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JPS6164179

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DESCRIPTION JPS6164179
[0001]
(Industrial field of application) This invention is a piezoelectric body, oxidized Ill! The present
invention relates to a piezoelectric device in which the pressure resistance of lead and
crystallization of a crucible and the moisture resistance of a crucible are improved. (Conventional
art) The crystal film of zinc trihalide is pressured in the direction of its crystal axis C, l @! 14?
Note: cb-b, this piezoelectric property is utilized, and the pressure of a C, shoreline surface wave
element, common child, etc. is taken as a book-[useful ° C]. (Problems to be Solved by the
Invention) Zinc oxide is originally C active in the surrounding atmosphere, and is used as a senna
body such as a gas sensor or a temperature sensor. However, when using zinc oxide as a
piezoelectric material 'C, there is a problem in that it is active in the surrounding atmosphere, for
example, the inclusion of moisture causes deterioration of the insulation resistance, and the
piezoelectric material of the piezoelectric device becomes' C It can not be used. Therefore, in the
case where zinc oxide is used as a piezoelectric material, it is conceivable to form a back surface
KjE electrode of the piezoelectric crystal film and further to form an insulating protective film on
the back surface to provide a moisture resistance. However, in such a structure, since the
piezoelectric crystal film of 'C zinc oxide including an electrode and a crucible is coated, electrical
connection between the electrode and the external circuit can not be performed. However, it is
necessary to take measures such as breaking the insulating protective film on the C1 electrode or
placing a mask so that at least a part of the electrode is exposed to the outside. However, C does
not lead to the improvement of the moisture resistance, because moisture permeates through the
piezoelectric crystal film of zinc azide through the portion having no insulating protection by
such means. In addition, either means must break insulation protection or use "mack" to form "C1
d protection r", and the process is complicated, and there is a female in terms of workability.
(Object of the Invention) C1 This invention does not have the above-mentioned problems, and
has an object to provide a pressure film made of a 4 L crystal film of zinc oxide having improved
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moisture resistance. The present invention is a piezoelectric device characterized in that an
insulating film is formed on the surface of a piezoelectric crystal film of zinc oxide, and LtgS is
further formed thereon. The present invention will be described in detail according to an
embodiment of the present invention. This practical example is described in the case where the
pressure c is taken as an example of the c-type piezoelectric resonator. 1 to 3 show the structure
of a piezoelectric resonator 69, and FIG. 1 is a plan view of the main body of a pressure
resonator, 2g2 FIG. FIG. 3 is a '@ side view of the state in which the main body of the
piezoelectric resonator is enclosed in a case.
In the figure, [1, 1 is a main body of the pressure kicker i5, 2 is a vibrating element 9 and this fR
moving element 2 is supported by a C frame 4 via a support portion 5C. These vibrating
elements 2. The support 3 and the frame 4 are formed of a conductive member, for example, a
ylJ bar. The piezoelectric crystal film 5 of acid ratio zinc is formed on the surface of the vibrating
element 20, and this zinc oxide piezoelectric film 5d is formed by a sputtering method such as
myroperite / 100 crystal film 5d, an ion grating method, a vacuum evaporation method or the
like. In addition, pressure C crystal film 5 of zinc oxide is disclosed, for example, in Japanese
Patent Publication Nos. 57-1153, 57-1156, 58-60749, 58-51744, and the like. There is An
insulating protective crucible 6 is formed on the piezoelectric crystal film 5 of zinc oxide. This
insulating protective film 6 is also referred to as a passivation film), and as is apparent from FIG.
2, it also covers the side surface of the piezoelectric crystal film 5 of zinc oxide. The material of
the insulating film 6 is “C: Al 2 O,”. 81、N、、8i0.、Ta30.、Tie!、
ZrO,、PSG(phospaoailicategla8りなどがある。 Among them, LfA
such as MoIhOs has a protective film 5 formed by a vacuum evaporation method, and an
insulating protective crucible 6 such as Si, N, etc. uses a plasma vapor deposition method.
Further, an electrode 7 such as A /, Ni or the like is formed on the I / F H '246 and is C'. The
main body 1 of the piezoelectric resonator having such a configuration is connected and fixed to
the connection piece 81180 of the terminal member 8. The main body 1 of the piezoelectric coactivator connected and fixed to the terminal member 8 is an insulating case 9 made of resin or
the like. It is enclosed in (1). Insulation case 9. After being sealed in (1), the coupling piece BCa8 ''
of the terminal member 8 is cut along the alternate long and short dash lines B-B and C'-C. Next,
an example of a piezoelectric resonator in which the insulation dJ is formed of Si and N will be
described. First, a piezoelectric crystal jQ of zinc oxide having a thickness of 20 μm was formed
on the surface of the vibration element 2b by high frequency sputtering. Next, this was placed in
a vacuum chamber, and silane gas (SiH 4) and N, gas (or NH, gas) were introduced into the
vacuum chamber, and the degree of vacuum was adjusted to 9, 5 Tt) rrK. Furthermore, a plasma
is generated in the vacuum chamber in a state of 300 C) heat-up, and piezoelectric crystal of zinc
oxide by decomposition of 7-run gas and horse gas: insulation film consisting of Eii 3 M on top,
the protective film Formed.
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After taking out from the vacuum tank, A /, iJ: crucible was formed by vacuum evaporation. After
that, as shown in Fig. 3, it was enclosed in a case and a case, and it was taken as a trial of the test
layer to lend next. In addition, the pressure .alpha.-resonator C formed in the side edge protection
t = 4 k Al z Os was also enclosed in the insulating case and similarly used as a sample for testing.
In addition, formation of A 1 20 x is A41! O, was used as the evaporation source by electron
beam evaporation. Each of the piezoelectric corers obtained in this way is placed in 11 and at
120 C, 2 atmospheres bubbles, 41 atmospheres of sum pressure, (1) hour release 9 ffi L, a test
referred to as a pre-shocker I went layering. After this test, if the ratio of the 1st graded zinc
oxide film of 7 o'clock specific ratio zinc (• immersion resistance (tech R))! The pickles are shown
in FIG. 4 (a) to (d) and FIG. 5 (a) to IQ). 4 (a) to 4 (d), SL, N, an example of forming a film of τ *,
1; and FIGS. 5 (a) to 5 (c) formed an Al 20 s insulating protective film It is an example. Fig. 4 (IIL)
shows the film thickness of Si and N4, 5000A, 41 (1) shows 5isN, the film thickness of 6000X,
Fig. 4 (C) shows the film of Si and L, thickness 8000λ, FIG. 4 (d) shows the distribution of the
insulation resistance (T) when the film thickness of S i s N 4 is 10 C) oou (1 μm 1). 5 (a) shows
that the film thickness of A1 (1) 3 is 5,000, FIG. 5 (b) shows kLOs (D film thickness is 1 [(1) 00
people, FIG. 5 (C) is Al * It shows the distribution of absolute resistance and resistance (T) when
the film thickness of os is 20000. FIG. 6 is a comparative reference example showing the
distribution of insulation resistance (rR) of the crystal film, in which the pressure of zinc oxide
which is not C and which forms the insulation protection crucible is shown. The number of wipes
was (1) 0 in all cases. As is apparent from FIGS. 4 to 6, it can be seen that in the case where the
surface of the piezoelectric crystal film is covered with an insulating protective crucible, the
deterioration of the insulation resistance is also small after the Bletzaker test. The film thickness
C of the insulating protective crucible is in the range of 0.6 μm to 5 μm in the case of Si and
N4. If it is less than 9.6-, it does not contribute to the effect of forming the insulation protection
fence, that is, the improvement of the moisture resistance, and if it exceeds 5 μm-- In the case of
Al x Oz, the Jj statement 4 has an appropriate range of α5 / 1 m to 5 μm, because the reason is
81sN, It is the same as the case. Further, the relationship between the film thickness of the
insulating protective crucible, the series co-image resistance (RO) and the parallel resonance
resistance (R,) was determined as C1111, and the result is shown in FIG.
In the figure, solid lines indicate Si and N4, and broken lines indicate A1 (1). As apparent from
FIG. 7, the pressure of zinc oxide 'a! An insulating protective crucible is formed on the crystal
film, and further tffl is formed to form an insulating protective crucible. As a result, the C
characteristic is hardly deteriorated as compared with the non-C found. This means that the
pressure of zinc oxide is insulated between the crystal film and the electrode ii! i) In the state in
which the pattern is interposed, 6 ′ ′ (also, it can be driven by an alternating current voltage
by capacitive coupling) (effective) or more according to the configuration of the present
invention, zinc oxide The moisture resistance of the piezoelectric crystal film of liquefied zinc can
be improved by interposing an insulating protection between the piezoelectric crystal film and
the one electrode, and the '4 pole is exposed to the outside. Therefore, it has an advantage that
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electrical connection for voltage application can be easily performed.
[0002]
Brief description of the drawings
[0003]
Fig. 1 is a plan view of the main body of the pressure resonator, Fig. 2 or Fig. 1A-an enlarged
cross-sectional view of Fig. 1A-Fig. 5A is a cross-sectional view of a state in which the main body
of the piezoelectric resonator is enclosed in a case, Figures (a) to (d) show the distribution of the
insulation resistance of 1ij1 zinc piezoelectric crystal film on which 5ijN of the insulation
protection wedge is formed, and Figures 5 (a) to (Q) are A4 'x Oa Fig.6 shows the distribution of
insulation resistance of zinc oxide piezoelectric film and crystal film, and Fig.6 shows the
distribution of insulation resistance of conventional zinc oxide piezoelectric crystal film, and Fig.7
shows insulation protection It is a figure which shows the film thickness of a crucible, 13 iJ
relation of series co-image resistance (RO), and parallel resonance resistance (Ra).
1 is a main body of a piezoelectric resonator, 2 is a drive element, 4 is a frame, 5 is a
piezoelectric crystal film of zinc oxide, 6 is an insulating protective film, 7 is Ii 甑.
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