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JPS5714299

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DESCRIPTION JPS5714299
Specification Ejection devices 2 and 4N Claims A pair of electret elements in which the electret
material is attached to the back electrode and the electret is made to face each other in the ? back Iij direction (see a @). In laminating a pair of current collectors between each electret
material of these pair of electret elements, LDs said pair of aII! An electret apparatus
characterized in that each of the fBIc of the body has a single charge of the valley electret
element which is substantially equal to the algebraic sum of the order and has charges of
different potentials. 3. Detailed Description of the Invention The present invention relates to an
electret apparatus, and in particular, to an apparatus which attempts to equalize the electret Adfit
# density and the like as a n-type. As is well known, electrets last for a semi-permanently charged
charge. It has the nature too. Because of this, they are used in various fields as electrostatic
transducers and the like. FIG. 1 shows the principle configuration of a conventional capacitor
microphone using this modified electret, which is a back electrode consisting of four conductive
metals. Electret material 1 such as ll K ^ molecular film 1: lk 4 & The electret structure tS which
is electretized is used as a fixed electrode. Then, the diaphragm 16 such as a metal thin film
stretched on the holding ring 15 is provided opposite to the fixed pole formed of the electret
structure 13 via the spacer 14t ? ? such as an e-rim as a town m pole. Electric power unit is
configured. Thus, when the sound plate 16 of this electrostatic unit is displaced by the external
sound pressure, the oott capacitance C between the both electrodes is changed, but Q; Cv; If this
four-electret structure 13 is given), the voltage V of both electric potentials will be changed.
EndPage: 1 Accordingly, the sound pressure is converted into an electric signal electrostatically
by extracting the change voltage V ? ? as an I / V ida / a change through a field effect
transistor (ygr) etc. A condenser microphone is realized. Figure 2 shows the following case where
it is applied to the Conden head 15-knit and shows the principle & CrX, 19 that performs the
opposite operation to the case of the above-mentioned capacitor microphone / 19 and the
electric signal all electrostatic It is possible to convert pressure vcR. In this case, in this case, the
diaphragm 16 'as a next-town working electrode stretched on the holding ring 16' (a pair of
electrets via the n spacer, ti and t4'ir at the center and on both sides thereof) By pairing the cross
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member 1s and tx @ fixed 4j 25 as a pair, a so-called Pu's V nibble condenser head / unit is
realized.
2. An electric signal is given to each electrode of such a headphone unit through the signal
source gaiktrans [jI- and high resistance R1 * Rgt-. As described above, the electrostatic type tiger
/ sgeney f using the electret structure as the fixed pole as described above is different from that
of the usual one and no DC power source for polarization or bias is required, so that the structure
can be simplified. It is possible to miniaturize, and thus it has the advantage that it can be
superior to the lower price. However, the electret structure, which is the most important one, has
a serious disadvantage that it gives #I influence to various characteristics as a tiger / stripe user
by b in that the variation of the surface charge distribution, that is, the unevenness of the charge
distribution is large. Had. FIG. 3 shows an example of measurement of the surface charge
distribution of the conventional 411 electrets, where electret material 1 + 125H is attached to
the back surface * 11 made of an aluminum plate with an outer diameter of 60 cranes ? and
electretized However, as you can see from the figure, it is known that it is hollow within a very
large range of late io'ov. In the figure, the flat portion tzb at the center of the non-electretized
portion except for the wavy undulations $ 12 a in the periphery is a non-electretized portion
provided for manufacturing reasons etc., but its variation around the non-electretized portion
tzbo surface charge density value There is a problem that it will drop significantly more greatly
than in the above case, and the effective area which can be affected by the static action will be
reduced. The various conversion properties involved will be further degraded. In addition, the
conventional electret structure is exposed so that the surface portion of the electret material 12
is exposed to direct fj & nitrogen, so it has poor moisture resistance and not only has problems in
terms of temporal stability, but also shortens the life It had a serious drawback t-a lump.
Therefore, the present invention has been made by devising the above-mentioned point, and the
tlj 4 (m> form is obtained as a form, and the surface of the lefttlet and the charge density are
favorably obtained as shown in FIG. 9 as well as the stability). An object of the present invention
is to provide an electret device which can be greatly improved. One embodiment of the present
invention will be described in detail below with reference to FIG. That is, as shown in FIG. 4, for
example, PP, TlMC, F'gP (DQ [A molecule 74 is made of an electret material 221. Nineteen pairs
of electret elements 231 ░ 232 t-one back electrode Z 11. 212 t-face each other are laminated
in a manner to form an electret.
And the area and shape of these valley elements are the same.-The heater 7C is 7 n or less
conductive metal material @tfc is an organic material and a pair of dielectrics 241 ░ 242 made
of earth and insulated electret material of bamboo element @ 221, 222. 19 in these pairs of
stacked OSs, each surface of these paired OSS rods 41 ░: J 42 is approximately equal to the
algebraic sum of the electric potentials of the electret elements 231 ░ 232 and mutually
opposite to each other It is constructed so that the electric charge of the 'w1 position is exposed,
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and it is a nine-electret dressed d25'ft actual t. EndPage: 2 where: :! In contrast to -O which
usually refers to 1 and 2 to 42, the term "electroconductive metal material" and "organic
material" (which will be described later) are generically referred to. In addition, here, the organic
material is a thermoplastic and thermosetting resin material, and these are combined with the s4
material (a composite material and K is a material including a 2'-stainless antistatic material and
has a volume resistance of 10 11 ?) So-called insulation materials of-(most) or more shall be
generically referred to. Then, when the electric charge of each electret element 231 ░ 232 has
the negative sign e in the above, the endless continuous tread device t25 configured as described
above, each element 231. , 232 electret materials 22 and 222 @ laminated dielectrics:! Between
the surfaces of 41 and 242, a phenomenon (dielectric action) is produced which induces an E
sign {circle over (1)} or a negative sign eot which is a sign or sign different from or equal to that
of the element 23. In this case, the presence of the dielectric 241.142 not only causes the abovementioned L5 Hii current application, but as will be described later, the equalization of the table
Eiitas degree as an electret device is well achieved. In addition, the point where the stability is
secured is superposition. In the above, the surface potentials 7 g, g of the respective electret
elements 231.232 alone. Assuming that the flame fronts stacked on this and induced to fc
dielectrics 241 and 242 are rLEa @ and Eat respectively, IEs port = ? и (E?5-41) = Igstl, Here, ?
is also referred to as the 1f induction number, and it is confirmed that it is approximately in the
range of ? = 0.6 to 0.99 when aIt is not z4t, z4z is a metal. That is, the above equation can be
regarded as Ea, * BB-H @ Medium-Ea1. Therefore, each element t-block 9 is a negative sign and
the combination is E1 = gz "H-H + at = Haa = Oms> Ex- = gst = eHam = egl <g * ..- Ba1 = dmam =
<83 (Consequently, it becomes possible to carry electric charges of different signs with each
other, which are substantially equal to the algebraic sum of the electric potentials of the
respective elements alone and which have an arbitrary potential relationship of a negative sign.
FIG. 5 is realized as described above. A concrete example of the case of obtaining 5t-is firstly a
dielectric, first of all dielectric 241. # back to 11c and other 2111. 212 of the r element!
Continued rt, ? x 8W (2) contacts are closed sequentially after the dielectric 241,: 143 each R1
electrode: ttt, srz gold earth same potential ring 9 after zero charge state, Switch 8 Wt to 19
ground and insulate to open. Then, for example, these four are held in the phrase ? state using
an insulation bin set or the like, and a pair of Jt books 24?t, zaz ? @ valley electret g и s: 31 and
232 electret materials 221 ░ 222 four laminated one? n is such that the dielectric action occurs
as described above. In this case, the dielectric 241. When 142 is a conductive metal material,
electric charges will be induced instantaneously, but if it is an insulating material, it will take
some time for cough-induced charge to reach one leg voltage (eg, 30 minutes' root) Every time)?
??? ??? ???? Also, if the switch 8W is closed again from such an induced state, the
dielectric! t41.24: When the metal is metal, the electric charge disappears so that the potential
becomes zero immediately. However, in the case of the insulating material (however, in the case
of fluorine 41f oil, it is equivalent to that of the metal). It becomes attached to the time constant
which is related to the movement of electric charge as it disappears. FIG. 6 shows another
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specific example in which the area shape is smaller than that of each electret element for the #
f'1E body 24 and rt 9 glass is used, and the above-mentioned Gafuss @ t * 241a, 242a. Even if
the induction coefficient ? is about 0.83 (the dielectric charge of the glass dielectric is about
580 v for the electret element potential of about 700 v), it is confirmed that it is induced in the
case of metal and about Si etc. The Since the dielectric time of the glass dielectric 24a is reduced
again from the dielectric switch, the switch swt is closed faster than the insulating material such
as A'B8 resin and slower than the metal material, so the surface potential t-adjustment If you
need to have EndPage: 3 interest. 8g7 shows one finger m of stability (leakage characteristics) of
the charge that has been sieved on each surface of a pair of I current collectors 241 ░ 242 as
described above, (a Is the case of a metal material (but the same applies to the case of a fluorine
resin system), and the good stability is excellent with almost no change from the initial state a.
Also, (b) is an insulating material such as AB8 resin, and after about 5 minutes from the initial
state, the leak is settled and good stability is obtained after -t ? ?.
By the way, such stability is such that the electret device has a pair of dielectrics 241 and 24'2 fl
R- on each surface of the electret elements 221 and 232 which are in back-to-back relation. As
filK-protecting is done, it is promoted by making it so that the electret surface is not exposed as if
directly touching the aspiration, unlike the conventional case. In other words, xomt body 24't,
J42! By making the edge / t) element 231, 282 surface 'tg 7 km, it is possible to improve the
moisture resistance as much as it is advantageous at the one point of the temporal stability as it
is possible to extend the life. Stability t- can be secured. As shown in FIGS. 8 (a) and 8 (b), each of
the surfaces of the electret elements 231.232 has an rL-shaped uneven portion and a pair of ist
bodies 241 and 242 laminated on this. Since the area in direct contact is reduced, the stability
can be further mixed from the handling ?. FIG. 9 shows the measured n of Table 1 fi ? IE load
distribution of the electret apparatus ? as described above, and electret material on the back
electrode zla made of an aluminum plate of outer diameter 60IIIl?: The Is turtle body 24b
having the same area and shape as that of the earth pot electret element 23a which has been
subjected to 2 ak deposition and electret ratio is placed again, and it is a distribution state of IE #
charged on the surface of the dielectric 24b. That is, as can be seen also in this figure, it is known
that the surface 1 load density 'does not exist in the prior art'. The slight decrease near both ends
in Fig. 18 is due to the accuracy of the measuring instrument and is essential: there is no "X".
Further, in FIG. 9, the central flat portion 22c, which is the center of the wavelike uneven portion
zzb2 divided by tn in the periphery, is a non-electretized portion provided for manufacturing
reasons as in the conventional case. Also in the central part of the surface of the dielectric j4b, no
decrease is observed, and a charge density of 9- is obtained in the peripheral parts and the like.
In contrast to the conventional case, as an electrostatic transducer in the point of the grain where
the M effective area given to the abrasive action is not substantially reduced even if there is a
non-electretized part, 9 Significantly improve various conversion characteristics including the
conversion efficiency of That is, according to the above, the electret device U formed by
laminating the pair of dielectrics 341, 242 ? ? f on the surface of the pair of electret elements
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231 ░ 232 that are in a back-to-back relationship with each other is simply a pair of 1 #
conductors 241. In addition to exhibiting a predetermined, load-induced four pattern based on
electret charge on the surface of 242, the effect of holding each electret element 231, 232 by the
pair of & 1 collectors 24 and 2'42 is low. It is vcM that has been found to have the = 1
uniformization and the Vh's extremely immersed advantage of the surface charge device, which
is also improved by the improvement of the properties and the rfJwL load leveling effect of the
table. .
By the way, although the above-described electret device 25 has an application surface 2 m of ?
q as an electrostatic transducer, there is a pick-up cartridge 2 and a speaker besides the abovementioned microphone and head bone particularly for acoustic equipment. When applied to t- #
devices of Crt et al., There are the following advantages. That is, first, in order to increase M
efficiency, noise reduction and 1w1 efficiency improvement, distortion reduction by equalization
of voltage distribution, and improvement of stability by improvement of stability, reduction of
variation as a whole, The yield direction EndPage: 4, on the point of improvement in accuracy
and cost reduction by simplification of the structure. In the case of + + microphone, to increase
its capacity Eri, human to the field effect type converter for impedance conversion to human
noise / to reduce the noise level ? 9, even lower I! You can be motivated. In addition, it is also
possible to achieve so-called transformerless conversion so that headphone-speaker combination
can be converted into four costs of a signal supply transformer according to the duty ratio. The
following fields can be considered as applications other than f. For example, it is applied to
various electronic fM devices and subfoot devices (including radiation 4Ijll meters) as switches
and sensors as a switch and sensor in substantially the same manner as the electrostatic
transducers described above in principle and to digital devices as memories. It can be applied.
Also, various # 14! The present invention is also applicable to (electrostatic printing machine,
electrostatic generator, # turtle dust removing device, etc.), and is also applicable to medical
equipment and 71 IV high-voltage IEt source. And, of course, the other applications and the
modifications of the above-mentioned example of the above-described LJ1 fishing apparatus are
possible within the scope of the present invention. Therefore, according to the present invention,
it is possible to obtain LrL и ?, particularly as the derivative (N) form, as shown in FIG. An Lshaped electret device can be provided.
4. Brief description of the drawings. FIG. 1 and FIG. 2 show the basic constitution H51Lg4 of the
conventional capacitor microphone and capacitor head vehicle / unit, and FIG. 3 is the prior art
used in FIG. 1 and FIG. Surface charge density vI of the electret structure, an actual measurement
view, FIG. 4 is an explanatory view of the configuration of the electret tcWIL according to the
present invention, an explanatory view showing the configuration, @ 5, and FIG. 6 show a specific
example of FIG. 7 is an actual subfigure illustrating the time-dependent change characteristic of
the charge induced in the electret device of FIG. 4, FIG. 8 is another specific example t-figure of
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FIG. 4, and FIG. The surface charge density kIP1 of the electret device shown is -II-. 2tt, 2tlt-one
back electrode, zzt, ttzz ... electret material, 1131.212 ... electret element, 241, 24 ff-иии ? ?
dielectric, 25 иии electret device. Applicant Agent 1 Takehiko Suzue EndPage: ?
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