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This translation is machine-generated. It cannot be guaranteed that it is intelligible, accurate,
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The present invention relates to chemical or physical vapor deposition of, for example, a single
film of boron as a speaker diaphragm, a surface protective film in a semiconductor, two
interlayer insulating films, a solar cell using amorphous silicon, a coating of high hardening in a
working tool, etc. It is an object of the present invention to provide a vapor deposition apparatus
capable of simultaneously heating the substrate and increasing the energy of vapor deposited
particles when carrying out vapor deposition. . Generally, in a deposition apparatus for chemical
or physical vapor deposition, as a heating means of a deposition substrate at the time of
deposition, a heating method by direct energization of the substrate in a perger, or a resistance
heating body provided in the vicinity of a substrate in a perger There are heating methods by
radiation or heat transfer from the above, induction heating methods by high frequency
electromagnetic waves, and heating methods by infrared radiation. In addition, in order to
increase the deposition efficiency, the deposition particles or gas may be irradiated with high
frequency electromagnetic waves to be converted into plasma, or a DC high voltage may be
applied to be ionized. Some current vapor deposition apparatuses have heating means and means
for increasing energy such as plasma or ionization. For example, in the preparation of the
interlayer insulating film 2 surface protective film in semiconductor manufacturing, the silicon
wafer is heated to about 2 ts o 'C by indirect heating, and the wafer is further placed in a direct
current or alternating current high electric field to perform chemical vapor deposition. A SiO 2
film t Sis% film or the like is produced by the method. In this case, since the calo heating device
and the high voltage application electrode enter into the chamber, the electromagnetic wave
from the high frequency power source is absorbed by the metal part such as the heater and
difficult to heat, and the electrode material is sputtered to contaminate the semiconductor. It
becomes the origin and 3t1 that high temperature can not be realized. There is a problem of /
and so on, and the field of application is limited. FIG. 1 shows a conventional vapor deposition
apparatus, and in FIG. Is a plasma generating electrode with a gas jet, 38 is a gas flow, 39 is a
sample table and plasma generating electrode, 4o is a heater for heating the substrate, 41 is a 0
ring, 42 is a chamber lower lid, 43ij reactive gas outlet, 44 is 0 A ring 46 is a power supply
introduction terminal, 46 is a vacuum pump, 47 is a heater-temperature control device, 48 is a
power supply for plasma generation, and 49 is a substrate. As described above, in the
conventional vapor deposition apparatus, the electrodes 37 and 39 for generating plasma are
introduced into the chamber to cause contamination of the deposited film.
Further, since the heater 4 o is introduced into the chamber, it is difficult to heat the substrate 49
to a high temperature, for example, about 1 ooo ? ? C, from the viewpoint of corrosion of the
heater 4 o itself, heat resistance, and cost. The present invention solves such conventional
drawbacks. JP 58-1 (lOG 73 (2)) is a conductive and infrared light on the surface of a perger
made of chemical or physical vapor deposited infrared transparent material. An electrode for
generating a high frequency plasma made of a permeable material is formed. According to this
configuration, since only one means for heating and means for storing energy of the vapor
deposition particles or gas are simultaneously provided, both means can be operated without
contaminating the vapor deposition film, and the structure is simple and easy to use. It has the
advantage that a deposition apparatus can be provided. Examples of the vapor deposition
apparatus of the present invention will be described below. FIG. 2 is an external appearance
block diagram which shows one Example of the vapor deposition apparatus of this invention, FIG.
3 is the sectional view on the AB line | wire. Here, a vapor deposition apparatus compatible with
a chemical vapor deposition method (CVD method) is shown. In FIG. 2 and FIG. 3, 1.2 is a
reaction gas cylinder. The type of reaction gas may be further increased depending on what is
deposited 33 is a gas flow control device and a mixing device. Reference numeral 4 is a mixed
gas inlet, 6 is a top lid, 6 is a square IJ tongue, and 7 is a perger made of an infrared transmitting
material. Here, a transparent quartz glass tube is mainly used. 8 is a 7-deposited substrate, 9 is a
sample stand, 10 is a lower lid, and 11 is. A ring 12 is an infrared transparent and
simultaneously conductive high frequency plasma generating electrode provided on the outer
surface of the above-mentioned perger 7. As a material meeting this requirement, tin oxide,
indium oxide and the like are used. Reference numeral 13 denotes a heating device provided on
the outside of the high frequency plasma generating electrode 12, which generates a large
amount of infrared radiation and has a structure capable of efficiently irradiating the substrate.
Reference numeral 14 denotes a high frequency oscillation amplifier, which is electrically
connected to an electrode 12 made of an infrared transmitting material. It is a control device of
the 154 d heating device 13. 16 is an exhaust gas after reaction, a carrier gas outlet, 17 is an Oring, 8 is a vacuum pump, and 19 is a device for rotating the sample table 9 in order to deposit
uniformly on the substrate 8. Although the electrode 12 made of the above-mentioned infrared
transmitting material is divided into four, it can be divided into even numbers. Half of each
electrode is grounded, and the other half is connected to the output end of the high-frequency
digging and amplifying apparatus 14. Here, a high frequency of 13.56 MHz is used to fill the
electromagnetic wave in the perger 7 made of a quartz glass tube, the reaction gas sent into the
chamber is plasmatized, the chemical reaction of the gas is promoted, and the crystal growth
temperature is It can be lowered.
The heating device 13 is composed of eight infrared radiation units, or the number can be freely
changed. One infrared radiation unit is equipped with an electrothermal rod-shaped heater 21 for
infrared radiation. 22 shows the radiation direction of the infrared ray. A reflection plate 23
efficiently reflects infrared rays and heats the substrate 8 and is a parabolic mirror. FIG. 4 shows
the infrared spectrum of the heater 21 for infrared radiation. This figure shows the case where
the input power density is about 26 w / crA. If the input power is reduced to this heater, the peak
wavelength moves to the long wavelength side, and the light emission energy relatively
decreases. FIG. 5 shows an electrode 12. The infrared transmission spectrum of each of the
perger 7 is shown. a is a transmission spectrum of an electrode made of an infrared transmitting
material, b is a perger made of quartz glass, and C is a transmission spectrum of an electrode
made of a porous metal. An electrode r made of an infrared transmitting material is an indium
oxide film, which has a resistance value of about 10 ░ ? / crj and a thickness of about 500
persons. The perger made of quartz glass was measured at a thickness of about 511. The
electrode made of porous metal was measured with a metal mesh of 8 mesh. As apparent from
FIG. 6, even when the electrode porous metal plate for high frequency plasma generation is used,
it can not reach the infrared transmittance of the electrode made of the infrared transmitting
material. Next, the case where the speaker diaphragm is manufactured as a single boron film
which is a non-metallic material of high melting point using the vapor deposition apparatus as
described above will be specifically described. H2 gas and BCl3 gas are used as reaction gas.
Furthermore, an inert gas such as Ar gas may be used as a carrier gas for dilution, and the gas
flow rate control uses a mass flow meter to improve accuracy. The flow ratio of H2 gas to BCl3
gas is suitably H2: BC13 = (1 to 6): 1, but in this case the inside of the 3 quartz glass chamber
performed at 2: 1 is kept at about I Torr 1 to 1 ░ Torr is also possible). The substrate is a high
melting point metal foil such as Mo, W, Ta, etc. and a flat metal foil without hydrogen
embrittlement. The thickness of the foil is about 60?. The infrared transmitting electrode has a
thickness of about 500 A in In 2 O 3 and a conductivity of about 1000 Ad. This is divided into
four parts on the outer surface of the quartz glass tube. Two of them were connected to ground
and the other two to high frequency oscillators and amplifiers. The oscillation frequency is 13.56
MHz and the applied power is 400 w. The infrared generator was powered with 25 wAyf.
The sample rotator was rotated at 15 rpm. As a result, the substrate could be heated to a
maximum of 1100'C. The substrate temperature was measured by an optical thermometer and
maintained at about 900 ░ C. by a temperature controller, a reaction gas was introduced, and
plasma conversion was performed. About 1 Qo of boron on the substrate. It was deposited at a
rate of 8 / min. The obtained substrate with boron was removed by etching with acid to obtain a
boconvex single film. The thickness was about 20 ?, Young's modulus was 4 О 1012 dyne / cni,
and the density was 2, 37 / cr1 f, which showed good characteristics as a speaker moving plate.
FIG. 6 is an external configuration view showing another embodiment of the vapor deposition
apparatus of the present invention. Here, physical vapor deposition (PO2). 12 shows a deposition
apparatus compatible with the VD method). In FIG. 6, 61 is an infrared transmitting electrode, 52
is an infrared heating device, 63 is a high frequency generator / amplifier, 64 is a temperature
controller, 55 is a substrate, 66 is a sample table, 67 is a DC high voltage power supply, 58 is an
electron beam generating 59 is an evaporation source, 60 is a shutter, 61 is a vacuum pump, and
62 is a quartz glass perger. As described above, when the electrode 51 is provided on the outer
surface of the perger 62 from an infrared transmitting material, the evaporation particles can be
plasmatized in the same manner as chemical vapor deposition, and simultaneously heating can
be performed to a high temperature. Furthermore, it is also possible to selectively accelerate and
deposit the plasmatized particles by applying a high DC voltage between the substrate and the
evaporation source. In the above embodiment, the electrode made of the infrared ray
transmitting material for plasma generation is formed exposed on the outer peripheral surface of
the quartz glass Pell jar, but the infrared ray except for the terminal portion connected to the
high frequency oscillation amplifier Covering and sealing with a thin film having high
permeability, such as quartz glass, can prevent the electrode from being worn out. In addition, if
an electrode made of an infrared transmitting material is formed on the inside of a pel jar made
of quartz glass 0 and sealed from the inside with a thin film of quartz glass as well, the terminal
portion is taken out of the pel jar tube by a hermetic seal. An extra electromagnetic wave that has
been squeezed out in the thick part of the part can contribute to the improvement of the
efficiency. As described above, according to the present invention, since the electrode made of
the infrared transmitting material is used, there is an advantage that the heating device can be
heated without being brought into the deposition tank. This broadens the range of choices for the
heating method, and allows the substrate to be heated to a high temperature, and also enables
coating of the complex shaped object obtained by the electric heating method. In the case of
electric heating or when using a heating method using a heater that is not electrically shielded,
electromagnetic waves from the high frequency plasma generation electrode are absorbed by the
heater wire, the heating current is reduced, and the heating is substantially performed. Although
this may not be possible, such problems can also be solved.
Since the heating device is outside the chamber, it is possible to prevent the corrosion of the
heater by the corrosive gas, the adhesion of the deposition to the heater, and the contamination
of the deposited film by the heating device. In addition, since the plasma generating electrode
and the heating device can be arranged concentrically, the structure is simple and it has an
advantage of being able to be heated to a high temperature.
Brief description of the drawings
1 is a block diagram of a conventional vapor deposition apparatus, FIG. 2 is a block diagram of a
chemical vapor deposition apparatus showing one embodiment of the present invention, and FIG.
3 is a sectional view taken along line A-B in FIG. The figure is the infrared wavelength spectrum
of the infrared radiation heater, Fig. 5 is the infrared transmittance characteristic of the main
materials used for the electrodes and the pelger, and Fig. 6 is a physical vapor deposition
apparatus showing another embodiment of the present invention. FIG.
12.51 и и и и и и Electrodes made of infrared-transparent material, 13, 62 и и и и и и Infrared radiation
heater, 7, 62 и и и и и и и и Quartz glass tube (Pell jar), 8, 65 и и и иии Vapor deposited substrate, 37, 39 иии
и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и и. Name of agent Attorney
Nakao Toshio and others 1 person It Fig. 4 Fig. 2 Fig. 3 ? 4 Fig. 4 wavelength (7) Fig. 5
wavelength [voice
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