changes occur in these, which are detected. In this case, the other semiconductor
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resistance elements 27 and 28 receive the rotation indicated by arrows 52 and 53 around the
dotted line with which the pressure contact portion 18 of the circular pressing element 17 is in
contact, and no resistance change occurs. On the other hand, when the needle beam 12 is moved
in the direction perpendicular to the arrow 48 [111111] EndPage: 2, this time the semiconductor
piezoresistive element 2γ.
28 is pressurized or depressurized to cause a resistance change, and the semiconductor
piezoresistive elements 25 and 26 do not cause any resistance change. The stereo vibration is
separated and detected by the above operation. In the above-described embodiment, although
there are four semiconductor piezoresistive elements, it may be composed of only two adjacent
ones. In the cartridge according to the present invention, as described above, a semiconductor
piezoresistive element is formed by vapor deposition having electrodes at both ends on four
protrusions or at least two adjacent protrusions on a flexible insulating substrate forming a cross
shape as described above. The formed semiconductor deposited film element is used as a
mechanical-electrical conversion element, and the semiconductor piezoresistive element of the
semiconductor deposited film element is subjected to a change in tension due to the stereo
vibration of the needle tip. In the present invention, according to the present invention, the
electromechanical transducer is subjected to harmful induction because it is composed of a pure
resistor, so that it is always pure. The resistance change due to the vibration of the needle point
is detected as a signal and the coupling to the amplifier can reduce the impedance. It is easy.
Further, according to the present invention, since the electro-mechanical conversion unit can be
configured in the same plane for each channel, it is possible to combine the related mechanical
units with each other in a very simple manner, thus significantly improving the main idea.
Furthermore, since a semiconductor deposition film can be used for mass production at one time,
uniform elements with excellent performance can be obtained, and an extremely large
compliance can be obtained. Industrial value is what makes a dog.
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