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JPS50146533

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DESCRIPTION JPS50146533
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram showing a conventional
microphone device comprising a microphone and a microphone preamplifier, and FIG. 2 is an
application of the present invention to the conventional microphone device shown in FIG. It is a
circuit diagram showing an example. M: microphone, A: microphone MHt amplifier, EO: signal
voltage, CO: equivalent capacitance of the sound receiving element, RttR2: resistance, Cl: coupling
capacitor, E: driving Power supply. Fig. 1-73 (Fig. 4) (1-146533 (2) Fig. 2 agM (B (Fig. 3 a "Xvr
ino t α (Fig. Sho 50-146533 (3) correction Sho 49.7. 15
[Detailed description of the invention] This invention company, a lift table where a 1-flow
component of a level higher than a certain level is an output signal of a sound receiving element
of a microphone, a level of the sound receiving element of this microphone A microphone device
for rapidly producing the stray component of the outside to the outside, in particular, a
microphone pre-amplifier (this voltage is applied to n so that the direct current component is
received at high input impedance; If it is cut off or saturated, it is a micro-hoice that makes it
stable to starvation at wholesale prices. The present invention relates to a microphone mounting
which is not suitable for 1III m width. Before entering into the explanation, for the film of the
percussive three-letter character of this sweaty microphone, a flexible one film will be described.
For this 7-inch sweat film, the unstretched film is drawn in a constant temperature bath with the
mixing price (bO to l000C) of the local government office to a predetermined double cooling, and
the conductive metal is vacuum-viewed on both sides. Provided by 1! Apply iil, llN electric field
(700-1500 KV / cm) to the film material's current collector and raise the humidity to reach the
temperature & temperature (80-130 ° C). , And an electric field is applied, and it can be
obtained by cooling with housing Li wet 1. What must be taken into consideration when using
this piezoelectric film as a sound receiving element of a microphone is that the generation of the
piezoelectric film with respect to the sound wave from the outside 1 [庄 (IIF! Positive or negative
of the electromotive voltage is applied to the earth 慟 1 (2 or more, it is determined from the
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polarity of the sound receiving element and its stretched structure) . The polarity of the -7 sound
receiving element is given by the direction indicating the polarity, that is, the part & process by
the DC electric field described above. For example, as shown in FIG. 1, when the polarity of the
flow N field is such that the plus mark is on the upper side of the film cord and the negative day
is on the lower @, the plus side of the DC electric field The film material in contact with the film is
polarized at minus e, and the film material in contact at the minus 5 side of the negative
electrode +1 is polarized to plus 0, and the direction indicated by the piezoelectric film
polarization direction fFEW property) Fi arrow. On the other hand pressure 1 made this way! !
The structure for stretching the film as a sound receiving element is of two methods, and -C'1'L
et al. Are shown in FIG. That is, in FIG. 2, the sound receiving element is formed in a convex
shape as shown by the arrow or in a concave shape as shown by 0 with respect to the incident
direction of the sound wave shown by the arrow.
In the two stretched structures, the polarity of the polarized sound receiving element is made the
same surface, for example, the external sound wave 0 person 2 ("Symbol + 4 MI, the sound of the
sounding wylon is made plus Φ The electrode rl # IK of the sound receiving element shows an
electromotive voltage (piezoelectric piece) II'it '# 1 structure (8), which is a furnace in the
structure @. Therefore, the direction of the induced voltage-(voltage voltage) is determined by the
polarization direction (direction indicated by the piezoelectricity) and the stretching structure of
the mesh using the @I 'sweat film of jin as a sound receiving element of the microphone. This is a
complete decision whether the next-stage 入 -input Cainve-dance pre-gain II (high input
impedance conversion amplifier) uses an N-type 1 p + path or a P-type circuit, and these
examples It is shown in the following table. For the receiving element, the polarity of the
receiving element is used. The structure of the cell-+ (Ino (n #) (A) +-(uHp type) one-ten (i Hn
type) (H) ten-(ro) (pl ! 囚, t3) W shown in FIG. 2, in the direction of the sound wave incident on
the outside (complementary to what the receiving cord is formed in a convex shape (turn). The
concave shape of the book is referred to as (C), and the inertia of the sound receiving cord is the
distribution characteristic of the piezoelectric film in the distribution processing of FIG. The
surface on which the sound waves of the light source are incident is the front, and the surface in
the form of extension (from the inside of the microphone is the rear surface [6]. I further to use?
There are n-type and p-type circuit configurations according to the direction of the electromotive
force (sweat pressure) of the sound receiving cord by the sound wave from the outside as shown
in FIG. I will do it. If only this table or fFi, for example, the receiver 111k of the phoneme hand is
used as the 2m eyebrow, and its 9-tone element is used as. ) 1)! Report to use 7 circuit
configuration, ie n-type 1pl route, and it is better to go to Park / Eave according to each item. As
an example of a conventional microphone mounting, a piezoelectric microphone N using an ItlI +
molecular piezoelectric film is used as a source water amplifier E 1 r 1 m # of amplifiers using an
S # [0 path shown in FIG. Show. In this figure, a person is a microphone-11-amplification, and (5)
an N-type Rees follower circuit mainly composed of a field effect transistor (hereinafter referred
to as PET) at pW + having a high input impedance. M is a piezoelectric microphone that converts
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sound waves into potential differences, and when a heavy acoustic wave indicated by E and a
broken arrow a is applied to the sound receiving element, the signal voltage of the sound
receiving element that generates the arrow direction, CI, Skeleton C) Equal f # g g-amount of the
sound receiving element, and one side is connected to the ground side, and e11 is connected to
the gate of FE1 (J pura which constitutes the N type source follower role j path).
Also, the gate Ga of the FET is connected with a very high resistance H1 between it and the
ground, and its lease S is a source resistance? It is connected between cRt and ground, and
further, a 1-r coupling capacitor C1 is connected between the source S of the ET and the source
resistor R6 to connect the suspension amplifier No. 4 of No. 4 amplifier. There is. It is to be noted
that E is an idle current to drive the FET Lo circuit, and the FET is N1 j l J, and is connected to a
so-called negative needle collection in which the positive electrode is connected to the drain D of
the FET by C which is C. At this further point, when a very large “legal sound wave and a
desired (6) sound wave are added to the microphone from outside, the sound receiving element
of the microphone M mainly has a direct passing component. A large signal voltage E0 is
generated in the direction of the arrow 7b, and the signal voltage E0 is applied to the FE'l '' gate
G) to cut off the FET. As a result, the FET's gate-(3) is a signal for military use mainly composed of
this eddy current component, while it is determined by the time constant of the r1 resistance R1
held by r1 and the equivalent volume C C0 of the receiving member Operation becomes unstable
and the desired output signal can not be obtained from the coupling capacitor C7. Although the
amount of floating customers actually exists between the gate G and the lease S of the FET, the
plug is smaller than the equivalent capacity of the sound receiving element and can be ignored.
For example, when the time constant C0R8 is listed numerically and the time constant is
calculated, the equivalent capacitance C0 of the sound receiving element is about 1100 pF, the
resistance R8 connected between the ground G1 of the attached FET, and the FET high Since the
input impedance 1gJ path is formed, if it is several hundred MΩ or so, if this is 47oM <), then
the time constant WIC6R at this time becomes about 0.5 seconds, causing a thick defect in
practical use. The The present invention has been accomplished by focusing on such
conventional drawbacks, and its main purpose is to provide a simple one-pass configuration in
which an excessive signal voltage including an oil flow component is contained in the sound
receiving element of the microphone. Even if it occurs rapidly, the excessive signal 11 sweat is
rapidly drained to the outside to obtain a microphone black that operates stably in a short time.
Hereinafter, the present invention will be described by applying the present invention to the
conventional microphone distri- bution shown in FIG. FIG. 2 shows an embodiment of the present
invention which is composed of a piezoelectric microphone using sieve molecular piezoelectric
film and a high input impedance microphone pre-progressive multiplier having PET, a diode, a
resistor, a capacitor etc. It is a (ro) road map of it. In this 7, each reference numeral is the same as
that shown in FIG. 1 and is omitted, but here the gate GM of the FET and the ground IIII!
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A diode D is inserted and connected between l :. The diode Dr) M characteristics differ depending
on the direction of the signal voltage E 0 of the receiving element of the microphone, and on the
positive & side of the 伯 g turtle pressure E, which is generated with respect to the DC excessive
acoustic wave (arrow a) from the outside It is connected in the opposite direction. That is, in the
case of this figure (the signal charge FFEo of the glass receiving element is connected in the
direction of the arrow a so that its positive charge is applied to the gate G side of the FET t. The
gate Ga of this FET is followed by Km so that the n-type of the diode D comes. According to the
operation of the microphone device of this invention having such a configuration, the
microphone M receives the sound wave from the outer tube and the signal ml 庄 E which is
normally received. If you are generating that signal! F! 'Eo biases the gate G of the FET to turn
on the FET circuit and perform Ean's conversion, and is led as an output signal through the
coupling capacitor C. Since C and T should have characteristics such that the reverse resistance
exhibits high resistance with respect to the signal voltage E, they are simply used for high
resistance. On the other hand, the signal voltage E having a certain 5 L1 j or more desired sound
wave and a sound wave more than a certain level from the outside to the microphone and having
a ta acid component as its main component in the receiving element. When a force is generated,
the gate voltage of the FET rises from the signal voltage EllK to a working f #, and when the FET
turns on the path and the gate voltage becomes saturated (9), it becomes this gate G Ken 1 Due
to the breakdown electric charge F + of the reverse direction characteristic of the diode D
connected to the earth arm, its resistance → → (jl squeeze, this signal 1 tsubo E, rapidly flows to
the earth side via the diode D . And FET game) 1 N sweat falls to some extent level kv. The gate
voltage of pET goes from saturation / break to low, and the reverse resistance of diode D is again
high resistance, L1 'after the desired from microphone M (i's or FET's gate G , And the output
signal derived from the coupling capacitor CI can be obtained as a stable signal with less
distortion. Here, the breakdown voltage of the diode used in this invention is set to a level slightly
lower than the DC voltage for saturating the pace voltage of the FET, but depending on the main
application, the diode with 81 + Ge is used as required. It is variable by using it. In this example,
although the microphone with negative polarity is used as the negative polarity, the microphone
with positive polarity is added!
Similarly, the present invention can be applied to the case of lf ground, in which case the polarity
of the diode (10) is reversed to that of the real 1i 11 example, and the PET is P-type, and the
drive power supply of the FET circuit is additionally grounded. It can be done well. Also, in front
of the microphone of this embodiment! ! Although the 1 ml 1 unit is biased depending on the
presence or absence of the input signal to turn the FET circuit on and off, this is similarly
applicable to the fixed bias type and the self bias type of this medium, and the configuration
shown in the embodiment It is not limited to Furthermore, even if a capacitor is connected
between the microphone receiving element and the FET gate hood 11 to block the DC voltage of
the microphone power, etc. at the input of the 1 microphone pre-amplifier III, the microphone By
inserting a diode in parallel with the sound receiving element, the same function and effect can
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be obtained. In this way, a diode is connected in parallel 1 in parallel 1 to the sound receiving
element of the microphone and the pace (gate in the FET) of the first stage transistor of the
microphone pre-amplification talk, In addition to being able to stably operate the microphone
device in a short time with respect to the excessive output of the sound receiving i (17) element
of the microphone, the device not only enables the sound receiving element of this microphone
and the first stage transistor of the microphone preamplifier Have the effect of protecting
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